using inside spacers, permanent or not

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H01L29/66553

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66553using inside spacers, permanent or not

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Asymmetric source/drain for backside source contact
- Patent number 12,272,729
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanosheet transistors and methods o...
- Patent number 12,266,712
- Issue date Apr 1, 2025
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with dielectric spacers and method of fabrication therefor
- Patent number 12,266,713
- Issue date Apr 1, 2025
- NXP USA, INC.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 12,261,204
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,205
- Issue date Mar 25, 2025
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor structure
- Patent number 12,261,214
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with gate stack and method for formi...
- Patent number 12,261,203
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-end gate structures and method forming same
- Patent number 12,261,213
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner filler layer for multi-patterned metal gate for nanostructure...
- Patent number 12,255,100
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structures for gate-all-around field effect transistors
- Patent number 12,255,249
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,255,230
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation of nanostructures for nano-FET
- Patent number 12,255,101
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multiple inner spacers with differen...
- Patent number 12,249,639
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxial region
- Patent number 12,249,505
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning gate lengths in multi-gate field effect transistors
- Patent number 12,249,636
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having spacer between contract patterns
- Patent number 12,249,648
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Hyun-Seung Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,243,780
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature for multigate device performance and method of...
- Patent number 12,243,912
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a static random-access memory (SRAM) cell with fi...
- Patent number 12,243,874
- Issue date Mar 4, 2025
- Samsung Electronics Co., Ltd.
- Kyungin Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain recess formation with metal-comprising maski...
- Patent number 12,243,783
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming source/drain features
- Patent number 12,237,232
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-FET transistor with alternating nanostructures and method of f...
- Patent number 12,237,399
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-En Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with improved strain properties
- Patent number 12,237,414
- Issue date Feb 25, 2025
- Taiwan Semicondcutor Manufacturing Co., Ltd.
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,237,224
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co. LTD
- Wei-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire stack GAA device with inner spacer and methods for produci...
- Patent number 12,237,425
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 12,237,415
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chi-Hsuan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional device formation using early removal of sacrifici...
- Patent number 12,230,691
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner spacer on gate-all-around structure and methods...
- Patent number 12,230,692
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063777
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BIT LINE
- Publication number 20250063725
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Jongmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR PHASE SWITCH TIMING CONTROLLER FOR INVERTER...
- Publication number 20250056773
- Publication date Feb 13, 2025
- BorgWarner US Technologies LLC
- Jack Lavern Glenn
- B60 - VEHICLES IN GENERAL
Information Patent Application
SELF-ALIGNED BACKSIDE VIA WITH BURIED SEMICONDUCTOR STRUCTURE AND T...
- Publication number 20250048710
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lo-Heng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250048694
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hsien YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION
- Publication number 20250046617
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250040167
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...
- Publication number 20250040201
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STRUCTURES WITH CORNER SPACER
- Publication number 20250031401
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Bartlomiej J. PAWLAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...
- Publication number 20250031436
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS
- Publication number 20250022877
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...
- Publication number 20250022945
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250022716
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Eun Jung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006811
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250006817
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250006827
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...
- Publication number 20250006829
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE
- Publication number 20250006822
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Na Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE-ALL-AROUND DEVICE
- Publication number 20240429318
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS

using inside spacers, permanent or not

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Asymmetric source/drain for backside source contact

Transition metal dichalcogenide nanosheet transistors and methods o...

Transistor with dielectric spacers and method of fabrication therefor

Semiconductor devices and methods for fabricating the same

Semiconductor device

Multi-gate transistor structure

Semiconductor device structure with gate stack and method for formi...

Fin-end gate structures and method forming same

Inner filler layer for multi-patterned metal gate for nanostructure...

Inner spacer structures for gate-all-around field effect transistors

Semiconductor structure and method for forming the same

Methods of forming of inner spacer structure using semiconductor ma...

Ion implantation of nanostructures for nano-FET

Semiconductor device including multiple inner spacers with differen...

Semiconductor device including epitaxial region

Tuning gate lengths in multi-gate field effect transistors

Semiconductor device having spacer between contract patterns

Semiconductor device structure and method for forming the same

Source/drain feature for multigate device performance and method of...

Method of forming a static random-access memory (SRAM) cell with fi...

Epitaxial source/drain recess formation with metal-comprising maski...

Methods for forming source/drain features

Nano-FET transistor with alternating nanostructures and method of f...

Source/drain features with improved strain properties

Semiconductor device and method

Nanowire stack GAA device with inner spacer and methods for produci...

Method for fabricating semiconductor device

Three dimensional device formation using early removal of sacrifici...

Self-aligned inner spacer on gate-all-around structure and methods...

Stacked transistors with different channel widths

Patents Applicationslast 30 patents

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE INCLUDING BIT LINE

SPECIALIZED TRANSISTORS

SEMICONDUCTOR DEVICE

SYSTEMS AND METHODS FOR PHASE SWITCH TIMING CONTROLLER FOR INVERTER...

SELF-ALIGNED BACKSIDE VIA WITH BURIED SEMICONDUCTOR STRUCTURE AND T...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

NANOSHEET STRUCTURES WITH CORNER SPACER

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS

Volume-Less Dipole Incorporation into CFET Having Common Gate

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

VERTICAL GATE-ALL-AROUND DEVICE