with a ferroelectric gate insulator

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CPC
H01L29/6684

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6684with a ferroelectric gate insulator

Industries

Patents Grantslast 30 patents

Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization enhancement structure for enlarging memory window
- Patent number 12,176,433
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,166,123
- Issue date Dec 10, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures for a ferroelectric field-effect transistor and related...
- Patent number 12,159,935
- Issue date Dec 3, 2024
- GlobalFoundries Dresden Module One Limited Liability Company & KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier barrier layer for tuning a threshold voltage of a ferroelec...
- Patent number 12,154,965
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, ternary inverter comprising same, and transistor manufa...
- Patent number 12,154,950
- Issue date Nov 26, 2024
- UNIST (Ulsan National Institute of Science and Technology)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including ferroelectri...
- Patent number 12,148,829
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wilman Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic device
- Patent number 12,136,465
- Issue date Nov 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 12,133,392
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,133,393
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Do Young Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor device and method of extracting defect...
- Patent number 12,132,109
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Hagyoul Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cocktail layer over gate dielectric layer of FET FeRAM
- Patent number 12,127,411
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric tunnel junction memory device using a magnesium oxide...
- Patent number 12,120,885
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,120,866
- Issue date Oct 15, 2024
- SK Hynix Inc.
- Jun Sik Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,120,884
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Yu Ling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer over FET FeRAM to increase charge mobility
- Patent number 12,114,507
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film structure and semiconductor device including the same
- Patent number 12,107,140
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 12,108,605
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,107,138
- Issue date Oct 1, 2024
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication for memory applications
- Patent number 12,108,604
- Issue date Oct 1, 2024
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 12,096,610
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Hee Bum Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING MEMORY DEVICE
- Publication number 20250008738
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE TOPOLOGICAL QUANTUM FIELD-EFFECT TRANSISTOR
- Publication number 20250006821
- Publication date Jan 2, 2025
- MONASH UNIVERSITY
- Michael Sears Fuhrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240407174
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FERROELECTRIC MEMORY DEVICE
- Publication number 20240397725
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun-Chieh Lu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME
- Publication number 20240397726
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Ilho Myeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER
- Publication number 20240397728
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240397729
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20240389341
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389349
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20240387685
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387710
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389344
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...
- Publication number 20240389340
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF TRANSISTOR AND MANUFACTURING METHOD OF INTE...
- Publication number 20240387727
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20240379828
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Taeyoung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAYS WITH LEAKERS
- Publication number 20240381661
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Riccardo Pazzocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379848
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wilman TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240381656
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION STRUCTURE WITH L-SHAPED SPACERS
- Publication number 20240381658
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, CAPACITIVE MEMORY STRUCTURE, AND METHODS THEREOF
- Publication number 20240381660
- Publication date Nov 14, 2024
- Ferroelectric Memory GmbH
- Stefan Ferdinand MUELLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY
- Publication number 20240373641
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20240373642
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...
- Publication number 20240365560
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240365555
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yu Ling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...
- Publication number 20240357829
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- BO-FENG YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuitry, Method Used In The Fabrication Of A Vertical...
- Publication number 20240355909
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Masihhur R. Laskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240355926
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS

with a ferroelectric gate insulator

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ribbon or wire transistor stack with selective dipole threshold vol...

Polarization enhancement structure for enlarging memory window

Gate-all-around device with trimmed channel and dipoled dielectric...

Field-effect transistor (FET) with self-aligned ferroelectric capac...

FeRAM MFM structure with selective electrode etch

Method of manufacturing semiconductor device and associated memory...

Semiconductor device

Structures for a ferroelectric field-effect transistor and related...

Carrier barrier layer for tuning a threshold voltage of a ferroelec...

Transistor, ternary inverter comprising same, and transistor manufa...

Semiconductor device and method

Method of manufacturing semiconductor device including ferroelectri...

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Ferroelectric random-access memory cell

Semiconductor device

Semiconductor device and electronic device

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Memory device and forming method thereof

Method of manufacturing semiconductor device

Ferroelectric semiconductor device and method of extracting defect...

Cocktail layer over gate dielectric layer of FET FeRAM

Ferroelectric tunnel junction memory device using a magnesium oxide...

Semiconductor device and method for fabricating the same

Semiconductor device and method of manufacturing the same

Capping layer over FET FeRAM to increase charge mobility

Thin film structure and semiconductor device including the same

Memory device and method of forming the same

Semiconductor device and method of manufacturing the same

Vertical transistor fabrication for memory applications

Semiconductor memory device and method of fabricating the same

Patents Applicationslast 30 patents

METHOD OF FORMING MEMORY DEVICE

NEGATIVE CAPACITANCE TOPOLOGICAL QUANTUM FIELD-EFFECT TRANSISTOR

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

ANTI-FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME

FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER

MEMORY DEVICE AND FORMING METHOD THEREOF

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

MEMORY DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...

MANUFACTURING METHOD OF TRANSISTOR AND MANUFACTURING METHOD OF INTE...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

MEMORY ARRAYS WITH LEAKERS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES

FERROELECTRIC TUNNEL JUNCTION STRUCTURE WITH L-SHAPED SPACERS

MEMORY CELL, CAPACITIVE MEMORY STRUCTURE, AND METHODS THEREOF

CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY

DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...

Integrated Circuitry, Method Used In The Fabrication Of A Vertical...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME