with a particular manufacturing method of the source or drain structures

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H01L21/823814

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823814with a particular manufacturing method of the source or drain structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual contact process with stacked metal layers
- Patent number 12,170,319
- Issue date Dec 17, 2024
- Intel Corporation
- Kevin Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation layers in stacked semiconductor devices
- Patent number 12,166,037
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,166,038
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shun-Jang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for semiconductor device and method
- Patent number 12,166,078
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,938
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Hyojin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damage implantation of cap layer
- Patent number 12,154,987
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tiered-profile contact for semiconductor
- Patent number 12,148,663
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage through meta stable plasma treatment
- Patent number 12,148,620
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor local interconnects
- Patent number 12,148,702
- Issue date Nov 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated hybrid standard cell structure with gate-all-around device
- Patent number 12,148,745
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hao Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and device for boosting performance of FinFETs via strained...
- Patent number 12,148,830
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement contact process
- Patent number 12,142,534
- Issue date Nov 12, 2024
- Applied Materials, Inc.
- Sankuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,659
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,607
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Cheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,655
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost, high performance analog metal oxide semiconductor transistor
- Patent number 12,136,625
- Issue date Nov 5, 2024
- Texas Instruments Incorporated
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 12,136,662
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and methods of forming same
- Patent number 12,132,107
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy process for the formation of CFET local interconn...
- Patent number 12,131,954
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,132,105
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Hojun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra dense 3D routing for compact 3D designs
- Patent number 12,131,956
- Issue date Oct 29, 2024
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried metal track and methods forming same
- Patent number 12,125,850
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pochun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid source drain regions formed based on same fin and methods fo...
- Patent number 12,119,270
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of forming
- Patent number 12,119,401
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Tai Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- Publication number 20240421191
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...
- Publication number 20240413220
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413158
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- SUNGMIN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...
- Publication number 20240413223
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TUNABLE EPITAXY STRUCTURES AND METHOD OF...
- Publication number 20240413018
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CFETS AND THE METHODS OF FORMING THE SAME
- Publication number 20240413019
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Yun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR REDUCING RANDOM DOPAN...
- Publication number 20240413004
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- Yu Jie JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK FOR STACKED MULTI-GATE DEVICE
- Publication number 20240413039
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413252
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seungmin SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...
- Publication number 20240413155
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Plugs With Reduced R/C and the Methods of Forming The Same
- Publication number 20240413020
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Hsiu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SILICIDE PROCESS USING RUTHENIUM SILICIDE
- Publication number 20240404888
- Publication date Dec 5, 2024
- Applied Materuals, Inc.
- Thomas Anthony Empante
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240405021
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES
- Publication number 20240404887
- Publication date Dec 5, 2024
- Applied Materials, Inc.
- Yan ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN JOG STRUCTURE AND METHODS OF MAKING SAME
- Publication number 20240405097
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY
- Publication number 20240395816
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...
- Publication number 20240395664
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method for Forming the Same
- Publication number 20240395665
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GERMANIUM-BASED CHANNEL
- Publication number 20240395812
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER
- Publication number 20240397694
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND RELATED METHOD
- Publication number 20240395813
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsiung PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395820
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT INTEGRATION IN COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET)...
- Publication number 20240395879
- Publication date Nov 28, 2024
- Applied Materials, Inc.
- San-Kuei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240397692
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240395598
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH HYBRID FINS
- Publication number 20240395809
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240395823
- Publication date Nov 28, 2024
- RENESAS ELECTRONICS CORPORATION
- Takaaki TSUNOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240387237
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Cyuan Lu
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the source or drain structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Stacked semiconductor device with nanostructure channels

Semiconductor device with fin transistors and manufacturing method...

Dual contact process with stacked metal layers

Semiconductor device and method

Gate structure and methods thereof

Isolation layers in stacked semiconductor devices

Semiconductor device and a method for fabricating the same

Contact structure for semiconductor device and method

Semiconductor device

Damage implantation of cap layer

Tiered-profile contact for semiconductor

Tuning threshold voltage through meta stable plasma treatment

Semiconductor device with transistor local interconnects

Integrated hybrid standard cell structure with gate-all-around device

Method and device for boosting performance of FinFETs via strained...

Replacement contact process

Transistor gate structures and methods of forming the same

Semiconductor device

Transistor gate structures and methods of forming the same

Contact over active gate structures for advanced integrated circuit...

Low cost, high performance analog metal oxide semiconductor transistor

Methods of forming semiconductor devices

Semiconductor structure and methods of forming same

Selective epitaxy process for the formation of CFET local interconn...

Bonding and isolation techniques for stacked transistor structures

Semiconductor device and method for fabricating the same

Ultra dense 3D routing for compact 3D designs

Buried metal track and methods forming same

Hybrid source drain regions formed based on same fin and methods fo...

Semiconductor device and methods of forming

Patents Applicationslast 30 patents

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...

SEMICONDUCTOR DEVICE WITH TUNABLE EPITAXY STRUCTURES AND METHOD OF...

CFETS AND THE METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR REDUCING RANDOM DOPAN...

HEAT SINK FOR STACKED MULTI-GATE DEVICE

SEMICONDUCTOR DEVICE

STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...

Contact Plugs With Reduced R/C and the Methods of Forming The Same

DUAL SILICIDE PROCESS USING RUTHENIUM SILICIDE

TRANSISTOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES

FIN JOG STRUCTURE AND METHODS OF MAKING SAME

HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY

SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...

Semiconductor Structure and Method for Forming the Same

SEMICONDUCTOR DEVICE WITH GERMANIUM-BASED CHANNEL

SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER

FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND RELATED METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CONTACT INTEGRATION IN COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET)...

SEMICONDUCTOR DEVICE

Semiconductor Device and Method

SEMICONDUCTOR DEVICE STRUCTURE WITH HYBRID FINS

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FINFET DEVICE AND METHOD OF FORMING SAME