with a particular manufacturing method of the gate insulating layers

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H01L21/823462

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823462with a particular manufacturing method of the gate insulating layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and forming method therefor
- Patent number 11,967,571
- Issue date Apr 23, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yi-Wang Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide structures in semiconductor devices
- Patent number 11,961,766
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam-filling of metal gates with Si-containing layers
- Patent number 11,948,981
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric protection layer in middle-of-line interconnect structur...
- Patent number 11,942,372
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Da Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with oxide-nitride stack
- Patent number 11,935,839
- Issue date Mar 19, 2024
- Icemos Technology Corporation
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate dielectric layers grown with an inhibitor layer
- Patent number 11,935,740
- Issue date Mar 19, 2024
- Texas Instruments Incorporated
- Mark Francis Arendt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating hydrogen treated surface of semiconductor de...
- Patent number 11,929,410
- Issue date Mar 12, 2024
- SK Hynix Inc.
- Jin Woong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of controlling the same
- Patent number 11,925,025
- Issue date Mar 5, 2024
- Renesas Electronics Corporation
- Junichi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,923,249
- Issue date Mar 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar devices with consistent base dielectric
- Patent number 11,908,743
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with non-conformal gate dieletric layers
- Patent number 11,908,745
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yung-Hsiang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded flash memory device with floating gate embedded in a subst...
- Patent number 11,903,191
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple gate field-effect transistors having various gate oxide th...
- Patent number 11,894,276
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device
- Patent number 11,894,273
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including dipole incorporation for threshold vol...
- Patent number 11,894,367
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage three-dimensional devices having dielectric liners
- Patent number 11,881,486
- Issue date Jan 23, 2024
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for enlarging tip portion of a fin-shaped structure
- Patent number 11,876,095
- Issue date Jan 16, 2024
- United Microelectronics Corp.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,876,094
- Issue date Jan 16, 2024
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures without fin end gap
- Patent number 11,869,889
- Issue date Jan 9, 2024
- Intel Corporation
- Szuya S. Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,869,887
- Issue date Jan 9, 2024
- Danfeng Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with nanosheet transistors with robust gate oxide
- Patent number 11,869,955
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Ni Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,862,632
- Issue date Jan 2, 2024
- Samsung Electronics Co, Ltd.
- Kyong-Sik Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K gate dielectric
- Patent number 11,862,706
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 11,855,162
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,854,688
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,855,168
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure, fin field-effect transistor, and method of manufact...
- Patent number 11,855,083
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,855,080
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,844,216
- Issue date Dec 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Embedded Flash Memory Device with Floating Gate Embedded in a Subst...
- Publication number 20240147716
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DIPOLE INCORPORATION FOR THRESHOLD VOL...
- Publication number 20240145470
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lung-Kun CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136352
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Natsumi IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE
- Publication number 20240113187
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhu-Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20240113128
- Publication date Apr 4, 2024
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240105720
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240096705
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MV DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240096989
- Publication date Mar 21, 2024
- Shanghai Huali Integrated Circuit Corporation
- Qiwei WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240096878
- Publication date Mar 21, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng MAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING...
- Publication number 20240096883
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP
- Publication number 20240088143
- Publication date Mar 14, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACT...
- Publication number 20240088144
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contacts for Semiconductor Devices and Methods of Forming the Same
- Publication number 20240088244
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240079275
- Publication date Mar 7, 2024
- Fuji Electric Co., Ltd.
- Takashi TSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063275
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240047272
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- I-MING CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2-D MATERIAL SEMICONDUCTOR DEVICE
- Publication number 20240030034
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yen LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Seam-Filling of Metal Gates with Si-Containing Layers
- Publication number 20240021680
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230411490
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230402463
- Publication date Dec 14, 2023
- Samsung Electronics Co., Ltd.
- Hoonsung CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Semiconductor Devices With Different Threshold Voltages And...
- Publication number 20230395432
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Device by Driving Hydrogen into a...
- Publication number 20230386847
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hongfa LUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Having Gate Dielectric Layers of Varying Thic...
- Publication number 20230387114
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT
- Publication number 20230387244
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anhao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING
- Publication number 20230378294
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR
- Publication number 20230378295
- Publication date Nov 23, 2023
- STMicroelectronics (Crolles 2) SAS
- Siddhartha DHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED DOPING IN A GATE DIELECTRIC LAYER
- Publication number 20230378329
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD
- Publication number 20230378291
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20230369123
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIEN-HAO CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20230369124
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate insulating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and forming method therefor

Gate oxide structures in semiconductor devices

Semiconductor device including a gate structure

Seam-filling of metal gates with Si-containing layers

Dielectric protection layer in middle-of-line interconnect structur...

Semiconductor device with oxide-nitride stack

Dual gate dielectric layers grown with an inhibitor layer

Method for fabricating hydrogen treated surface of semiconductor de...

Semiconductor device and method of controlling the same

Semiconductor device and method for manufacturing the same

Planar devices with consistent base dielectric

Semiconductor device with non-conformal gate dieletric layers

Embedded flash memory device with floating gate embedded in a subst...

Multiple gate field-effect transistors having various gate oxide th...

Methods of forming a semiconductor device

Integrated circuit including dipole incorporation for threshold vol...

High voltage three-dimensional devices having dielectric liners

Method for enlarging tip portion of a fin-shaped structure

Method for fabricating semiconductor device

Self-aligned gate endcap (SAGE) architectures without fin end gap

Semiconductor device and manufacturing method thereof

Integrated circuit with nanosheet transistors with robust gate oxide

Semiconductor device and method of fabricating the same

High-K gate dielectric

Contacts for semiconductor devices and methods of forming the same

Semiconductor device and method

Semiconductor device and manufacturing method thereof

Gate structure, fin field-effect transistor, and method of manufact...

Semiconductor device and method of fabricating the same

Three-dimensional memory devices and fabricating methods thereof

Patents Applicationslast 30 patents

Embedded Flash Memory Device with Floating Gate Embedded in a Subst...

INTEGRATED CIRCUIT INCLUDING DIPOLE INCORPORATION FOR THRESHOLD VOL...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

MV DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACT...

Contacts for Semiconductor Devices and Methods of Forming the Same

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE

2-D MATERIAL SEMICONDUCTOR DEVICE

Seam-Filling of Metal Gates with Si-Containing Layers

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES

P-Type Semiconductor Devices With Different Threshold Voltages And...

Method of Forming a Semiconductor Device by Driving Hydrogen into a...

Semiconductor Devices Having Gate Dielectric Layers of Varying Thic...

PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT

TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING

TRANSISTOR

CONTROLLED DOPING IN A GATE DIELECTRIC LAYER

MIDDLE-OF-LINE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Nanostructure Field-Effect Transistor Device and Method of Forming