with a particular manufacturing method of the source or drain structures

Industry

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H01L21/823814

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823814with a particular manufacturing method of the source or drain structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet transistor with ferroelectric region
- Patent number 11,973,141
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,967,594
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistors in integrated circuits
- Patent number 11,968,819
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising separate different well regions wit...
- Patent number 11,967,644
- Issue date Apr 23, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide-sandwiched source/drain region and method of fabricating same
- Patent number 11,967,621
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nanosheet transistor and methods of fab...
- Patent number 11,961,840
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal gate for multigate device and method of forming...
- Patent number 11,961,763
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,961,806
- Issue date Apr 16, 2024
- Samsung Electronics Co., Ltd.
- Noh Yeong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source/drain features
- Patent number 11,961,912
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-An Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 11,961,913
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS FinFET structures including work-function materials having dif...
- Patent number 11,961,768
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an epitaxy region
- Patent number 11,955,547
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Jen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels and manufa...
- Patent number 11,955,384
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,487
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Yoon Tae Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure
- Patent number 11,955,553
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,956,938
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tetsu Ohtou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 11,949,016
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, integrated circuit and methods of manufacturi...
- Patent number 11,948,941
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with a source drain epitaxy repla...
- Patent number 11,942,374
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,942,552
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure
- Patent number 11,942,376
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with fin str...
- Patent number 11,942,375
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsing-Hui Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,942,540
- Issue date Mar 26, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming the same
- Patent number 11,942,523
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,935,953
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Donghwan Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,935,924
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Noh Yeong Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240145476
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Myoung-Sun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ISOLATION STRUCTURE
- Publication number 20240145249
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Gang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20240145480
- Publication date May 2, 2024
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT
- Publication number 20240145555
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Heng Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240145569
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia YEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240145475
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-WEI PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240145576
- Publication date May 2, 2024
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Do...
- Publication number 20240136287
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNAPTIC ARRAY STRUCTURE BASED ON CMOS INTEGRATION TECHNOLOGY AND M...
- Publication number 20240136359
- Publication date Apr 25, 2024
- Seoul National University R&DB Foundation
- Jong-Ho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...
- Publication number 20240120381
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240120203
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HIGH PERFORMANCE 3D NANO SHEET DEVICES
- Publication number 20240113114
- Publication date Apr 4, 2024
- TOKYO ELECTRON LIMITED
- H. Jim FULFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
- Publication number 20240112985
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...
- Publication number 20240113162
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF
- Publication number 20240112958
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi YEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET)
- Publication number 20240113117
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES
- Publication number 20240113119
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tetsu Ohtou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-K Gate Spacer and Methods for Forming the Same
- Publication number 20240113202
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device And Related Methods
- Publication number 20240112959
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH UNIFORM EPITAXIAL SOURCE OR DRAI...
- Publication number 20240105774
- Publication date Mar 28, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20240105724
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- DONGHOON HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES
- Publication number 20240105725
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUTS WITH SELF-FORMING POLYMER LAYER
- Publication number 20240105452
- Publication date Mar 28, 2024
- Intel Corporation
- Reza Bayati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO METAL GATE CUTS
- Publication number 20240105453
- Publication date Mar 28, 2024
- Intel Corporation
- Reza Bayati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240096710
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Hsien TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...
- Publication number 20240096889
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Seung Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Profile Control of Epitaxial Structures in Semiconductor Devices
- Publication number 20240096959
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufactoring Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL DIELECTRIC STRESSORS
- Publication number 20240096946
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT
- Publication number 20240096891
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the source or drain structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nanosheet transistor with ferroelectric region

Semiconductor device structure and methods of forming the same

Gate-all-around field-effect transistors in integrated circuits

Semiconductor device comprising separate different well regions wit...

Silicide-sandwiched source/drain region and method of fabricating same

Semiconductor device having nanosheet transistor and methods of fab...

Self-aligned metal gate for multigate device and method of forming...

Semiconductor device

Merged source/drain features

Semiconductor device structure and method for forming the same

Dual metal silicide structures for advanced integrated circuit stru...

CMOS FinFET structures including work-function materials having dif...

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device including an epitaxy region

Stacked semiconductor device with nanostructure channels and manufa...

Semiconductor device

Heterogeneous metal line compositions for advanced integrated circu...

Source/drain structure

Semiconductor device and manufacturing method thereof

Multi-gate device and related methods

Trench contact structures for advanced integrated circuit structure...

Semiconductor device, integrated circuit and methods of manufacturi...

Nanosheet field effect transistor with a source drain epitaxy repla...

Method of manufacturing a semiconductor device and a semiconductor...

Method for manufacturing semiconductor structure

Structure and formation method of semiconductor device with fin str...

Semiconductor device and method for manufacturing the same

Semiconductor devices and methods of forming the same

Semiconductor devices

Semiconductor device and method of fabricating the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH GATE ISOLATION STRUCTURE

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Do...

SYNAPTIC ARRAY STRUCTURE BASED ON CMOS INTEGRATION TECHNOLOGY AND M...

SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHODS FOR FORMING HIGH PERFORMANCE 3D NANO SHEET DEVICES

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...

CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF

VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET)

HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES

Low-K Gate Spacer and Methods for Forming the Same

Multi-Gate Device And Related Methods

INTEGRATED CIRCUIT STRUCTURES WITH UNIFORM EPITAXIAL SOURCE OR DRAI...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

GATE CUTS WITH SELF-FORMING POLYMER LAYER

HIGH ASPECT RATIO METAL GATE CUTS

INTEGRATED CIRCUIT DEVICE

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...

Profile Control of Epitaxial Structures in Semiconductor Devices

DUAL DIELECTRIC STRESSORS

SELF-ALIGNED BACKSIDE CONTACT