using multiple spacer layers

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CPC
H01L29/6656

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6656using multiple spacer layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with dielectric liners on gate refill metal
- Patent number 12,243,918
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Hsiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a gate with a tapering bottom portion and a ga...
- Patent number 12,243,748
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 12,243,922
- Issue date Mar 4, 2025
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical oxide-semiconductor transistor and method of manufacturing...
- Patent number 12,243,942
- Issue date Mar 4, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Wen-Yueh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,398
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chia-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having air spacer
- Patent number 12,238,920
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Jihee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a field effect transistor and a meth...
- Patent number 12,237,391
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Junggun You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 12,237,404
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 12,237,415
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chi-Hsuan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 12,237,325
- Issue date Feb 25, 2025
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods of forming the same
- Patent number 12,238,933
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 12,237,402
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 12,230,509
- Issue date Feb 18, 2025
- United Microelectronics Corp.
- Ming Thai Chai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including dummy gate dielectric layer and met...
- Patent number 12,230,545
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and manufacturing method of the same
- Patent number 12,230,709
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tung-Yang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,315
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device including multiple channel layers w...
- Patent number 12,224,357
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Jinyeong Joe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,224,335
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Ching-Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,218,227
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,218,222
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with etch stop layer for reducing RC...
- Patent number 12,218,241
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Fin at a S/D region and a semiconduct...
- Patent number 12,218,136
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device in narrow slots within trench
- Patent number 12,218,195
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,218,130
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices having gate spacers...
- Patent number 12,218,216
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate oxide layer
- Patent number 12,211,915
- Issue date Jan 28, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE
- Publication number 20250072059
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Ravi Pramod Kumar VEDULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250072077
- Publication date Feb 27, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Wei-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250072081
- Publication date Feb 27, 2025
- WINBOND ELECTRONICS CORP.
- Cheng-Hong WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072080
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072082
- Publication date Feb 27, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- I-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063727
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Minhee CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
- Publication number 20250063736
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063777
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20250063773
- Publication date Feb 20, 2025
- LX Semicon Co., Ltd.
- Jin Ok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063789
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20250056835
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250056868
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056862
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250048707
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Donghoon KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048727
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Changhun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20250048703
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS, FABRICATION METHOD THEREOF AND MEMORY SYSTEM
- Publication number 20250048705
- Publication date Feb 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xuelian YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250048706
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Jui WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040188
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Yang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BODY CONTACT IMPLANT HAVING IMPROVED SHAPE, AND MAN...
- Publication number 20250040204
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Giuseppe Pio PISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040214
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...
- Publication number 20250040165
- Publication date Jan 30, 2025
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Formation With Staggered Gate Patterning
- Publication number 20250040184
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040217
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS

using multiple spacer layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with dielectric liners on gate refill metal

FinFET device having a gate with a tapering bottom portion and a ga...

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Vertical oxide-semiconductor transistor and method of manufacturing...

Semiconductor device and method for fabricating the same

Semiconductor devices having air spacer

Semiconductor device including a field effect transistor and a meth...

Methods for increasing germanium concentration of surfaces of a sil...

Method for fabricating semiconductor device

Three-dimensional field effect device

Semiconductor structures and methods of forming the same

Methods of forming semiconductor devices

Method for fabricating semiconductor device

Semiconductor devices including dummy gate dielectric layer and met...

Stacked transistors with different channel widths

Transistor structure and manufacturing method of the same

Semiconductor device

Semiconductor transistor device including multiple channel layers w...

Semiconductor device and fabrication method thereof

Contact architecture for capacitance reduction and satisfactory con...

Semiconductor structure

Air gap formation between gate spacer and epitaxy structure

FinFET device and method of forming same

Semiconductor device structure with etch stop layer for reducing RC...

Semiconductor device having a Fin at a S/D region and a semiconduct...

Vertical semiconductor device in narrow slots within trench

Semiconductor structure cutting process and structures formed thereby

Method for manufacturing semiconductor devices having gate spacers...

Hybrid channel semiconductor device and method

Semiconductor device including gate oxide layer

Patents Applicationslast 30 patents

ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE AND POWER CONVERTER

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

CONTACT GATE ISOLATION

INTEGRATED CIRCUIT STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

SEMICONDUCTOR DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

SEMICONDUCTOR APPARATUS, FABRICATION METHOD THEREOF AND MEMORY SYSTEM

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE

TRANSISTOR WITH BODY CONTACT IMPLANT HAVING IMPROVED SHAPE, AND MAN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

Contact Formation With Staggered Gate Patterning

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...