with gate electrode comprising a layer which is used for its ferroelectric memory properties

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H01L27/11585

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/11585with gate electrode comprising a layer which is used for its ferroelectric memory properties

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory devices and methods of manufacturing thereof
- Patent number 11,647,637
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S-1T ferroelectric memory
- Patent number 11,640,839
- Issue date May 2, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,637,126
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,637,110
- Issue date Apr 25, 2023
- Samsung Electronics Co., Ltd.
- Jihye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 11,631,698
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, memory cells and semiconductor constructions
- Patent number 11,594,611
- Issue date Feb 28, 2023
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improper ferroelectric active and passive devices
- Patent number 11,581,417
- Issue date Feb 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,581,337
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neuromimetic network and related production method
- Patent number 11,551,749
- Issue date Jan 10, 2023
- UNIVERSITÉ PARIS-SACLAY
- Manuel Bibes
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thin film structure including dielectric material layer and electro...
- Patent number 11,532,722
- Issue date Dec 20, 2022
- Samsung Electronics Co., Ltd.
- Woojin Lee
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device with ferroelectricity
- Patent number 11,532,641
- Issue date Dec 20, 2022
- SK hynix Inc.
- In Ku Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 11,527,552
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,527,553
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor device and method of manufacturing the...
- Patent number 11,515,419
- Issue date Nov 29, 2022
- SK hynix Inc.
- Hyangkeun Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and method for forming the same
- Patent number 11,508,754
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of three-dimensional structure including ferro...
- Patent number 11,488,979
- Issue date Nov 1, 2022
- SK hynix Inc.
- Jae Gil Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate oxide based tunnel feFET memory
- Patent number 11,488,978
- Issue date Nov 1, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming electronic devices using materials removable at...
- Patent number 11,476,268
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Chandra S. Tiwari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,469,310
- Issue date Oct 11, 2022
- SK Hynix Inc.
- Wan Joo Maeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multibit ferroelectric memory cells and methods for forming the same
- Patent number 11,450,687
- Issue date Sep 20, 2022
- SanDisk Technologies LLC
- Roshan Tirukkonda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field-effect transistor (FeFET) memory
- Patent number 11,450,370
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density 3D FERAM
- Patent number 11,450,686
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device
- Patent number 11,437,403
- Issue date Sep 6, 2022
- Kioxia Corporation
- Keiko Sakuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including a floating gate electrode and a layer of ferroelec...
- Patent number 11,424,253
- Issue date Aug 23, 2022
- NaMLab gGmbH
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having memory device and method of forming...
- Patent number 11,411,011
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays
- Patent number 11,404,440
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory array word line routing
- Patent number 11,404,091
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device having ferroelectric induction layer an...
- Patent number 11,393,846
- Issue date Jul 19, 2022
- SK hynix Inc.
- Hyangkeun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile ferroelectric memory and method of preparing the same
- Patent number 11,348,943
- Issue date May 31, 2022
- Fudan University
- Anquan Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,342,345
- Issue date May 24, 2022
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL AND METHODS THEREOF
- Publication number 20230223066
- Publication date Jul 13, 2023
- Ferroelectric Memory GmbH
- Stefan Ferdinand Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Device
- Publication number 20230200078
- Publication date Jun 22, 2023
- IMEC vzw
- Mihaela Ioana Popovici
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IN-SITU THERMAL ANNEALING OF ELECTRODE TO FORM SEED LAYER FOR IMPRO...
- Publication number 20230143625
- Publication date May 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20230106147
- Publication date Apr 6, 2023
- SK HYNIX INC.
- Hyangkeun YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230106816
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR MEMORY STRUCTURE
- Publication number 20230083447
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER AND ELECTRO...
- Publication number 20230074895
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Woojin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...
- Publication number 20230074522
- Publication date Mar 9, 2023
- SK HYNIX INC.
- In Ku KANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING ELECTRONIC DEVICES USING MATERIALS REMOVABLE AT...
- Publication number 20230061820
- Publication date Mar 2, 2023
- Micron Technology, Inc.
- Chandra S. Tiwari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
- Publication number 20230049651
- Publication date Feb 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Ferroelectric Transistors and Methods...
- Publication number 20230041784
- Publication date Feb 9, 2023
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
LAYER STRUCTURE INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURIN...
- Publication number 20230009791
- Publication date Jan 12, 2023
- Samsung Electronics Co., Ltd.
- Yunseong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE STORAGE DEVICE, NON-VOLATILE STORAGE ELEMENT, AND MANU...
- Publication number 20230012093
- Publication date Jan 12, 2023
- TOKYO INSTITUTE OF TECHNOLOGY
- Kuniyuki KAKUSHIMA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220416055
- Publication date Dec 29, 2022
- SK HYNIX INC.
- Wan Joo MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20220366956
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING MEMORY DEVICE AND METHOD OF FORMING...
- Publication number 20220359548
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH DENSITY 3D FERAM
- Publication number 20220352208
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays
- Publication number 20220320136
- Publication date Oct 6, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory Array Word Line Routing
- Publication number 20220310132
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconducting Ferroelectric Device
- Publication number 20220293766
- Publication date Sep 15, 2022
- Cerfe Labs, Inc.
- Lucian Shifren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Structures And Method Of Forming The Same
- Publication number 20220278127
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220254796
- Publication date Aug 11, 2022
- SK HYNIX INC.
- Hwang Yeon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220241884
- Publication date Aug 4, 2022
- Samsung Electronics Co., Ltd.
- Jinseong HEO
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN...
- Publication number 20220238539
- Publication date Jul 28, 2022
- Samsung Electronics Co., Ltd.
- Byounghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220149056
- Publication date May 12, 2022
- Samsung Electronics Co., Ltd.
- Jihye KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICES ENHANCED WITH INTERFACE SWITCHING MODULATION
- Publication number 20220140146
- Publication date May 5, 2022
- Applied Materials, Inc.
- Milan Pesic
- G11 - INFORMATION STORAGE
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20220139959
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Application
1S-1T FERROELECTRIC MEMORY
- Publication number 20220130443
- Publication date Apr 28, 2022
- Intel Corporation
- Abhishek A. SHARMA
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-METAL LATERAL LAYER DEVICES WITH INTERNAL BIAS GENERATION
- Publication number 20220069131
- Publication date Mar 3, 2022
- Applied Materials, Inc.
- Milan Pesic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY
- Publication number 20210398580
- Publication date Dec 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE

with gate electrode comprising a layer which is used for its ferroelectric memory properties

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory devices and methods of manufacturing thereof

1S-1T ferroelectric memory

Memory device and method of forming the same

Semiconductor device

Three-dimensional memory device with ferroelectric material

Transistors, memory cells and semiconductor constructions

Improper ferroelectric active and passive devices

Three-dimensional memory device and manufacturing method thereof

Neuromimetic network and related production method

Thin film structure including dielectric material layer and electro...

Semiconductor device with ferroelectricity

Ferroelectric memory device and method of forming the same

Three-dimensional memory device and method

Ferroelectric semiconductor device and method of manufacturing the...

Semiconductor memory structure and method for forming the same

Semiconductor device of three-dimensional structure including ferro...

Ferroelectric gate oxide based tunnel feFET memory

Methods of forming electronic devices using materials removable at...

Semiconductor device

Multibit ferroelectric memory cells and methods for forming the same

Ferroelectric field-effect transistor (FeFET) memory

High density 3D FERAM

Ferroelectric memory device

Device including a floating gate electrode and a layer of ferroelec...

Semiconductor structure having memory device and method of forming...

Memory arrays

Memory array word line routing

Ferroelectric memory device having ferroelectric induction layer an...

Non-volatile ferroelectric memory and method of preparing the same

Electronic device and method for fabricating the same

Patents Applicationslast 30 patents

MEMORY CELL AND METHODS THEREOF

Ferroelectric Device

IN-SITU THERMAL ANNEALING OF ELECTRODE TO FORM SEED LAYER FOR IMPRO...

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR FORMING SEMICONDUCTOR MEMORY STRUCTURE

THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER AND ELECTRO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR...

METHODS OF FORMING ELECTRONIC DEVICES USING MATERIALS REMOVABLE AT...

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

Integrated Assemblies Having Ferroelectric Transistors and Methods...

LAYER STRUCTURE INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURIN...

NON-VOLATILE STORAGE DEVICE, NON-VOLATILE STORAGE ELEMENT, AND MANU...

SEMICONDUCTOR DEVICE

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

SEMICONDUCTOR STRUCTURE HAVING MEMORY DEVICE AND METHOD OF FORMING...

HIGH DENSITY 3D FERAM

Memory Arrays

Memory Array Word Line Routing

Semiconducting Ferroelectric Device

Semiconductor Memory Structures And Method Of Forming The Same

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

LOGIC SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN...

SEMICONDUCTOR DEVICE

FERROELECTRIC DEVICES ENHANCED WITH INTERFACE SWITCHING MODULATION

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

1S-1T FERROELECTRIC MEMORY

MULTI-METAL LATERAL LAYER DEVICES WITH INTERNAL BIAS GENERATION

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY