using inside spacers, permanent or not

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CPC
H01L29/66553

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66553using inside spacers, permanent or not

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure
- Patent number 12,218,227
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain silicide for multigate device performance and method o...
- Patent number 12,218,214
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure for semiconductor device
- Patent number 12,218,219
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for integrated gate driver for inverter for ele...
- Patent number 12,214,677
- Issue date Feb 4, 2025
- BorgWarner US Technologies LLC
- Mark Wendell Gose
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,211,919
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,211,942
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Soojin Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded backside memory on a field effect transistor
- Patent number 12,213,323
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channel pattern formed of stacked semicon...
- Patent number 12,211,941
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Donghyuk Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for forming metal gate electrodes for transistors
- Patent number 12,205,819
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing K values of dielectric films through anneal
- Patent number 12,206,012
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate isolation layer
- Patent number 12,199,096
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Seung Seok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for non-overlap enforcement for inverter for el...
- Patent number 12,194,870
- Issue date Jan 14, 2025
- Borg Warner US Technologies LLC
- Jack Lavern Glenn
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device with tunable channel layer usage and methods o...
- Patent number 12,191,370
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate semiconductor device with inner spacer and fabrication m...
- Patent number 12,191,379
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with reduced source/drain contact resist...
- Patent number 12,191,151
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Ge isolated epitaxial layer growth over nano-sheet architecture...
- Patent number 12,191,393
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field-effect transistors
- Patent number 12,183,740
- Issue date Dec 31, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 12,183,806
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for single channel fault encoding for inverter...
- Patent number 12,179,610
- Issue date Dec 31, 2024
- Borg Warner US Technologies LLC
- Marc R. Engelhardt
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device and methods of formation
- Patent number 12,183,640
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing parasitic capacitance for gate-all-around device by formin...
- Patent number 12,183,808
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power rail structure and methods of forming same
- Patent number 12,183,678
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control of channel structures for semiconductor devices
- Patent number 12,183,797
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,170,314
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED BACKSIDE VIA WITH BURIED SEMICONDUCTOR STRUCTURE AND T...
- Publication number 20250048710
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lo-Heng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250048694
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hsien YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION
- Publication number 20250046617
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250040167
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...
- Publication number 20250040201
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STRUCTURES WITH CORNER SPACER
- Publication number 20250031401
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Bartlomiej J. PAWLAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...
- Publication number 20250031436
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS
- Publication number 20250022877
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...
- Publication number 20250022945
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250022716
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Eun Jung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006811
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250006817
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250006827
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...
- Publication number 20250006829
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE
- Publication number 20250006822
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Na Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE-ALL-AROUND DEVICE
- Publication number 20240429318
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VECTOR FRIENDLY INSTRUCTION FORMAT AND EXECUTION THEREOF
- Publication number 20240427600
- Publication date Dec 26, 2024
- Intel Corporation
- Robert C. VALENTINE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421207
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jiho YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240421212
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Woo Seok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...
- Publication number 20240413223
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240413231
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huang-Chao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240413230
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Mu-Chieh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION
- Publication number 20240413206
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Yong Jun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FORMATION THROUGH STIMULATION
- Publication number 20240413215
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Jen Lo
- H01 - BASIC ELECTRIC ELEMENTS

using inside spacers, permanent or not

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure

Source/drain silicide for multigate device performance and method o...

Spacer structure for semiconductor device

Systems and methods for integrated gate driver for inverter for ele...

Semiconductor devices and methods of manufacturing thereof

Semiconductor devices

Embedded backside memory on a field effect transistor

Integrated circuit devices having highly integrated NMOS and PMOS t...

Field effect transistors comprising a matrix of gate-all-around cha...

Semiconductor devices with threshold voltage modulation layer

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device with channel pattern formed of stacked semicon...

Method and device for forming metal gate electrodes for transistors

Reducing K values of dielectric films through anneal

Method of manufacturing a multi-gate device having a semiconductor...

Semiconductor device having gate isolation layer

Systems and methods for non-overlap enforcement for inverter for el...

Semiconductor device with tunable channel layer usage and methods o...

Multi-gate semiconductor device with inner spacer and fabrication m...

Gate-all-around transistor with reduced source/drain contact resist...

Low Ge isolated epitaxial layer growth over nano-sheet architecture...

Stacked field-effect transistors

Semiconductor devices and methods of fabricating the same

Systems and methods for single channel fault encoding for inverter...

Semiconductor device and methods of formation

Reducing parasitic capacitance for gate-all-around device by formin...

Backside power rail structure and methods of forming same

Profile control of channel structures for semiconductor devices

Strained semiconductor FET devices with epitaxial quality improvement

Semiconductor device and manufacturing method thereof

Patents Applicationslast 30 patents

SELF-ALIGNED BACKSIDE VIA WITH BURIED SEMICONDUCTOR STRUCTURE AND T...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDU...

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

NANOSHEET STRUCTURES WITH CORNER SPACER

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS

Volume-Less Dipole Incorporation into CFET Having Common Gate

SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...

METHOD FOR MANUFACTURING GATE-ALL-AROUND TFET DEVICE

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

VERTICAL GATE-ALL-AROUND DEVICE

VECTOR FRIENDLY INSTRUCTION FORMAT AND EXECUTION THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...

NANOSHEET TRANSISTOR

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION

INNER SPACER FORMATION THROUGH STIMULATION