with an active layer made of a group 13/15 material

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H01L29/66856

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66856with an active layer made of a group 13/15 material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gan rectifier suitable for operating under 35GHZ alternating-curren...
- Patent number 11,257,935
- Issue date Feb 22, 2022
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with via structure and package structures com...
- Patent number 10,741,644
- Issue date Aug 11, 2020
- Delta Electronics, Inc.
- Shiau-Shi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,367,099
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,050,154
- Issue date Aug 14, 2018
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET including an InGaAs channel and method of enhancing performance...
- Patent number 10,008,580
- Issue date Jun 26, 2018
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency conductor having improved conductivity
- Patent number 9,735,247
- Issue date Aug 15, 2017
- Forschungszentrum Juelich GmbH
- Martin Mikulics
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride self-aligned vertical MESFET
- Patent number 9,269,793
- Issue date Feb 23, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer with improved current-voltage linearity
- Patent number 9,117,892
- Issue date Aug 25, 2015
- Sumitomo Chemical Company, Limited
- Tsuyoshi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride based semiconductor device and method for manufacturing the...
- Patent number 8,735,941
- Issue date May 27, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Kiyeol Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 8,507,919
- Issue date Aug 13, 2013
- Renesas Electronics Corporation
- Kohji Ishikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 8,487,319
- Issue date Jul 16, 2013
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 8,486,816
- Issue date Jul 16, 2013
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Producing a diamond semiconductor by implanting dopant using ion im...
- Patent number 8,328,936
- Issue date Dec 11, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field effect transistor gate process and structure
- Patent number 8,319,310
- Issue date Nov 27, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a bulk acoustic wave device and a transistor
- Patent number 8,304,271
- Issue date Nov 6, 2012
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor using diamond and process for producing the...
- Patent number 8,242,511
- Issue date Aug 14, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 8,221,548
- Issue date Jul 17, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond semiconductor element and process for producing the same
- Patent number 7,973,339
- Issue date Jul 5, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field effect transistor and method for manufacturing the same
- Patent number 7,902,572
- Issue date Mar 8, 2011
- Electronics and Telecommunications Research Institute
- Ho Kyun Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off field-effect semiconductor device
- Patent number 7,859,019
- Issue date Dec 28, 2010
- Sanken Electric Co., Ltd.
- Mio Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gan-based field effect transistor and production method therefor
- Patent number 7,547,911
- Issue date Jun 16, 2009
- National Institute of Information and Communications Technology, Incorporated...
- Masataka Higashiwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor and method of forming the same
- Patent number 7,541,640
- Issue date Jun 2, 2009
- Flextronics International USA, Inc.
- Berinder P. S. Brar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with recessed gate and shield electrode
- Patent number 7,528,443
- Issue date May 5, 2009
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Kunii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having vertical channel structure
- Patent number 7,439,595
- Issue date Oct 21, 2008
- Matsushita Electric Industrial Co., Ltd.
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for manufacturing the same
- Patent number 7,387,955
- Issue date Jun 17, 2008
- Electronics and Telecommunications Research Institute
- Ho Kyun Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystals usable as group III nitride substrate, m...
- Patent number 7,309,534
- Issue date Dec 18, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating transistors having buried p-type layers bene...
- Patent number 7,297,580
- Issue date Nov 20, 2007
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN crystals and GaN crystal substrate, GaN...
- Patent number 7,288,152
- Issue date Oct 30, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 7,250,642
- Issue date Jul 31, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuyuki Masumoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240079449
- Publication date Mar 7, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230290858
- Publication date Sep 14, 2023
- Sumitomo Electric Industries, Ltd.
- Yukihiro TSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN RECTIFIER SUITABLE FOR OPERATING UNDER 35GHZ ALTERNATING-CURREN...
- Publication number 20210217879
- Publication date Jul 15, 2021
- South China University of Technology
- Wenliang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation Structure For GaN Field Effect Transistor
- Publication number 20190148498
- Publication date May 16, 2019
- WIN Semiconductors Corp.
- Eric LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20180342626
- Publication date Nov 29, 2018
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20170133518
- Publication date May 11, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CHANNEL FIELD EFFECT TRANSISTOR DEVICE HAVING INCREASED AMPLIF...
- Publication number 20160181364
- Publication date Jun 23, 2016
- Northrop Grumman Systems Corporation
- Eric J. Stewart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE
- Publication number 20150200097
- Publication date Jul 16, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET
- Publication number 20150179772
- Publication date Jun 25, 2015
- AVOGY, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20140227836
- Publication date Aug 14, 2014
- Samsung Electro-Mechanics Co., Ltd.
- Kiyeol PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRIC...
- Publication number 20140054680
- Publication date Feb 27, 2014
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET
- Publication number 20130161635
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination by Ion Implantation in GaN
- Publication number 20130126888
- Publication date May 23, 2013
- ePowersoft, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20120146095
- Publication date Jun 14, 2012
- Samsung Electro-Mechanics CO., LTD.
- Kiyeol Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20120034737
- Publication date Feb 9, 2012
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOSTRUCTURE ARRAY TRANSISTOR
- Publication number 20120025169
- Publication date Feb 2, 2012
- SUNDIODE INC.
- Danny E. Mars
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, METHO...
- Publication number 20120025271
- Publication date Feb 2, 2012
- Sumitomo Chemical Company, Limited
- Tsuyoshi NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20110233559
- Publication date Sep 29, 2011
- RENESAS ELECTRONICS CORPORATION
- KOHJI ISHIKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20110070694
- Publication date Mar 24, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20110068352
- Publication date Mar 24, 2011
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR
- Publication number 20100295100
- Publication date Nov 25, 2010
- JENN HWA HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20100289030
- Publication date Nov 18, 2010
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
FIELD EFFECT TRANSISTOR GATE PROCESS AND STRUCTURE
- Publication number 20100244178
- Publication date Sep 30, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...
- Publication number 20100230821
- Publication date Sep 16, 2010
- Koninklijke Philips Electronics N.V.
- Vijayaraghavan Madakasira
- B82 - NANO-TECHNOLOGY
Information Patent Application
HEAT TREATMENT METHOD FOR COMPOUND SEMICONDUCTOR AND APPARATUS THER...
- Publication number 20100055881
- Publication date Mar 4, 2010
- TOKYO ELECTRON LIMITED
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20090261347
- Publication date Oct 22, 2009
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20080251858
- Publication date Oct 16, 2008
- Ho Kyun Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Compound Semiconductor Field Effect Tran...
- Publication number 20080224183
- Publication date Sep 18, 2008
- Muhammad Nawaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20080217626
- Publication date Sep 11, 2008
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME
- Publication number 20080134959
- Publication date Jun 12, 2008
- Nippon Telegraph and Telephone Corporation
- Makoto Kasu
- C30 - CRYSTAL GROWTH

with an active layer made of a group 13/15 material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gan rectifier suitable for operating under 35GHZ alternating-curren...

Semiconductor devices with via structure and package structures com...

Trench vertical JFET with ladder termination

Trench vertical JFET with ladder termination

FET including an InGaAs channel and method of enhancing performance...

High-frequency conductor having improved conductivity

Edge termination by ion implantation in gallium nitride

Method and system for a gallium nitride self-aligned vertical MESFET

Semiconductor wafer with improved current-voltage linearity

Nitride based semiconductor device and method for manufacturing the...

Field-effect transistor

Diamond semiconductor element and process for producing the same

Diamond semiconductor element and process for producing the same

Producing a diamond semiconductor by implanting dopant using ion im...

Field effect transistor gate process and structure

Integrated circuit having a bulk acoustic wave device and a transistor

Field effect transistor using diamond and process for producing the...

Diamond semiconductor element and process for producing the same

Diamond semiconductor element and process for producing the same

Field effect transistor and method for manufacturing the same

Normally-off field-effect semiconductor device

Gan-based field effect transistor and production method therefor

Vertical field-effect transistor and method of forming the same

Semiconductor device with recessed gate and shield electrode

Field effect transistor having vertical channel structure

Field effect transistor and method for manufacturing the same

Group III nitride crystals usable as group III nitride substrate, m...

Methods of fabricating transistors having buried p-type layers bene...

Method of manufacturing GaN crystals and GaN crystal substrate, GaN...

Field-effect transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

GAN RECTIFIER SUITABLE FOR OPERATING UNDER 35GHZ ALTERNATING-CURREN...

Passivation Structure For GaN Field Effect Transistor

Trench Vertical JFET With Ladder Termination

Trench Vertical JFET With Ladder Termination

DUAL-CHANNEL FIELD EFFECT TRANSISTOR DEVICE HAVING INCREASED AMPLIF...

EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE

METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET

NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRIC...

METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET

Edge Termination by Ion Implantation in GaN

NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

NANOSTRUCTURE ARRAY TRANSISTOR

SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, METHO...

FIELD-EFFECT TRANSISTOR

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

FIELD EFFECT TRANSISTOR GATE PROCESS AND STRUCTURE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...

HEAT TREATMENT METHOD FOR COMPOUND SEMICONDUCTOR AND APPARATUS THER...

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

Method for Manufacturing a Compound Semiconductor Field Effect Tran...

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME

DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME