with an active layer made of a group 13/15 material

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CPC
H01L29/6631

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/6631with an active layer made of a group 13/15 material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Methods of manufacture of advanced wafer bonded heterojunction bipo...
- Patent number 12,183,812
- Issue date Dec 31, 2024
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and manufacturing method of the same
- Patent number 12,142,672
- Issue date Nov 12, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and manufacturing methods thereof
- Patent number 12,094,958
- Issue date Sep 17, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible transistors with near-junction heat dissipation
- Patent number 11,996,473
- Issue date May 28, 2024
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and radio-frequency power amplifier module
- Patent number 11,978,786
- Issue date May 7, 2024
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure and transistor including the same
- Patent number 11,955,518
- Issue date Apr 9, 2024
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with segmented emitter contacts
- Patent number 11,923,442
- Issue date Mar 5, 2024
- Texas Instruments Incorporated
- Hiroshi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct growth of lateral III-V bipolar transistor on silicon substrate
- Patent number 11,916,130
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,817,493
- Issue date Nov 14, 2023
- Murata Manufacturing Co., Ltd.
- Mari Saji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a manufacturing method of semiconductor de...
- Patent number 11,810,970
- Issue date Nov 7, 2023
- Mitsubishi Electric Corporation
- Tatsuo Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor and method for manufacturing the...
- Patent number 11,798,995
- Issue date Oct 24, 2023
- Nippon Telegraph and Telephone Corporation
- Yuta Shiratori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency front end (RFFE) hetero-integration
- Patent number 11,749,746
- Issue date Sep 5, 2023
- QUALCOMM Incorporated
- Ranadeep Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,705,509
- Issue date Jul 18, 2023
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar junction transistor with all-around extrinsic base...
- Patent number 11,682,718
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of bipolar transistors with...
- Patent number 11,658,180
- Issue date May 23, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 11,621,678
- Issue date Apr 4, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-junction device
- Patent number 11,594,574
- Issue date Feb 28, 2023
- International Business Machines Corporation
- Glenn J. Martyna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a bipolar transistor with a vertical collector co...
- Patent number 11,575,020
- Issue date Feb 7, 2023
- Teledyne Scientific & Imaging, LLC
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,532,736
- Issue date Dec 20, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method for producing the same
- Patent number 11,508,835
- Issue date Nov 22, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for bipolar transistor stac...
- Patent number 11,488,950
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...
- Patent number 11,456,374
- Issue date Sep 27, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V lateral bipolar junction transistor on local facetted buried...
- Patent number 11,444,185
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V lateral bipolar junction transistor on local facetted buried...
- Patent number 11,437,502
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a bipolar transistor and bipolar transisto...
- Patent number 11,417,756
- Issue date Aug 16, 2022
- STMicroelectronics (Crolles 2) SAS
- Edoardo Brezza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metamorphic high electron mobility transistor-heterojunction bipola...
- Patent number 11,380,678
- Issue date Jul 5, 2022
- QUALCOMM Incorporated
- Ranadeep Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned collector heterojunction bipolar transistor (HBT)
- Patent number 11,355,617
- Issue date Jun 7, 2022
- QUALCOMM Incorporated
- Ranadeep Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low parasitic Ccb heterojunction bipolar transistor
- Patent number 11,355,618
- Issue date Jun 7, 2022
- Imec VZW
- Abhitosh Vais
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20240413227
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...
- Publication number 20240322002
- Publication date Sep 26, 2024
- North Carolina State University
- Spyridon Pavlidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...
- Publication number 20240304703
- Publication date Sep 12, 2024
- University of Southern California
- Ajey Poovannummoottil JACOB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure And Transistor Including The Same
- Publication number 20240204053
- Publication date Jun 20, 2024
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Chih-Hung YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-JUNCTION BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE...
- Publication number 20240194561
- Publication date Jun 13, 2024
- Nippon Telegraph and Telephone Corporation
- Yuta Shiratori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCH LNA MODULE
- Publication number 20240153957
- Publication date May 9, 2024
- X-FAB France SAS
- Ousmane SOW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240079470
- Publication date Mar 7, 2024
- Peking University
- Jin WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction Bipolar Transistor
- Publication number 20240030288
- Publication date Jan 25, 2024
- Nippon Telegraph and Telephone Corporation
- Manabu Mitsuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230387208
- Publication date Nov 30, 2023
- STMicroelectronics (Crolles 2) SAS
- Pascal CHEVALIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-Junction Bipolar Transistor and Method of Manufacturing the...
- Publication number 20230307518
- Publication date Sep 28, 2023
- Nippon Telegraph and Telephone Corporation
- Yuta Shiratori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES
- Publication number 20230178611
- Publication date Jun 8, 2023
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction Bipolar Transistor and Method of Manufacturing the Same
- Publication number 20230163193
- Publication date May 25, 2023
- Nippon Telegraph and Telephone Corporation
- Yuta Shiratori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY FRONT END (RFFE) HETERO-INTEGRATION
- Publication number 20220352359
- Publication date Nov 3, 2022
- QUALCOMM Incorporated
- Ranadeep DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LAS...
- Publication number 20220344476
- Publication date Oct 27, 2022
- KYOCERA SLD Laser, Inc.
- Philip Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES
- Publication number 20220320310
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURE OF ADVANCED WAFER BONDED HETEROJUNCTION BIPO...
- Publication number 20220278228
- Publication date Sep 1, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF
- Publication number 20220262933
- Publication date Aug 18, 2022
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF SEMICONDUCTOR DE...
- Publication number 20220254908
- Publication date Aug 11, 2022
- Mitsubishi Electric Corporation
- Tatsuo Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-Junction Bipolar Transistor and Method for Manufacturing the...
- Publication number 20220231130
- Publication date Jul 21, 2022
- Nippon Telegraph and Telephone Corporation
- Yuta Shiratori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction Bipolar Transistor and Manufacturing Method of the Same
- Publication number 20220208998
- Publication date Jun 30, 2022
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220181470
- Publication date Jun 9, 2022
- Murata Manufacturing Co., Ltd.
- Mari SAJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING THE SAME
- Publication number 20220130983
- Publication date Apr 28, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE
- Publication number 20220029004
- Publication date Jan 27, 2022
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A BIPOLAR TRANSISTOR WITH A VERTICAL COLLECTOR CO...
- Publication number 20210399115
- Publication date Dec 23, 2021
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A BIPOLAR TRANSISTOR AND BIPOLAR TRANSISTO...
- Publication number 20210273082
- Publication date Sep 2, 2021
- STMicroelectronics (Crolles 2) SAS
- Edoardo BREZZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT GROWTH OF LATERAL III-V BIPOLAR TRANSISTOR ON SILICON SUBSTRATE
- Publication number 20210249521
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure And Transistor Including The Same
- Publication number 20210242311
- Publication date Aug 5, 2021
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Chih-Hung YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING THE SAME
- Publication number 20210234026
- Publication date Jul 29, 2021
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH LATTICE STRUCTURE
- Publication number 20210202717
- Publication date Jul 1, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A PLURALITY OF BIPOLAR TRANSISTORS WITH...
- Publication number 20210183854
- Publication date Jun 17, 2021
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H03 - BASIC ELECTRONIC CIRCUITRY

with an active layer made of a group 13/15 material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of manufacture of advanced wafer bonded heterojunction bipo...

Heterojunction bipolar transistor and manufacturing method of the same

Semiconductor structures and manufacturing methods thereof

Flexible transistors with near-junction heat dissipation

Bipolar transistor and radio-frequency power amplifier module

Epitaxial structure and transistor including the same

Manufacturable thin film gallium and nitrogen containing devices

Manufacturable thin film gallium and nitrogen containing devices

Bipolar transistor with segmented emitter contacts

Direct growth of lateral III-V bipolar transistor on silicon substrate

Semiconductor device

Semiconductor device and a manufacturing method of semiconductor de...

Hetero-junction bipolar transistor and method for manufacturing the...

Radio frequency front end (RFFE) hetero-integration

Heterojunction bipolar transistor

Vertical bipolar junction transistor with all-around extrinsic base...

Semiconductor device having a plurality of bipolar transistors with...

Semiconductor device and power amplifier module

Piezo-junction device

Method of forming a bipolar transistor with a vertical collector co...

Semiconductor device

Bipolar transistor and method for producing the same

Integrated circuit structure and method for bipolar transistor stac...

Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...

III-V lateral bipolar junction transistor on local facetted buried...

III-V lateral bipolar junction transistor on local facetted buried...

Method for manufacturing a bipolar transistor and bipolar transisto...

Metamorphic high electron mobility transistor-heterojunction bipola...

Self-aligned collector heterojunction bipolar transistor (HBT)

Low parasitic Ccb heterojunction bipolar transistor

Patents Applicationslast 30 patents

BIPOLAR TRANSISTOR

HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...

METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...

Epitaxial Structure And Transistor Including The Same

HETERO-JUNCTION BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE...

SWITCH LNA MODULE

GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF

Heterojunction Bipolar Transistor

LATERAL BIPOLAR TRANSISTOR

Hetero-Junction Bipolar Transistor and Method of Manufacturing the...

MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES

Heterojunction Bipolar Transistor and Method of Manufacturing the Same

RADIO FREQUENCY FRONT END (RFFE) HETERO-INTEGRATION

MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LAS...

METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES

METHODS OF MANUFACTURE OF ADVANCED WAFER BONDED HETEROJUNCTION BIPO...

SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF SEMICONDUCTOR DE...

Hetero-Junction Bipolar Transistor and Method for Manufacturing the...

Heterojunction Bipolar Transistor and Manufacturing Method of the Same

SEMICONDUCTOR DEVICE

BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING THE SAME

BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE

METHOD OF FORMING A BIPOLAR TRANSISTOR WITH A VERTICAL COLLECTOR CO...

METHOD FOR MANUFACTURING A BIPOLAR TRANSISTOR AND BIPOLAR TRANSISTO...

DIRECT GROWTH OF LATERAL III-V BIPOLAR TRANSISTOR ON SILICON SUBSTRATE

Epitaxial Structure And Transistor Including The Same

BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING THE SAME

TRANSISTORS WITH LATTICE STRUCTURE

SEMICONDUCTOR DEVICE HAVING A PLURALITY OF BIPOLAR TRANSISTORS WITH...