using inside spacers, permanent or not

Industry

CPC
H01L29/66553

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66553using inside spacers, permanent or not

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method
- Patent number 12,148,810
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an integrated circuit with drain well having multi...
- Patent number 12,148,827
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zheng Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around structure and methods of forming the same
- Patent number 12,148,836
- Issue date Nov 19, 2024
- Parabellum Strategic Opportunities Fund LLC
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based devices having inner spacer structures or gate por...
- Patent number 12,148,812
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,148,671
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,659
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,655
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with implant alignment spacers
- Patent number 12,132,099
- Issue date Oct 29, 2024
- NXP USA, INC.
- Hernan Rueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,119
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Kihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 12,132,108
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for bidirectional message architecture for inve...
- Patent number 12,122,251
- Issue date Oct 22, 2024
- BorgWarner US Technologies LLC
- Jack Lavern Glenn
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Source/drain features of multi-gate devices
- Patent number 12,125,915
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure incorporating air gap
- Patent number 12,125,848
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers in transistors and methods forming same
- Patent number 12,125,897
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced trap defect and method of forming...
- Patent number 12,119,389
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,119,394
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer and method of forming same
- Patent number 12,107,149
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for integrated gate driver for inverter for ele...
- Patent number 12,103,406
- Issue date Oct 1, 2024
- DELPHI TECHNOLOGIES IP LIMITED
- Mark Wendell Gose
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device
- Patent number 12,107,172
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Seungmin Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method
- Patent number 12,100,748
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,094,944
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructures and method for manufacturing the same
- Patent number 12,094,950
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor having a wrap-around gate with bot...
- Patent number 12,094,949
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,862
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 12,087,587
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure with fins using a multil...
- Patent number 12,087,641
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,087,814
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet device architecture for cell-height scaling
- Patent number 12,087,772
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387275
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Structure For Semiconductor Device
- Publication number 20240387693
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN
- Publication number 20240387717
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- HYOHOON BYEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Devices with Varying Channel Layers
- Publication number 20240387743
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuan-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20240387625
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD
- Publication number 20240387677
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Fin Structures in Semiconductor Devices
- Publication number 20240387694
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE ARCHITECTURE FOR CELL-HEIGHT SCALING
- Publication number 20240387541
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacers for Semiconductor Devices Including Backside Power Rails
- Publication number 20240387249
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Structures For Semiconductor Devices
- Publication number 20240387726
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES
- Publication number 20240389310
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD
- Publication number 20240387540
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240387671
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387268
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD...
- Publication number 20240387545
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Ya LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE SEMICONDUCTOR DEVICE WITH INNER SPACER AND FABRICATION M...
- Publication number 20240387707
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Features
- Publication number 20240387739
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE
- Publication number 20240387738
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES
- Publication number 20240379809
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20240379810
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACER AND METHOD OF FORMING SAME
- Publication number 20240379820
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ENHANCED CARRIER MOBILITY
- Publication number 20240379850
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240379857
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Structure with Reduced Leakage Current
- Publication number 20240379859
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions and Methods of Forming Same
- Publication number 20240379454
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20240379456
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240379409
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Jaeho Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE/DRAIN FEATURES
- Publication number 20240379807
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR
- Publication number 20240381667
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Forming Source/Drain Features
- Publication number 20240379455
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS

using inside spacers, permanent or not

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method

Method of making an integrated circuit with drain well having multi...

Gate-all-around structure and methods of forming the same

Nano-sheet-based devices having inner spacer structures or gate por...

Semiconductor devices and methods of manufacturing thereof

Transistor gate structures and methods of forming the same

Semiconductor device

Transistor gate structures and methods of forming the same

LDMOS transistor with implant alignment spacers

Semiconductor devices

Dual gate structures for semiconductor devices

Systems and methods for bidirectional message architecture for inve...

Source/drain features of multi-gate devices

Semiconductor device structure incorporating air gap

Air spacers in transistors and methods forming same

Semiconductor device with reduced trap defect and method of forming...

Method of manufacturing a semiconductor device and a semiconductor...

Air spacer and method of forming same

Systems and methods for integrated gate driver for inverter for ele...

Semiconductor device

Gate structure and method

Transistor circuits including fringeless transistors and method of...

Nanostructures and method for manufacturing the same

Gate-all-around field effect transistors having end portions of nan...

Fin-type field effect transistor having a wrap-around gate with bot...

Semiconductor device

Gate structures in transistors and method of forming same

Method for forming semiconductor structure with fins using a multil...

Semiconductor devices and methods of manufacturing thereof

Nanosheet device architecture for cell-height scaling

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Spacer Structure For Semiconductor Device

SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN

Multigate Devices with Varying Channel Layers

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

GATE STRUCTURE AND METHOD

Isolated Fin Structures in Semiconductor Devices

NANOSHEET DEVICE ARCHITECTURE FOR CELL-HEIGHT SCALING

Spacers for Semiconductor Devices Including Backside Power Rails

Dual Gate Structures For Semiconductor Devices

SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES

FIELD EFFECT TRANSISTOR AND METHOD

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD...

MULTI-GATE SEMICONDUCTOR DEVICE WITH INNER SPACER AND FABRICATION M...

Epitaxial Features

SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE

TRANSISTOR GATE STRUCTURES

GATE STRUCTURE FOR SEMICONDUCTOR DEVICE

AIR SPACER AND METHOD OF FORMING SAME

SEMICONDUCTOR DEVICES WITH ENHANCED CARRIER MOBILITY

GATE-ALL-AROUND STRUCTURE AND METHODS OF FORMING THE SAME

Device Structure with Reduced Leakage Current

Source/Drain Regions and Methods of Forming Same

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

METAL SOURCE/DRAIN FEATURES

EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR

Methods For Forming Source/Drain Features