with main current going through the whole silicon substrate

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H01L29/66295

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66295with main current going through the whole silicon substrate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Isolation in a semiconductor device
- Patent number 11,728,424
- Issue date Aug 15, 2023
- Semiconductor Components Industries, LLC
- Takashi Noma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating silicon-BJT to a silicon-germanium-HBT manufacturing pr...
- Patent number 10,784,257
- Issue date Sep 22, 2020
- NXP B.V.
- Petrus Hubertus Cornelis Magnee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,411,110
- Issue date Sep 10, 2019
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacture thereof
- Patent number 10,340,342
- Issue date Jul 2, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- JianXiang Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operation of double-base bipolar transistors with additional timing...
- Patent number 10,211,283
- Issue date Feb 19, 2019
- Ideal Power Inc.
- William C. Alexander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 10,121,871
- Issue date Nov 6, 2018
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor device
- Patent number 10,043,884
- Issue date Aug 7, 2018
- Renesas Electronics Corporation
- Toshikazu Hanawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched and implanted bipolar junction transistor
- Patent number 9,917,180
- Issue date Mar 13, 2018
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor device
- Patent number 9,761,685
- Issue date Sep 12, 2017
- Renesas Electronics Corporation
- Toshikazu Hanawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate power semiconductor field effect transistor
- Patent number 9,755,043
- Issue date Sep 5, 2017
- Xianda Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latch-up free power transistor
- Patent number 9,722,059
- Issue date Aug 1, 2017
- Infineon Technologies AG
- Alim Karmous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional bipolar transistors with two-surface cellular geometries
- Patent number 9,679,999
- Issue date Jun 13, 2017
- IDEAL POWER, INC.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multilayer contact and method of manufact...
- Patent number 9,331,186
- Issue date May 3, 2016
- NXP B.V.
- Soenke Habenicht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 9,293,569
- Issue date Mar 22, 2016
- X-Fab Semiconductor Foundries AG.
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device
- Patent number 8,871,573
- Issue date Oct 28, 2014
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 8,866,264
- Issue date Oct 21, 2014
- Kabushiki Kaisha Toshiba
- Masahiko Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a low ohmic current path
- Patent number 8,860,126
- Issue date Oct 14, 2014
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 8,404,557
- Issue date Mar 26, 2013
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with emitter contact holes in a first layer no...
- Patent number 7,880,271
- Issue date Feb 1, 2011
- Sanyo Electric Co., LTD
- Kazuya Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust ESD cell
- Patent number 7,656,009
- Issue date Feb 2, 2010
- Analog Devices, Inc.
- Moshe Gerstenhaber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device having high breakdown voltage and...
- Patent number 7,129,542
- Issue date Oct 31, 2006
- Fairchild Korea Semiconductor LTD
- Chan-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power component manufacturing method
- Patent number 6,784,465
- Issue date Aug 31, 2004
- STMicroelectronics S.A.
- Mathieu Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power component manufacturing method
- Patent number 6,579,782
- Issue date Jun 17, 2003
- STMicroelectronics S.A.
- Mathieu Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switch devices having a region with three distinct zo...
- Patent number 6,355,971
- Issue date Mar 12, 2002
- U.S. Philips Corporation
- Holger Schligtenhorst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device using semi-insulating polycrystalline si...
- Patent number 6,346,444
- Issue date Feb 12, 2002
- Fairchild Korea Semiconductor, Ltd.
- Chan-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device using semi-insulating polycrystalline si...
- Patent number 6,281,548
- Issue date Aug 28, 2001
- Fairchild Korea Semiconductor Ltd.
- Chan-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar power transistors and manufacturing method
- Patent number 6,198,156
- Issue date Mar 6, 2001
- Telefonaktiebolaget LM Ericsson (publ)
- Ted Johansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating bipolar junction transistors having an incre...
- Patent number 6,114,212
- Issue date Sep 5, 2000
- Samsung Electronics Co., Ltd.
- Sang-yong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 6,093,955
- Issue date Jul 25, 2000
- David A. Garnham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating power semiconductor device using semi-insulat...
- Patent number 6,040,219
- Issue date Mar 21, 2000
- Samsung Electronics Co., Ltd.
- Chan-ho Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION IN A SEMICONDUCTOR DEVICE
- Publication number 20220131002
- Publication date Apr 28, 2022
- Semiconductor Components Industries, LLC
- Takashi NOMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING SILICON-BJT TO A SILICON-GERMANIUM-HBT MANUFACTURING PR...
- Publication number 20200075585
- Publication date Mar 5, 2020
- NXP B.V.
- Petrus Hubertus Cornelis Magnee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20170338324
- Publication date Nov 23, 2017
- RENESAS ELECTRONICS CORPORATION
- Toshikazu HANAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20170053995
- Publication date Feb 23, 2017
- RENESAS ELECTRONICS CORPORATION
- Toshikazu HANAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor
- Publication number 20140042592
- Publication date Feb 13, 2014
- X-FAB SEMICONDUCTOR FOUNDRIES AG.
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Low Ohmic Current Path
- Publication number 20130175609
- Publication date Jul 11, 2013
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130134564
- Publication date May 30, 2013
- Masahiko KUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Semiconductor Device
- Publication number 20120289003
- Publication date Nov 15, 2012
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Semiconductor Device and a Semiconductor Device
- Publication number 20120264259
- Publication date Oct 18, 2012
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACT...
- Publication number 20120248575
- Publication date Oct 4, 2012
- NXP B.V.
- Soenke Habenicht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20110169015
- Publication date Jul 14, 2011
- Honda Motor Co., Ltd.
- Yuki Negoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100052102
- Publication date Mar 4, 2010
- SANYO ELECTRIC CO., LTD.
- Kazuya TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming bipolar transistors by silicide through contact...
- Publication number 20090057774
- Publication date Mar 5, 2009
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST ESD CELL
- Publication number 20080246115
- Publication date Oct 9, 2008
- Moshe Gerstenhaber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming bipolar transistors by silicide through contact...
- Publication number 20070298576
- Publication date Dec 27, 2007
- Kelin J. Kuhn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage semiconductor device having high breakdown voltage and...
- Publication number 20040094800
- Publication date May 20, 2004
- Fairchild Korea Semiconductor Ltd.
- Chan-Ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power component manufacturing method
- Publication number 20030219964
- Publication date Nov 27, 2003
- STMicroelectronics S.A.
- Mathieu Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and manufacturing method therefor
- Publication number 20030030126
- Publication date Feb 13, 2003
- Mitsubishi Heavy Industries, Ltd.
- Fumihiko Hirose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage semiconductor device having high breakdown voltage and...
- Publication number 20020130362
- Publication date Sep 19, 2002
- Chan-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High frequency transistor device
- Publication number 20020014650
- Publication date Feb 7, 2002
- Hirotoshi Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCH DEVICES HAVING A REGION WITH THREE DISTINCT ZO...
- Publication number 20010054747
- Publication date Dec 27, 2001
- HOLGER SCHLIGTENHORST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power component manufacturing method
- Publication number 20010011717
- Publication date Aug 9, 2001
- Roy Mathieu
- H01 - BASIC ELECTRIC ELEMENTS

with main current going through the whole silicon substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Isolation in a semiconductor device

Integrating silicon-BJT to a silicon-germanium-HBT manufacturing pr...

Semiconductor structure and manufacturing method thereof

Semiconductor device and manufacture thereof

Operation of double-base bipolar transistors with additional timing...

Semiconductor device and method for manufacturing semiconductor device

Manufacturing method for semiconductor device

Trenched and implanted bipolar junction transistor

Manufacturing method for semiconductor device

Trench gate power semiconductor field effect transistor

Latch-up free power transistor

Bidirectional bipolar transistors with two-surface cellular geometries

Semiconductor device with multilayer contact and method of manufact...

Bipolar transistor

Method for forming a semiconductor device

Semiconductor device and manufacturing method of the same

Semiconductor device with a low ohmic current path

Method for forming a semiconductor device and a semiconductor device

Semiconductor device with emitter contact holes in a first layer no...

Robust ESD cell

High voltage semiconductor device having high breakdown voltage and...

Vertical power component manufacturing method

Vertical power component manufacturing method

Semiconductor switch devices having a region with three distinct zo...

Power semiconductor device using semi-insulating polycrystalline si...

Power semiconductor device using semi-insulating polycrystalline si...

Bipolar power transistors and manufacturing method

Methods of fabricating bipolar junction transistors having an incre...

Power semiconductor device

Method of fabricating power semiconductor device using semi-insulat...

Patents Applicationslast 30 patents

ISOLATION IN A SEMICONDUCTOR DEVICE

INTEGRATING SILICON-BJT TO A SILICON-GERMANIUM-HBT MANUFACTURING PR...

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

Bipolar transistor

Semiconductor Device with a Low Ohmic Current Path

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Method for Forming a Semiconductor Device

Method for Forming a Semiconductor Device and a Semiconductor Device

SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACT...

BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE

Methods of forming bipolar transistors by silicide through contact...

ROBUST ESD CELL

Methods of forming bipolar transistors by silicide through contact...

High voltage semiconductor device having high breakdown voltage and...

Vertical power component manufacturing method

Bipolar transistor and manufacturing method therefor

High voltage semiconductor device having high breakdown voltage and...

High frequency transistor device

SEMICONDUCTOR SWITCH DEVICES HAVING A REGION WITH THREE DISTINCT ZO...

Vertical power component manufacturing method