using elements in which the storage effect is based on magnetic spin effect

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C11/16using elements in which the storage effect is based on magnetic spin effect

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power supply generator assist
- Patent number 11,978,492
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-An Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Back pattern counter measure for solid state drives
- Patent number 11,978,490
- Issue date May 7, 2024
- Western Digital Technologies, Inc.
- Ming Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
Mixed current-forced read scheme for MRAM array with selector
- Patent number 11,978,491
- Issue date May 7, 2024
- SANDISK TECHNOLOGIES LLC
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive random access memory for physically unclonable fun...
- Patent number 11,980,026
- Issue date May 7, 2024
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with magnetic tunnel junctions
- Patent number 11,980,040
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Function switchable magnetic random access memory and method for ma...
- Patent number 11,972,786
- Issue date Apr 30, 2024
- Institute of Semiconductors, Chinese Academy of Sciences
- Kaiyou Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element, semiconductor device, magnetic recording array, an...
- Patent number 11,974,507
- Issue date Apr 30, 2024
- TDK Corporation
- Atsushi Tsumita
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point array refresh scheme
- Patent number 11,972,787
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
MRAM structure with enhanced magnetics using seed engineering
- Patent number 11,972,785
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 11,968,844
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,968,906
- Issue date Apr 23, 2024
- United Microelectronics Corp.
- Jin-Yan Chiou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device
- Patent number 11,968,908
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tai-Yen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function cell and operation method of same
- Patent number 11,967,351
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Che Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a magnetoresistance amplif...
- Patent number 11,968,907
- Issue date Apr 23, 2024
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for current controlled nanowire memory device
- Patent number 11,967,350
- Issue date Apr 23, 2024
- Ceremorphic,inc.
- Akshaykumar Salimath
- G11 - INFORMATION STORAGE
Information Patent Grant
Sputter deposited crystalline ordered topological insulator/ferroma...
- Patent number 11,968,905
- Issue date Apr 23, 2024
- Northeastern University
- Nian-Xiang Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Processing core and MRAM memory unit integrated on a single chip
- Patent number 11,968,843
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Te Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of manufacturing a magnetoresistive random access memory (MRAM)
- Patent number 11,968,909
- Issue date Apr 23, 2024
- Godo Kaisha IP Bridge 1
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Switching device and resistance variable device
- Patent number 11,963,459
- Issue date Apr 16, 2024
- Kioxia Corporation
- Hiroshi Takehira
- G11 - INFORMATION STORAGE
Information Patent Grant
Encoder
- Patent number 11,962,332
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM...
- Patent number 11,961,544
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM reference current
- Patent number 11,961,546
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device, method for manufacturing magnetic...
- Patent number 11,963,458
- Issue date Apr 16, 2024
- TOHOKU UNIVERSITY
- Koichi Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistive random access memory magnetic tunnel junction and...
- Patent number 11,963,462
- Issue date Apr 16, 2024
- Honeywell International Inc.
- Romney R. Katti
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell and MRAM
- Patent number 11,963,463
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM memory array yield improvement
- Patent number 11,963,456
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Dimitri Houssameddine
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier circuit with temperature compensation
- Patent number 11,955,154
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Cheng-Tung Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,957,064
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-element gain memory bit-cell having stacked and folded planar...
- Patent number 11,955,153
- Issue date Apr 9, 2024
- Kepler Computing Inc.
- Rajeev Kumar Dokania
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
HIGH PERFORMANCE PROCESSOR FOR LOW-WAY AND HIGH-LATENCY MEMORY INST...
- Publication number 20240143457
- Publication date May 2, 2024
- NeuroBlade Ltd.
- Elad SITY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240147867
- Publication date May 2, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREO...
- Publication number 20240147868
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Soichiro MIZUSAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20240145001
- Publication date May 2, 2024
- KIOXIA Corporation
- Masayoshi IWAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH OCTAGON PROFILE
- Publication number 20240135978
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20240130247
- Publication date Apr 18, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G01 - MEASURING TESTING
Information Patent Application
LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240130141
- Publication date Apr 18, 2024
- UNITED MICROELECTRONICS CORP.
- Ya-Huei Tsai
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...
- Publication number 20240119983
- Publication date Apr 11, 2024
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
PARTITIONED MEMORY ARCHITECTURE WITH SINGLE RESISTOR OR DUAL RESIST...
- Publication number 20240120001
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN LOGIC DEVICE BASED ON MAGNETIC TUNNEL JUNCTION AND ELECTRONIC...
- Publication number 20240120923
- Publication date Apr 11, 2024
- Institute of Physics, Chinese Academy of Sciences
- Xiufeng HAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND METHODS FOR HIGH OXIDATION TIME TO SUPPRESS BIT ERROR RATE
- Publication number 20240114802
- Publication date Apr 4, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun SUN
- G11 - INFORMATION STORAGE
Information Patent Application
MOVABLE MAGNETIC PARTICLE MEMORY DEVICE
- Publication number 20240112711
- Publication date Apr 4, 2024
- SEAGATE TECHNOLOGY LLC
- Riyan Alex Mendonsa
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
- Publication number 20240112712
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR SCAN CHAIN INTERFACE FOR NON-VOLATILE STORA...
- Publication number 20240112713
- Publication date Apr 4, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY HAVING A RING OF MAGNETIC TUN...
- Publication number 20240107895
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chung-Liang Chu
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED FET WITH THREE-TERMINAL SOT MRAM
- Publication number 20240105244
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...
- Publication number 20240107892
- Publication date Mar 28, 2024
- Apple Inc.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
Stochastic Memristive Devices Based on Arrays of Magnetic Tunnel Ju...
- Publication number 20240105245
- Publication date Mar 28, 2024
- Northwestern University
- Pedram Khalili Amiri
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME
- Publication number 20240099149
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Feng Yin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20240099158
- Publication date Mar 21, 2024
- KIOXIA Corporation
- Kenichi YOSHINO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20240099152
- Publication date Mar 21, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20240099155
- Publication date Mar 21, 2024
- KIOXIA Corporation
- Masahiro KOIKE
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
- Publication number 20240099148
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240099154
- Publication date Mar 21, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING
- Publication number 20240087630
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240087786
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-RESISTANCE-STATE SPINTRONIC DEVICE, READ-WRITE CIRCUIT, AND I...
- Publication number 20240087628
- Publication date Mar 14, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Guozhong XING
- G11 - INFORMATION STORAGE
Information Patent Application
FORMING METHOD OF MEMORY DEVICE
- Publication number 20240087629
- Publication date Mar 14, 2024
- KIOXIA Corporation
- Naoki MATSUSHITA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20240090340
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Che Ku
- H01 - BASIC ELECTRIC ELEMENTS

using elements in which the storage effect is based on magnetic spin effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power supply generator assist

Back pattern counter measure for solid state drives

Mixed current-forced read scheme for MRAM array with selector

Magnetoresistive random access memory for physically unclonable fun...

Semiconductor device with magnetic tunnel junctions

Function switchable magnetic random access memory and method for ma...

Storage element, semiconductor device, magnetic recording array, an...

Cross-point array refresh scheme

MRAM structure with enhanced magnetics using seed engineering

Memory device

Semiconductor device and method for fabricating the same

Magnetic tunnel junction device

Physically unclonable function cell and operation method of same

Magnetoresistive memory device including a magnetoresistance amplif...

System and method for current controlled nanowire memory device

Sputter deposited crystalline ordered topological insulator/ferroma...

Processing core and MRAM memory unit integrated on a single chip

Method of manufacturing a magnetoresistive random access memory (MRAM)

Switching device and resistance variable device

Encoder

Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM...

Circuit design and layout with high embedded memory density

MRAM reference current

Magnetic tunnel junction device, method for manufacturing magnetic...

Magneto-resistive random access memory magnetic tunnel junction and...

MRAM cell and MRAM

MRAM memory array yield improvement

Sense amplifier circuit with temperature compensation

Semiconductor device and method for fabricating the same

Multi-element gain memory bit-cell having stacked and folded planar...

Patents Applicationslast 30 patents

HIGH PERFORMANCE PROCESSOR FOR LOW-WAY AND HIGH-LATENCY MEMORY INST...

MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS

SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREO...

MEMORY DEVICE

MRAM DEVICE WITH OCTAGON PROFILE

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

LAYOUT PATTERN FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY

MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...

PARTITIONED MEMORY ARCHITECTURE WITH SINGLE RESISTOR OR DUAL RESIST...

SPIN LOGIC DEVICE BASED ON MAGNETIC TUNNEL JUNCTION AND ELECTRONIC...

SYSTEMS AND METHODS FOR HIGH OXIDATION TIME TO SUPPRESS BIT ERROR RATE

MOVABLE MAGNETIC PARTICLE MEMORY DEVICE

SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL

SYSTEMS AND METHODS FOR SCAN CHAIN INTERFACE FOR NON-VOLATILE STORA...

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

MAGNETORESISTIVE RANDOM ACCESS MEMORY HAVING A RING OF MAGNETIC TUN...

STACKED FET WITH THREE-TERMINAL SOT MRAM

MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...

Stochastic Memristive Devices Based on Arrays of Magnetic Tunnel Ju...

MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME

MAGNETIC MEMORY DEVICE

MAGNETO RESISTIVE ELEMENT

MAGNETIC MEMORY

MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER

MAGNETORESISTIVE RANDOM ACCESS MEMORY

MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

MULTI-RESISTANCE-STATE SPINTRONIC DEVICE, READ-WRITE CIRCUIT, AND I...

FORMING METHOD OF MEMORY DEVICE

MEMORY CELL WITH TOP ELECTRODE VIA