with a heterojunction

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CPC
H01L29/66219

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66219with a heterojunction

Industries

Patents Grantslast 30 patents

Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride transistor structure capable of reducing leakage...
- Patent number 11,810,910
- Issue date Nov 7, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a programming element
- Patent number 11,444,090
- Issue date Sep 13, 2022
- Semiconductor Components Industries, LLC
- Jaume Roig-Guitart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride polarization junction diodes
- Patent number 11,355,652
- Issue date Jun 7, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode and method for manufacturing the same
- Patent number 11,201,250
- Issue date Dec 14, 2021
- Electronics and Telecommunications Research Institute
- Dong Woo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for using remote plasma chemical vapor deposition (RP-CVD)...
- Patent number 11,069,525
- Issue date Jul 20, 2021
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for using remote plasma chemical vapor deposition (RP-CVD)...
- Patent number 11,069,524
- Issue date Jul 20, 2021
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor connected diodes and connected III-N devices and their m...
- Patent number 10,763,350
- Issue date Sep 1, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for using remote plasma chemical vapor deposition (RP-CVD)...
- Patent number 10,622,206
- Issue date Apr 14, 2020
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic doping-based all GNR tunnel field-effect transistor
- Patent number 10,593,778
- Issue date Mar 17, 2020
- Cemalettin Basaran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode and method of manufacturing the same
- Patent number 10,367,101
- Issue date Jul 30, 2019
- Gpower Semiconductor, Inc.
- Hongwei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,355,115
- Issue date Jul 16, 2019
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for AlAs—Ge—AlAs structure based plasma p-i-n...
- Patent number 10,304,824
- Issue date May 28, 2019
- XI'AN CREATION KEJI CO., LTD.
- Xiaoxue Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction diode having an increased non-repetitive surge current
- Patent number 10,283,499
- Issue date May 7, 2019
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Yannick Baines
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Water-insensitive gas sensor using polymer-encapsulated Pt—AlGaN/Ga...
- Patent number 10,269,989
- Issue date Apr 23, 2019
- University of Florida Research Foundation, Incorporated
- Fan Ren
- G01 - MEASURING TESTING
Information Patent Grant
Methods for using remote plasma chemical vapor deposition (RP-CVD)...
- Patent number 10,236,409
- Issue date Mar 19, 2019
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,141,435
- Issue date Nov 27, 2018
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,134,884
- Issue date Nov 20, 2018
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,134,883
- Issue date Nov 20, 2018
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Junction interlayer dielectric for reducing leakage current in semi...
- Patent number 10,038,057
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device using high speed epit...
- Patent number 10,014,216
- Issue date Jul 3, 2018
- Korea Institute of Science and Technology
- Sanghyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode and method of manufacturing the same
- Patent number 9,985,143
- Issue date May 29, 2018
- Gpower Semiconductor, Inc.
- Hongwei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor-metal (MSM) heterojunction diode
- Patent number 9,941,382
- Issue date Apr 10, 2018
- Carnegie Mellon University
- Rozana Hussin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method for manufacturing the same
- Patent number 9,923,049
- Issue date Mar 20, 2018
- Fujitsu Limited
- Naoya Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of defect induced leakage in III-V semiconductor devices
- Patent number 9,905,637
- Issue date Feb 27, 2018
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode structure and method of fabrication
- Patent number 9,711,601
- Issue date Jul 18, 2017
- IMEC
- Stefaan Decoutere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,564,491
- Issue date Feb 7, 2017
- Kabushiki Kaisha Toshiba
- Mariko Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor-metal (MSM) heterojunction diode
- Patent number 9,553,163
- Issue date Jan 24, 2017
- Carnegie Mellon University
- Rozana Hussin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and manufacturing method of the same
- Patent number 9,515,063
- Issue date Dec 6, 2016
- Fujitsu Limited
- Tadahiro Imada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus with band energy alignments
- Patent number 9,318,562
- Issue date Apr 19, 2016
- Fujitsu Limited
- Tsuyoshi Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM
- Publication number 20240194798
- Publication date Jun 13, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESONANT TUNNELING DIODES AND MANUFACTURING METHODS THEREOF
- Publication number 20230343877
- Publication date Oct 26, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD EFFECT TRANSISTOR
- Publication number 20230326921
- Publication date Oct 12, 2023
- International Business Machines Corporation
- Eunjung Cha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESONANT TUNNELING DIODES AND MANUFACTURING METHODS THEREOF
- Publication number 20230290892
- Publication date Sep 14, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERAHERTZ MODULE
- Publication number 20230260913
- Publication date Aug 17, 2023
- Rohm Co., Ltd.
- Masayuki FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...
- Publication number 20230260988
- Publication date Aug 17, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESONANT TUNNELING DIODE, OSCILLATOR AND DETECTION SYSTEM
- Publication number 20230246112
- Publication date Aug 3, 2023
- Canon Kabushiki Kaisha
- TATSURO UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF
- Publication number 20230099660
- Publication date Mar 30, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN/TWO-DIMENSIONAL ALN HETEROJUNCTION RECTIFIER ON SILICON SUBSTRA...
- Publication number 20230030977
- Publication date Feb 2, 2023
- SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Wenliang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MA...
- Publication number 20230015231
- Publication date Jan 19, 2023
- Fujitsu Limited
- Kenichi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR
- Publication number 20220406949
- Publication date Dec 22, 2022
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220285565
- Publication date Sep 8, 2022
- GPOWER SEMICONDUCTOR, INC.
- Guangmin DENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH STRAIGHT SEGMENT ANODES
- Publication number 20210367084
- Publication date Nov 25, 2021
- MACOM Technology Solutions Holdings, Inc.
- Timothy Edward Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20210327886
- Publication date Oct 21, 2021
- Semiconductor Components Industries, LLC
- Jaume ROIG-GUITART
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE POLARIZATION JUNCTION DIODES
- Publication number 20210005759
- Publication date Jan 7, 2021
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200335639
- Publication date Oct 22, 2020
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Dong Woo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Using Remote Plasma Chemical Vapor Deposition (RP-CVD)...
- Publication number 20200243331
- Publication date Jul 30, 2020
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Using Remote Plasma Chemical Vapor Deposition (RP-CVD)...
- Publication number 20200203158
- Publication date Jun 25, 2020
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CONNECTED DIODES AND CONNECTED III-N DEVICES AND THEIR M...
- Publication number 20200066890
- Publication date Feb 27, 2020
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR USING REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD)...
- Publication number 20190189436
- Publication date Jun 20, 2019
- Lumileds LLC
- Isaac Wildeson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180248049
- Publication date Aug 30, 2018
- Gpower Semiconductor, Inc.
- Hongwei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WATER-INSENSITIVE GAS SENSOR USING POLYMER-ENCAPSULATED Pt-AlGaN/Ga...
- Publication number 20180248048
- Publication date Aug 30, 2018
- University of Florida Research Foundation, Incorporated
- Fan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE AND METHOD THEREFOR
- Publication number 20180240791
- Publication date Aug 23, 2018
- Semiconductor Components Industries, LLC
- Woochul JEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE
- Publication number 20170162666
- Publication date Jun 8, 2017
- Carnegie Mellon University
- Rozana Hussin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170098719
- Publication date Apr 6, 2017
- Gpower Semiconductor, Inc.
- Hongwei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20160148924
- Publication date May 26, 2016
- Fujitsu Limited
- Tadahiro IMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DIODES WITH LOW REVERSE BIAS CURRENTS
- Publication number 20140273422
- Publication date Sep 18, 2014
- Transphorm, Inc.
- Yuvaraj Dora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE STRUCTURE AND METHOD OF FABRICATION
- Publication number 20140103357
- Publication date Apr 17, 2014
- IMEC
- STEFAAN DECOUTERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130126942
- Publication date May 23, 2013
- POWDEC K. K.
- Akira Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130126897
- Publication date May 23, 2013
- Fujitsu Limited
- Tadahiro IMADA
- H01 - BASIC ELECTRIC ELEMENTS

with a heterojunction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Group III nitride transistor structure capable of reducing leakage...

Semiconductor device having a programming element

Group III-nitride polarization junction diodes

Schottky barrier diode and method for manufacturing the same

Methods for using remote plasma chemical vapor deposition (RP-CVD)...

Methods for using remote plasma chemical vapor deposition (RP-CVD)...

Transistor connected diodes and connected III-N devices and their m...

Methods for using remote plasma chemical vapor deposition (RP-CVD)...

Electrostatic doping-based all GNR tunnel field-effect transistor

Schottky diode and method of manufacturing the same

Electronic device using group III nitride semiconductor and its fab...

Manufacturing method for AlAs—Ge—AlAs structure based plasma p-i-n...

Heterojunction diode having an increased non-repetitive surge current

Water-insensitive gas sensor using polymer-encapsulated Pt—AlGaN/Ga...

Methods for using remote plasma chemical vapor deposition (RP-CVD)...

Electronic device using group III nitride semiconductor and its fab...

Electronic device using group III nitride semiconductor and its fab...

Electronic device using group III nitride semiconductor and its fab...

Junction interlayer dielectric for reducing leakage current in semi...

Method for manufacturing semiconductor device using high speed epit...

Schottky diode and method of manufacturing the same

Metal-semiconductor-metal (MSM) heterojunction diode

Compound semiconductor device and method for manufacturing the same

Reduction of defect induced leakage in III-V semiconductor devices

Schottky diode structure and method of fabrication

Semiconductor device

Metal-semiconductor-metal (MSM) heterojunction diode

Compound semiconductor device and manufacturing method of the same

Semiconductor apparatus with band energy alignments

Patents Applicationslast 30 patents

DIODE, POWER RECEPTION DEVICE AND POWER TRANSMISSION SYSTEM

RESONANT TUNNELING DIODES AND MANUFACTURING METHODS THEREOF

SEMICONDUCTOR DEVICE WITH FIELD EFFECT TRANSISTOR

RESONANT TUNNELING DIODES AND MANUFACTURING METHODS THEREOF

TERAHERTZ MODULE

GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...

RESONANT TUNNELING DIODE, OSCILLATOR AND DETECTION SYSTEM

SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF

GAN/TWO-DIMENSIONAL ALN HETEROJUNCTION RECTIFIER ON SILICON SUBSTRA...

SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MA...

DIODE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

DIODES WITH STRAIGHT SEGMENT ANODES

METHOD OF FORMING A SEMICONDUCTOR DEVICE

GROUP III-NITRIDE POLARIZATION JUNCTION DIODES

SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME

Methods For Using Remote Plasma Chemical Vapor Deposition (RP-CVD)...

Methods For Using Remote Plasma Chemical Vapor Deposition (RP-CVD)...

TRANSISTOR CONNECTED DIODES AND CONNECTED III-N DEVICES AND THEIR M...

METHODS FOR USING REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD)...

SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME

WATER-INSENSITIVE GAS SENSOR USING POLYMER-ENCAPSULATED Pt-AlGaN/Ga...

METHOD OF FORMING A SEMICONDUCTOR DEVICE AND METHOD THEREFOR

METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE

SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME

COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

METHOD FOR MAKING SEMICONDUCTOR DIODES WITH LOW REVERSE BIAS CURRENTS

SCHOTTKY DIODE STRUCTURE AND METHOD OF FABRICATION

SEMICONDUCTOR DEVICE

COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME