using selective deposition of single crystal silicon

Industry

CPC
H01L21/76262

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76262using selective deposition of single crystal silicon

Industries

Patents Grantslast 30 patents

Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 11,830,742
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,600,577
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidized cavity structures within and under semiconductor devices
- Patent number 11,410,872
- Issue date Aug 9, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 11,380,542
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device substrate with high thermal conductivity and method of manuf...
- Patent number 11,361,969
- Issue date Jun 14, 2022
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide fin segments to prevent strained semiconductor fin...
- Patent number 10,957,694
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 10,811,255
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 10,790,142
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 10,770,288
- Issue date Sep 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanowire fabrication
- Patent number 10,727,051
- Issue date Jul 28, 2020
- ELPIS TECHNOLOGIES INC.
- Mattias Bengt Borg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating crystalline island on substrate
- Patent number 10,319,754
- Issue date Jun 11, 2019
- DIFTEK LASERS, INC.
- Douglas R. Dykaar
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor nanowire fabrication
- Patent number 10,153,158
- Issue date Dec 11, 2018
- International Business Machines Corporation
- Mattias Bengt Borg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a multiple layer epitaxial layer on a wafer
- Patent number 10,002,761
- Issue date Jun 19, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized region of isolated silicon over recessed dielectric layer
- Patent number 9,466,520
- Issue date Oct 11, 2016
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semi-conducting substrate located on an insulat...
- Patent number 9,356,094
- Issue date May 31, 2016
- STMicroelectronics (Crolles 2) SAS
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate and method for manufacturing same
- Patent number 9,287,351
- Issue date Mar 15, 2016
- Kyocera Corporation
- Masanobu Kitada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon-on-insulator article
- Patent number 9,142,448
- Issue date Sep 22, 2015
- The Silanna Group Pty Ltd
- Andrew John Brawley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple layer substrate
- Patent number 9,111,898
- Issue date Aug 18, 2015
- Taiwan Semiconductor Manufacturing Company Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 9,024,409
- Issue date May 5, 2015
- SK Hynix Inc.
- Tae O Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a base substrate for a semi-conductor on in...
- Patent number 8,765,571
- Issue date Jul 1, 2014
- Soitec
- Oleg Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semi-conducting substrate located on an insulat...
- Patent number 8,536,027
- Issue date Sep 17, 2013
- STMicroelectronics (Crolles 2) SAS
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage consistency and effective width in same-substrate...
- Patent number 7,892,939
- Issue date Feb 22, 2011
- Infineon Technologies AG
- Roland Hampp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an element isolating insulating film
- Patent number 7,772,671
- Issue date Aug 10, 2010
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 7,713,827
- Issue date May 11, 2010
- Hynix Semiconductor Inc.
- Yeong Eui Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming horizontal buried channels or cavities in wafers...
- Patent number 7,705,416
- Issue date Apr 27, 2010
- STMicroelectronics S.r.l.
- Gabriele Barlocchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin layer structure and method of forming the same
- Patent number 7,534,704
- Issue date May 19, 2009
- Samsung Electronics Co., Ltd.
- Jae-Kyu Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator structures and methods
- Patent number 7,452,757
- Issue date Nov 18, 2008
- ASM America, Inc.
- Christiaan J. Werkhoven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation-less approach to fabricating strained semiconductor on...
- Patent number 7,338,886
- Issue date Mar 4, 2008
- Chartered Semiconductor Manufacturing, Ltd.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic structure with a high germanium concentration silic...
- Patent number 7,180,147
- Issue date Feb 20, 2007
- Intel Corporation
- Mike Morse
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Optical system with a high germanium concentration silicon germaniu...
- Patent number 7,180,148
- Issue date Feb 20, 2007
- Intel Corporation
- Mike Morse
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
INERTIAL SENSOR, METHOD OF MANUFACTURING INERTIAL SENSOR, AND INERT...
- Publication number 20240003933
- Publication date Jan 4, 2024
- SEIKO EPSON CORPORATION
- Teruo Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE AND PRODUCTION METHOD THEREFOR
- Publication number 20230207307
- Publication date Jun 29, 2023
- Shin-Etsu Chemical Co., Ltd.
- Shoji AKIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20220328309
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chien CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20210043454
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20200402795
- Publication date Dec 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chien CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Substrate With High Thermal Conductivity And Method Of Manuf...
- Publication number 20200227263
- Publication date Jul 16, 2020
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDIZED CAVITY STRUCTURES WITHIN AND UNDER SEMICONDUCTOR DEVICES
- Publication number 20200176304
- Publication date Jun 4, 2020
- GLOBALFOUNDRIES INC.
- Siva P. ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20190164752
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Capping Processes and Structures Formed Thereby
- Publication number 20190164751
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chien CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NANOWIRE FABRICATION
- Publication number 20190109003
- Publication date Apr 11, 2019
- International Business Machines Corporation
- MATTIAS BENGT BORG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION OF SILICON-GERMANIUM-ON-INSULATOR STRUCTURES
- Publication number 20180005872
- Publication date Jan 4, 2018
- SunEdison Semiconductor Limited (UEN201334164H)
- Shawn George Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING CRYSTALLINE ISLAND ON SUBSTRATE
- Publication number 20170154903
- Publication date Jun 1, 2017
- DIFTEK LASERS, INC.
- Douglas R. DYKAAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED REGION OF ISOLATED SILICON OVER RECESSED DIELECTRIC LAYER
- Publication number 20150294901
- Publication date Oct 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON-ON-INSULATOR ARTICLE
- Publication number 20140312424
- Publication date Oct 23, 2014
- Andrew John Brawley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Layer Substrate
- Publication number 20140231964
- Publication date Aug 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE AND PROCESS FOR PRODUCING SAME
- Publication number 20140167230
- Publication date Jun 19, 2014
- KYOCERA CORPORATION
- Masanobu Kitada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20140141593
- Publication date May 22, 2014
- SK HYNIX INC.
- Tae O Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULAT...
- Publication number 20130264678
- Publication date Oct 10, 2013
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20120273918
- Publication date Nov 1, 2012
- Hynix Semiconductor Inc.
- Tae O. JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A BASE SUBSTRATE FOR A SEMI-CONDUCTOR ON IN...
- Publication number 20120244687
- Publication date Sep 27, 2012
- SOITEC
- Oleg Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULAT...
- Publication number 20100289123
- Publication date Nov 18, 2010
- ST Microelectronics (Crolles) 2 SAS
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS
- Publication number 20100221867
- Publication date Sep 2, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Threshold Voltage Consistency and Effective Width in Same-Substrate...
- Publication number 20090227086
- Publication date Sep 10, 2009
- Roland Hampp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ISOLATION LAYER IN SEMICONDCUTOR DEVICE
- Publication number 20090098735
- Publication date Apr 16, 2009
- Eun-Sang Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Semiconductor Device
- Publication number 20090004815
- Publication date Jan 1, 2009
- Hynix Semiconductor Inc.
- Yeong Eui Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an element isolating insulating film
- Publication number 20080224252
- Publication date Sep 18, 2008
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin layer structure and method of forming the same
- Publication number 20060286298
- Publication date Dec 21, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-Kyu Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation-less approach to fabricating strained semiconductor on...
- Publication number 20060234479
- Publication date Oct 19, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device incorporating a defect controlled strained cha...
- Publication number 20050205936
- Publication date Sep 22, 2005
- John M. Grant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming a high germanium concentration silicon germanium...
- Publication number 20050136626
- Publication date Jun 23, 2005
- Mike Morse
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

using selective deposition of single crystal silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Selective capping processes and structures formed thereby

Semiconductor devices

Oxidized cavity structures within and under semiconductor devices

Selective capping processes and structures formed thereby

Device substrate with high thermal conductivity and method of manuf...

Epitaxial oxide fin segments to prevent strained semiconductor fin...

Methods of forming semiconductor devices

Selective capping processes and structures formed thereby

Selective capping processes and structures formed thereby

Semiconductor nanowire fabrication

Method of fabricating crystalline island on substrate

Semiconductor nanowire fabrication

Method for forming a multiple layer epitaxial layer on a wafer

Localized region of isolated silicon over recessed dielectric layer

Method for making a semi-conducting substrate located on an insulat...

Composite substrate and method for manufacturing same

Method of producing a silicon-on-insulator article

Multiple layer substrate

Semiconductor device and method for forming the same

Method of manufacturing a base substrate for a semi-conductor on in...

Method for making a semi-conducting substrate located on an insulat...

Threshold voltage consistency and effective width in same-substrate...

Semiconductor device having an element isolating insulating film

Method for manufacturing semiconductor device

Method for forming horizontal buried channels or cavities in wafers...

Thin layer structure and method of forming the same

Silicon-on-insulator structures and methods

Implantation-less approach to fabricating strained semiconductor on...

Microelectronic structure with a high germanium concentration silic...

Optical system with a high germanium concentration silicon germaniu...

Patents Applicationslast 30 patents

INERTIAL SENSOR, METHOD OF MANUFACTURING INERTIAL SENSOR, AND INERT...

COMPOSITE SUBSTRATE AND PRODUCTION METHOD THEREFOR

Selective Capping Processes and Structures Formed Thereby

SEMICONDUCTOR DEVICES

Selective Capping Processes and Structures Formed Thereby

Device Substrate With High Thermal Conductivity And Method Of Manuf...

OXIDIZED CAVITY STRUCTURES WITHIN AND UNDER SEMICONDUCTOR DEVICES

Selective Capping Processes and Structures Formed Thereby

Selective Capping Processes and Structures Formed Thereby

SEMICONDUCTOR NANOWIRE FABRICATION

PREPARATION OF SILICON-GERMANIUM-ON-INSULATOR STRUCTURES

METHOD OF FABRICATING CRYSTALLINE ISLAND ON SUBSTRATE

LOCALIZED REGION OF ISOLATED SILICON OVER RECESSED DIELECTRIC LAYER

METHOD OF PRODUCING A SILICON-ON-INSULATOR ARTICLE

Multiple Layer Substrate

COMPOSITE SUBSTRATE AND PROCESS FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULAT...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

METHOD OF MANUFACTURING A BASE SUBSTRATE FOR A SEMI-CONDUCTOR ON IN...

METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULAT...

LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS

Threshold Voltage Consistency and Effective Width in Same-Substrate...

METHOD OF FORMING ISOLATION LAYER IN SEMICONDCUTOR DEVICE

Method for Manufacturing Semiconductor Device

Semiconductor device having an element isolating insulating film

Thin layer structure and method of forming the same

Implantation-less approach to fabricating strained semiconductor on...

Semiconductor device incorporating a defect controlled strained cha...

Methods of forming a high germanium concentration silicon germanium...