Unidirectional demixing of eutectoid materials

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CPC
C30B3/00

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...

Current Industry

C30B3/00Unidirectional demixing of eutectoid materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon material processing apparatus, silicon ingot production equ...
- Patent number 12,209,326
- Issue date Jan 28, 2025
- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.
- Fan Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing large GaAs and GaP infrared windows
- Patent number 12,203,191
- Issue date Jan 21, 2025
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Grant
Cleaning tools and methods for cleaning the pull cable of an ingot...
- Patent number 12,202,017
- Issue date Jan 21, 2025
- GlobalWafers Co., Ltd.
- Chin-Hung Ho
- B08 - CLEANING
Information Patent Grant
Preparation method for ultrahigh-conductivity multilayer single-cry...
- Patent number 12,203,193
- Issue date Jan 21, 2025
- Peking University
- Kaihui Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ingot puller apparatus that use a solid-phase dopant
- Patent number 12,195,872
- Issue date Jan 14, 2025
- GlobalWafers Co., Ltd.
- William L. Luter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabrication of PBSE nanostructures by employing chemical bath depos...
- Patent number 12,195,874
- Issue date Jan 14, 2025
- Illinois Tool Works Inc.
- Richard S. Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reflection mode dynode
- Patent number 12,198,915
- Issue date Jan 14, 2025
- ADAPTAS SOLUTIONS PTY LTD
- Toby Shanley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC crystals with an optimal orientation of lattice planes for fiss...
- Patent number 12,195,878
- Issue date Jan 14, 2025
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Extreme large grain (1 mm) lateral growth of Cd(Se,Te) alloy thin f...
- Patent number 12,195,879
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- David Scott Albin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods and systems for controlling crystal growth
- Patent number 12,188,146
- Issue date Jan 7, 2025
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- G05 - CONTROLLING REGULATING
Information Patent Grant
Single-crystal pulling apparatus with saddle-shaped superconducting...
- Patent number 12,188,153
- Issue date Jan 7, 2025
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for treating water contaminated with polycyclic organics
- Patent number 12,180,087
- Issue date Dec 31, 2024
- Imam Abdulrahman Bin Faisal University
- Hanan Hussein Amin Mohamed
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Raw material supply unit, and apparatus comprising same for growing...
- Patent number 12,173,426
- Issue date Dec 24, 2024
- SK SILTRON CO. LTD.
- Young Jung Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Controlled surface chemistry for polytypic and microstructural sele...
- Patent number 12,173,428
- Issue date Dec 24, 2024
- Mainstream Engineering Corporation
- Jesse A. Johnson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon ingot single crystal
- Patent number 12,163,247
- Issue date Dec 10, 2024
- GlobalWafers Co., Ltd.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,159,781
- Issue date Dec 3, 2024
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Inhibiting dripped granular dopant from adhering to a growing silic...
- Patent number 12,157,953
- Issue date Dec 3, 2024
- Sumco Corporation
- Norihito Fukatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for simultaneously manufacturing more than one single crysta...
- Patent number 12,157,955
- Issue date Dec 3, 2024
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing wafers with modification lines of defined orie...
- Patent number 12,159,805
- Issue date Dec 3, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon carbide composite wafer and manufacturing method thereof
- Patent number 12,159,855
- Issue date Dec 3, 2024
- HONG CHUANG APPLIED TECHNOLOGY CO., LTD
- Yan-Kai Zeng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of nonlinear optical crystals
- Patent number 12,152,316
- Issue date Nov 26, 2024
- KLA Corporation
- Yung-Ho Alex Chuang
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of single-crystal silicon substrate
- Patent number 12,129,570
- Issue date Oct 29, 2024
- Disco Corporation
- Hayato Iga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Biopolymer concentration method, crystallization method, and nanost...
- Patent number 12,123,106
- Issue date Oct 22, 2024
- EEJA LTD.
- Tetsuo Okutsu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CRYSTAL GROWTH METHOD, AND CRYSTAL GROWTH DEVICE
- Publication number 20250043458
- Publication date Feb 6, 2025
- BEIJING HAMAMATSU PHOTON TECHNIQUES INC.
- Yongfei HAN
- G01 - MEASURING TESTING
Information Patent Application
MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...
- Publication number 20250043460
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046656
- Publication date Feb 6, 2025
- Socpra Sciences et Genie s.e.c.
- Thierno Mamoudou DIALLO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON BAR RINSING DEVICE
- Publication number 20250033092
- Publication date Jan 30, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Yan SHI
- B08 - CLEANING
Information Patent Application
DEVICES AND METHODS FOR CLEANING A FINISHED MONOCRYSTALLINE SQUARE...
- Publication number 20250033093
- Publication date Jan 30, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Yiqiang GONG
- B08 - CLEANING
Information Patent Application
METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...
- Publication number 20250034751
- Publication date Jan 30, 2025
- TOHOKU UNIVERSITY
- Hiroyuki FUKUYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Crystal Growth Device and Quality Control Method
- Publication number 20250027227
- Publication date Jan 23, 2025
- Winsheng Material Technology Co., Ltd.
- Yun-Fu Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTA...
- Publication number 20250022747
- Publication date Jan 16, 2025
- SOITEC
- Fabrice Letertre
- C30 - CRYSTAL GROWTH
Information Patent Application
MAGNET FOR SINGLE CRYSTAL PRODUCTION APPARATUS, SINGLE CRYSTAL PROD...
- Publication number 20250019863
- Publication date Jan 16, 2025
- SUMCO CORPORATION
- Atsuhiro YAMADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND AL...
- Publication number 20250011971
- Publication date Jan 9, 2025
- Tokuyama Corporation
- Masayuki FUKUDA
- B24 - GRINDING POLISHING
Information Patent Application
PROCESS OF AUTOMATIC CRYSTAL BAR COLLECTION
- Publication number 20250011972
- Publication date Jan 9, 2025
- TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
- Jinxin YAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE
- Publication number 20250002354
- Publication date Jan 2, 2025
- NanoXplore Inc.
- Marie BOZALINA
- B82 - NANO-TECHNOLOGY
Information Patent Application
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURI...
- Publication number 20240426023
- Publication date Dec 26, 2024
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...
- Publication number 20240426024
- Publication date Dec 26, 2024
- Sumitomo Electric Industries, Ltd.
- Kazuki NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD FOR GROWTH OF QUASI-PHASE MATCHED STRONTIUM TETRA...
- Publication number 20240426021
- Publication date Dec 26, 2024
- KLA Corporation
- Kelly Mauser
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...
- Publication number 20240417885
- Publication date Dec 19, 2024
- Pacific Innovations Pte. Ltd.
- Faouzi Zerrouk
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240410082
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Ai Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Application
VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD
- Publication number 20240410083
- Publication date Dec 12, 2024
- KYOTO UNIVERSITY
- Norikazu MIZUOCHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401229
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
ELECTRO-FORMED METAL FOILS
- Publication number 20240407270
- Publication date Dec 5, 2024
- American Superconductor Corporation
- Cornelis Leo Hans Thieme
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
WATER TREATMENT AND PURIFICATION METHOD
- Publication number 20240400407
- Publication date Dec 5, 2024
- Imam Abdulrahman Bin Faisal University
- Hanan Hussein Amin MOHAMED
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...
- Publication number 20240392476
- Publication date Nov 28, 2024
- SOITEC
- Ionut Radu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURE OF A WATCH CRYSTAL
- Publication number 20240392473
- Publication date Nov 28, 2024
- Corey Albert Morrow
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Bulk SiC Single Crystal with Improved Qualit...
- Publication number 20240392471
- Publication date Nov 28, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
LASER BEAM ASTIGMATISM EVALUATING METHOD
- Publication number 20240385431
- Publication date Nov 21, 2024
- Disco Corporation
- Atsushi MAEDA
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20240384436
- Publication date Nov 21, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH

Unidirectional demixing of eutectoid materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Engineered substrate structures for power and RF applications

Silicon material processing apparatus, silicon ingot production equ...

Method of producing large GaAs and GaP infrared windows

Cleaning tools and methods for cleaning the pull cable of an ingot...

Preparation method for ultrahigh-conductivity multilayer single-cry...

Ingot puller apparatus that use a solid-phase dopant

Method for producing a composite structure comprising a thin layer...

Fabrication of PBSE nanostructures by employing chemical bath depos...

Reflection mode dynode

SiC crystals with an optimal orientation of lattice planes for fiss...

Extreme large grain (1 mm) lateral growth of Cd(Se,Te) alloy thin f...

Methods and systems for controlling crystal growth

Single-crystal pulling apparatus with saddle-shaped superconducting...

Method for treating water contaminated with polycyclic organics

Raw material supply unit, and apparatus comprising same for growing...

Controlled surface chemistry for polytypic and microstructural sele...

Method for producing silicon ingot single crystal

Method for manufacturing a composite structure comprising a thin la...

Inhibiting dripped granular dopant from adhering to a growing silic...

Method for simultaneously manufacturing more than one single crysta...

Method for producing wafers with modification lines of defined orie...

Silicon carbide composite wafer and manufacturing method thereof

Methods for determining suitability of silicon substrates for epitaxy

Passivation of nonlinear optical crystals

SiC wafer and manufacturing method for SiC wafer

Joined body, laser oscillator, laser amplifier, and joined body man...

Silicon wafer and manufacturing method of the same

Manufacturing method of single-crystal silicon substrate

Biopolymer concentration method, crystallization method, and nanost...

Group III nitride single crystal substrate and method for productio...

Patents Applicationslast 30 patents

CRYSTAL GROWTH METHOD, AND CRYSTAL GROWTH DEVICE

MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SILICON BAR RINSING DEVICE

DEVICES AND METHODS FOR CLEANING A FINISHED MONOCRYSTALLINE SQUARE...

METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...

Silicon Carbide Crystal Growth Device and Quality Control Method

PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTA...

MAGNET FOR SINGLE CRYSTAL PRODUCTION APPARATUS, SINGLE CRYSTAL PROD...

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND AL...

PROCESS OF AUTOMATIC CRYSTAL BAR COLLECTION

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURI...

GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

SYSTEM AND METHOD FOR GROWTH OF QUASI-PHASE MATCHED STRONTIUM TETRA...

Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

CVD SINGLE CRYSTAL DIAMOND

SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR

VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

ELECTRO-FORMED METAL FOILS

WATER TREATMENT AND PURIFICATION METHOD

METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...

METHOD OF MANUFACTURE OF A WATCH CRYSTAL

Method for Producing a Bulk SiC Single Crystal with Improved Qualit...

LASER BEAM ASTIGMATISM EVALUATING METHOD

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...