with at least one ferroelectric layer

Industry

CPC
H01L29/516

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/516with at least one ferroelectric layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,973,119
- Issue date Apr 30, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including transistors and a method of manufactur...
- Patent number 11,973,142
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 11,973,123
- Issue date Apr 30, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-gate transistor and methods for forming the same
- Patent number 11,968,840
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Jie Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Negative capacitance transistor with external ferroelectric structure
- Patent number 11,961,897
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Hsing Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end active device, semiconductor device and semiconductor chip
- Patent number 11,963,365
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with interlayer insulation structure including...
- Patent number 11,955,529
- Issue date Apr 9, 2024
- SK hynix Inc.
- Won Tae Koo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,956,968
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,949,012
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Jong Ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors, transistors, memory devices, and methods...
- Patent number 11,950,429
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Sanghun Jeon
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,939
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
- Patent number 11,929,435
- Issue date Mar 12, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer electrode to improve performance of ferroelectric memor...
- Patent number 11,916,127
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer dielectric for metal-insulator-metal capacitor
- Patent number 11,916,099
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide interlayer structure for nFET and pFET
- Patent number 11,916,128
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Min Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method of manufacturing the same
- Patent number 11,908,918
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,901,451
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric structure for semiconductor devices
- Patent number 11,901,450
- Issue date Feb 13, 2024
- Taiwan Semicondutor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dipoles in semiconductor devices
- Patent number 11,894,461
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Pi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,895,846
- Issue date Feb 6, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell including polarization retention member(s) including an...
- Patent number 11,889,701
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. INC.
- Tarek Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,888,063
- Issue date Jan 30, 2024
- Samsung Electronics Co., Ltd.
- Weonhong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench plug hardmask for advanced integrated circuit structure fabr...
- Patent number 11,887,838
- Issue date Jan 30, 2024
- Intel Corporation
- Anthony St. Amour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated transistors having gate material passing through a pilla...
- Patent number 11,888,068
- Issue date Jan 30, 2024
- Micron Technology, Inc.
- Antonino Rigano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device, operating method of...
- Patent number 11,882,705
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145552
- Publication date May 2, 2024
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURAL ELEMENT WITH IMPROVED FERROELECTRIC POLARISATION SWITCHI...
- Publication number 20240145572
- Publication date May 2, 2024
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- David LEHNINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FORMATION
- Publication number 20240147731
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSERTING INHIBITION LAYER FOR INDUCING ANTIFERROELECTRICITY TO FER...
- Publication number 20240145571
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTORS WITH A HYBRID WELL
- Publication number 20240120420
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Stefan Dünkel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Transistors Having Gate Material Passing Through a Pilla...
- Publication number 20240113224
- Publication date Apr 4, 2024
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR A THREE-DIMENSIONAL MEMORY ARRAY OF THIN-FIL...
- Publication number 20240114689
- Publication date Apr 4, 2024
- Sunrise Memory Corporation
- Jie Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS
- Publication number 20240105860
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPE...
- Publication number 20240105811
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek Anil Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR
- Publication number 20240096389
- Publication date Mar 21, 2024
- KIOXIA Corporation
- Kunifumi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
- Publication number 20240088255
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Miin-Jang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240088256
- Publication date Mar 14, 2024
- Samsung Electronics Co., Ltd.
- Jinseong HEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE DIFFERENTIAL RESISTANCE DEVICE
- Publication number 20240079496
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- Kilsu JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...
- Publication number 20240079472
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SEMICONDUCTO...
- Publication number 20240072053
- Publication date Feb 29, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...
- Publication number 20240072151
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- Dukhyun CHOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED FERROELECTRIC MEMORY CELL
- Publication number 20240071455
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC RANDOM-ACCESS MEMORY CELL
- Publication number 20240064997
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRANSISTOR STRUCTURE
- Publication number 20240064993
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240064996
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Kiheun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240055517
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERR...
- Publication number 20240055519
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20240049472
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Kiheun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240047550
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ki Heun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240038578
- Publication date Feb 1, 2024
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS

with at least one ferroelectric layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Integrated circuit including transistors and a method of manufactur...

Ferroelectric devices including a single crystalline ferroelectric...

Tri-gate transistor and methods for forming the same

Negative capacitance transistor with external ferroelectric structure

Back-end active device, semiconductor device and semiconductor chip

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device with interlayer insulation structure including...

Heterogeneous metal line compositions for advanced integrated circu...

Memory device

Semiconductor device

Ferroelectric capacitors, transistors, memory devices, and methods...

Trench contact structures for advanced integrated circuit structure...

Semiconductor device having buried gate structure and method for fa...

Ferroelectric gate stack for band-to-band tunneling reduction

Multi-layer electrode to improve performance of ferroelectric memor...

Multilayer dielectric for metal-insulator-metal capacitor

Metal oxide interlayer structure for nFET and pFET

Electronic device and method of manufacturing the same

Method of fabricating semiconductor device

Ferroelectric structure for semiconductor devices

Dipoles in semiconductor devices

Double-gated ferroelectric field-effect transistor

Memory cell including polarization retention member(s) including an...

Semiconductor device

Trench plug hardmask for advanced integrated circuit structure fabr...

Integrated transistors having gate material passing through a pilla...

Three-dimensional semiconductor memory device, operating method of...

Fin patterning for advanced integrated circuit structure fabrication

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

STRUCTURAL ELEMENT WITH IMPROVED FERROELECTRIC POLARISATION SWITCHI...

SEMICONDUCTOR DEVICES AND METHODS OF FORMATION

INSERTING INHIBITION LAYER FOR INDUCING ANTIFERROELECTRICITY TO FER...

FERROELECTRIC FIELD-EFFECT TRANSISTORS WITH A HYBRID WELL

Integrated Transistors Having Gate Material Passing Through a Pilla...

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

FABRICATION METHOD FOR A THREE-DIMENSIONAL MEMORY ARRAY OF THIN-FIL...

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPE...

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

ELECTRONIC DEVICES AND METHODS OF MANUFACTURING THE SAME

NEGATIVE DIFFERENTIAL RESISTANCE DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SEMICONDUCTO...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...

EMBEDDED FERROELECTRIC MEMORY CELL

FERROELECTRIC RANDOM-ACCESS MEMORY CELL

METHOD OF FABRICATING TRANSISTOR STRUCTURE

SEMICONDUCTOR DEVICE

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERR...

FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICE

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...