using inside spacers, permanent or not

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H01L29/66553

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66553using inside spacers, permanent or not

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices having fins and multiple isolation regions
- Patent number 12,300,696
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Sheng Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for preventing unintentional merging of epitaxi...
- Patent number 12,300,698
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate device with air gap spacer and backside rail contact and...
- Patent number 12,300,731
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap in inner spacers and methods of fabricating the same in fie...
- Patent number 12,300,735
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device with air gap spacer and fabrication methods thereof
- Patent number 12,300,720
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with improved strain properties
- Patent number 12,300,749
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with counter-doped nanostructures
- Patent number 12,300,718
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,300,750
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,300,728
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based complementary metal-oxide-semiconductor devices wi...
- Patent number 12,294,030
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of channel layers and metho...
- Patent number 12,294,005
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Woo Cheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure for semiconductor device and method for forming th...
- Patent number 12,288,722
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 12,288,810
- Issue date Apr 29, 2025
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,288,814
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,283,631
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer for semiconductor device
- Patent number 12,283,618
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming spacers for semiconductor devices including back...
- Patent number 12,283,521
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with epitaxi...
- Patent number 12,283,610
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Tai Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for parameter drift correction for inverter for...
- Patent number 12,279,402
- Issue date Apr 15, 2025
- BorgWarner US Technologies LLC
- Seyed R. Zarabadi
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Stacked FETS with non-shared work function metals
- Patent number 12,278,237
- Issue date Apr 15, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain for backside source contact
- Patent number 12,272,729
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanosheet transistors and methods o...
- Patent number 12,266,712
- Issue date Apr 1, 2025
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with dielectric spacers and method of fabrication therefor
- Patent number 12,266,713
- Issue date Apr 1, 2025
- NXP USA, INC.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 12,261,204
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,205
- Issue date Mar 25, 2025
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor structure
- Patent number 12,261,214
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with gate stack and method for formi...
- Patent number 12,261,203
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-end gate structures and method forming same
- Patent number 12,261,213
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner filler layer for multi-patterned metal gate for nanostructure...
- Patent number 12,255,100
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structures for gate-all-around field effect transistors
- Patent number 12,255,249
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063777
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BIT LINE
- Publication number 20250063725
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Jongmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR PHASE SWITCH TIMING CONTROLLER FOR INVERTER...
- Publication number 20250056773
- Publication date Feb 13, 2025
- BorgWarner US Technologies LLC
- Jack Lavern Glenn
- B60 - VEHICLES IN GENERAL
Information Patent Application
SELF-ALIGNED BACKSIDE VIA WITH BURIED SEMICONDUCTOR STRUCTURE AND T...
- Publication number 20250048710
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lo-Heng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250048694
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hsien YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION
- Publication number 20250046617
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250040167
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...
- Publication number 20250040201
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STRUCTURES WITH CORNER SPACER
- Publication number 20250031401
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Bartlomiej J. PAWLAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...
- Publication number 20250031436
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS
- Publication number 20250022877
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...
- Publication number 20250022945
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250022716
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Eun Jung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006811
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250006817
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250006827
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...
- Publication number 20250006829
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE
- Publication number 20250006822
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Na Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE-ALL-AROUND DEVICE
- Publication number 20240429318
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS

using inside spacers, permanent or not

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices having fins and multiple isolation regions

Isolation structure for preventing unintentional merging of epitaxi...

Multigate device with air gap spacer and backside rail contact and...

Air gap in inner spacers and methods of fabricating the same in fie...

Multi-gate device with air gap spacer and fabrication methods thereof

Source/drain features with improved strain properties

Semiconductor devices with counter-doped nanostructures

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor devices

Nano-sheet-based complementary metal-oxide-semiconductor devices wi...

Semiconductor device having a plurality of channel layers and metho...

Spacer structure for semiconductor device and method for forming th...

Backside contact structures and fabrication for metal on both sides...

Semiconductor device and method of manufacture

Method of manufacturing a semiconductor device and a semiconductor...

Inner spacer for semiconductor device

Methods of forming spacers for semiconductor devices including back...

Structure and formation method of semiconductor device with epitaxi...

Systems and methods for parameter drift correction for inverter for...

Stacked FETS with non-shared work function metals

Asymmetric source/drain for backside source contact

Transition metal dichalcogenide nanosheet transistors and methods o...

Transistor with dielectric spacers and method of fabrication therefor

Semiconductor devices and methods for fabricating the same

Semiconductor device

Multi-gate transistor structure

Semiconductor device structure with gate stack and method for formi...

Fin-end gate structures and method forming same

Inner filler layer for multi-patterned metal gate for nanostructure...

Inner spacer structures for gate-all-around field effect transistors

Patents Applicationslast 30 patents

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SPECIALIZED TRANSISTORS

SEMICONDUCTOR DEVICE INCLUDING BIT LINE

SEMICONDUCTOR DEVICE

SYSTEMS AND METHODS FOR PHASE SWITCH TIMING CONTROLLER FOR INVERTER...

SELF-ALIGNED BACKSIDE VIA WITH BURIED SEMICONDUCTOR STRUCTURE AND T...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

NANOSHEET STRUCTURES WITH CORNER SPACER

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS

Volume-Less Dipole Incorporation into CFET Having Common Gate

SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

VERTICAL GATE-ALL-AROUND DEVICE