with an active layer made of a group 13/15 material

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H01L29/66924

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66924with an active layer made of a group 13/15 material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 12,170,330
- Issue date Dec 17, 2024
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth uniformity in GaN vertical devices
- Patent number 11,916,134
- Issue date Feb 27, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench power semiconductor devices having improved deep shield...
- Patent number 11,764,295
- Issue date Sep 19, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 11,742,424
- Issue date Aug 29, 2023
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body
- Patent number 11,600,701
- Issue date Mar 7, 2023
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction based vertical gallium nitride JFET power devices
- Patent number 11,575,000
- Issue date Feb 7, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction devices and methods for fabricating the same
- Patent number 11,342,420
- Issue date May 24, 2022
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 11,024,734
- Issue date Jun 1, 2021
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 11,018,253
- Issue date May 25, 2021
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body and method...
- Patent number 11,011,606
- Issue date May 18, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured MISFET/MESFET
- Patent number 10,903,371
- Issue date Jan 26, 2021
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction devices and methods for fabricating the same
- Patent number 10,777,644
- Issue date Sep 15, 2020
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having a heterojunction contact
- Patent number 10,461,074
- Issue date Oct 29, 2019
- Infineon Technologies Austria AG
- Wolfgang Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with improved threshold voltage control
- Patent number 10,396,215
- Issue date Aug 27, 2019
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,355,115
- Issue date Jul 16, 2019
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electronic memory devices
- Patent number 10,243,086
- Issue date Mar 26, 2019
- LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED
- Manus Hayne
- G11 - INFORMATION STORAGE
Information Patent Grant
Continuous crystalline gallium nitride (GaN) PN structure with no i...
- Patent number 10,177,247
- Issue date Jan 8, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,141,435
- Issue date Nov 27, 2018
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,134,884
- Issue date Nov 20, 2018
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electronic device using group III nitride semiconductor and its fab...
- Patent number 10,134,883
- Issue date Nov 20, 2018
- Sixpoint Materials, Inc.
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,096,676
- Issue date Oct 9, 2018
- Renesas Electronics Corporation
- Hisao Inomata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device
- Patent number 10,032,767
- Issue date Jul 24, 2018
- Infineon Technologies Austria AG
- Wolfgang Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 9,842,905
- Issue date Dec 12, 2017
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 9,837,496
- Issue date Dec 5, 2017
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaN ohmic source contacts for vertical power devices
- Patent number 9,508,838
- Issue date Nov 29, 2016
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for planar regrowth in GaN electronic devices
- Patent number 9,502,544
- Issue date Nov 22, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a GaN P-i-N diode using implantation
- Patent number 9,484,470
- Issue date Nov 1, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 9,396,928
- Issue date Jul 19, 2016
- Sumitomo Electric Device Innovations, Inc.
- Tsutomu Komatani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048713
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Zhiwen DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20240258408
- Publication date Aug 1, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240105767
- Publication date Mar 28, 2024
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...
- Publication number 20230369486
- Publication date Nov 16, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having A SiC Semiconductor Body
- Publication number 20230148156
- Publication date May 11, 2023
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20230127978
- Publication date Apr 27, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...
- Publication number 20220149196
- Publication date May 12, 2022
- Cree, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20210399091
- Publication date Dec 23, 2021
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES
- Publication number 20210328057
- Publication date Oct 21, 2021
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY
- Publication number 20210226015
- Publication date Jul 22, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20210210624
- Publication date Jul 8, 2021
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES
- Publication number 20210159337
- Publication date May 27, 2021
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20210005721
- Publication date Jan 7, 2021
- GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY O...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having a SiC Semiconductor Body and Method...
- Publication number 20200111874
- Publication date Apr 9, 2020
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having a Heterojunction Contact
- Publication number 20180323189
- Publication date Nov 8, 2018
- Infineon Technologies Austria AG
- Wolfgang Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180076286
- Publication date Mar 15, 2018
- RENESAS ELECTRONICS CORPORATION
- Hisao INOMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Memory Devices
- Publication number 20170352767
- Publication date Dec 7, 2017
- LANCASTER UNIVERSITY BUSINESS ENTERPRISES LIMITED
- Manus Hayne
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
- Publication number 20170047437
- Publication date Feb 16, 2017
- RENESAS ELECTRONICS CORPORATION
- Tatsuo NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL
- Publication number 20160336432
- Publication date Nov 17, 2016
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20160118240
- Publication date Apr 28, 2016
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tsutomu Komatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160056245
- Publication date Feb 25, 2016
- Panasonic Intellectual Property Management Co., Ltd.
- YUSUKE KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES
- Publication number 20150340476
- Publication date Nov 26, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20150325677
- Publication date Nov 12, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
- Publication number 20150255582
- Publication date Sep 10, 2015
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
- Publication number 20150243758
- Publication date Aug 27, 2015
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
- Publication number 20150155372
- Publication date Jun 4, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...
- Publication number 20150137140
- Publication date May 21, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GaN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOU...
- Publication number 20150132900
- Publication date May 14, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS

with an active layer made of a group 13/15 material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three dimensional vertically structured electronic devices

Method of fabricating super-junction based vertical gallium nitride...

Regrowth uniformity in GaN vertical devices

Method of fabricating super-junction based vertical gallium nitride...

Gate trench power semiconductor devices having improved deep shield...

Three dimensional vertically structured electronic devices

Semiconductor component having a SiC semiconductor body

Super-junction based vertical gallium nitride JFET power devices

Heterojunction devices and methods for fabricating the same

Three dimensional vertically structured electronic devices

Three dimensional vertically structured electronic devices

Semiconductor component having a SiC semiconductor body and method...

Three dimensional vertically structured MISFET/MESFET

Heterojunction devices and methods for fabricating the same

Field-effect semiconductor device having a heterojunction contact

Trench vertical JFET with improved threshold voltage control

Electronic device using group III nitride semiconductor and its fab...

Electronic memory devices

Continuous crystalline gallium nitride (GaN) PN structure with no i...

Electronic device using group III nitride semiconductor and its fab...

Electronic device using group III nitride semiconductor and its fab...

Electronic device using group III nitride semiconductor and its fab...

Semiconductor device and manufacturing method thereof

Field-effect semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device and method for manufacturing same

InGaN ohmic source contacts for vertical power devices

Method and system for planar regrowth in GaN electronic devices

Method of fabricating a GaN P-i-N diode using implantation

Method for fabricating semiconductor device

Patents Applicationslast 30 patents

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...

Semiconductor Component Having A SiC Semiconductor Body

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...

METHOD AND SYSTEM FOR SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES

SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES

HETEROJUNCTION DEVICES AND METHODS FOR FABRICATING THE SAME

Semiconductor Component Having a SiC Semiconductor Body and Method...

Field-Effect Semiconductor Device Having a Heterojunction Contact

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Electronic Memory Devices

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...

VERTICAL GaN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOU...