with more than one donor layer

Industry

CPC
H01L29/7785

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7785with more than one donor layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
N-polar III-nitride device structures with a p-type layer
- Patent number 11,699,723
- Issue date Jul 11, 2023
- MONDE WIRELESS INC.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of forming the same
- Patent number 11,616,135
- Issue date Mar 28, 2023
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 11,588,046
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Dongchul Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Column IV transistors for PMOS integration
- Patent number 11,508,813
- Issue date Nov 22, 2022
- Daedalus Prime LLC
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure for high-electron-mobility transistor and metho...
- Patent number 11,508,837
- Issue date Nov 22, 2022
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Yutao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with high concentration of germanium
- Patent number 11,387,320
- Issue date Jul 12, 2022
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source to channel junction for III-V metal-oxide-semiconductor fiel...
- Patent number 11,335,796
- Issue date May 17, 2022
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,316,039
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 11,152,210
- Issue date Oct 19, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 11,121,216
- Issue date Sep 14, 2021
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a group iii-v semiconductor layer co...
- Patent number 11,081,346
- Issue date Aug 3, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,031,399
- Issue date Jun 8, 2021
- Sony Corporation
- Masahiro Mitsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital alloy based back barrier for P-channel nitride transistors
- Patent number 10,943,998
- Issue date Mar 9, 2021
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal substrate, infrared detector, and method for...
- Patent number 10,937,647
- Issue date Mar 2, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,910,489
- Issue date Feb 2, 2021
- Kabushiki Kaisha Toshiba
- Masaaki Onomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming high electron mobility transistor (HEMT) and HEM...
- Patent number 10,896,970
- Issue date Jan 19, 2021
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode saddle gate device
- Patent number 10,879,382
- Issue date Dec 29, 2020
- Northrop Grumman Systems Corporation
- Josephine Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective germanium P-contact metalization through trench
- Patent number 10,879,353
- Issue date Dec 29, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a III-N semiconductor structure
- Patent number 10,818,491
- Issue date Oct 27, 2020
- Imec VZW
- Ming Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices having source/drain structure configured with hi...
- Patent number 10,811,496
- Issue date Oct 20, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power compound semiconductor field effect transistor devices w...
- Patent number 10,756,206
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,727,328
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High bandgap Schottky contact layer device
- Patent number 10,720,428
- Issue date Jul 21, 2020
- Qorvo US, Inc.
- Corey A. Nevers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming high electron mobility transistor (HEMT) and HEM...
- Patent number 10,686,053
- Issue date Jun 16, 2020
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor with a non-uniform 2DEG
- Patent number 10,680,092
- Issue date Jun 9, 2020
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked multichannel pyramid transistor
- Patent number 10,658,501
- Issue date May 19, 2020
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor structure with a bandgap graded h...
- Patent number 10,651,298
- Issue date May 12, 2020
- Visual Photonics Epitaxy Co., Ltd.
- Yu-Chung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital alloy based back barrier for P-channel nitride transistors
- Patent number 10,651,306
- Issue date May 12, 2020
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,629,598
- Issue date Apr 21, 2020
- Sony Corporation
- Masahiro Mitsunaga
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
P-GaN HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20230378337
- Publication date Nov 23, 2023
- NATIONAL SUN YAT-SEN UNIVERSITY
- TING-CHANG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE
- Publication number 20230317796
- Publication date Oct 5, 2023
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRINGE-GATED CASTELLATED FET
- Publication number 20230307533
- Publication date Sep 28, 2023
- Northrop Grumman Systems Corporation
- Kevin M. Frey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES
- Publication number 20230299146
- Publication date Sep 21, 2023
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...
- Publication number 20230197840
- Publication date Jun 22, 2023
- Intel Corporation
- Sanyam Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE
- Publication number 20230178643
- Publication date Jun 8, 2023
- Industrial Technology Research Institute
- Shih-Chin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHO...
- Publication number 20230104038
- Publication date Apr 6, 2023
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- BOTING LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220416068
- Publication date Dec 29, 2022
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220406924
- Publication date Dec 22, 2022
- Sumitomo Electric Industries, Ltd.
- Kenta SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220376053
- Publication date Nov 24, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- KING YUEN WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HOLE DRAINING STRUCTURE FOR SUPPRESSION OF HOLE ACCUMULATION
- Publication number 20220359739
- Publication date Nov 10, 2022
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE STRUCTURE
- Publication number 20220344474
- Publication date Oct 27, 2022
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES
- Publication number 20220320326
- Publication date Oct 6, 2022
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20220310833
- Publication date Sep 29, 2022
- Samsung Electronics Co., Ltd.
- Dongchul SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...
- Publication number 20220271125
- Publication date Aug 25, 2022
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20220029007
- Publication date Jan 27, 2022
- Vanguard International Semiconductor Corporation
- Chih-Yen CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS
- Publication number 20210399119
- Publication date Dec 23, 2021
- Intel Corporation
- Suresh VISHWANATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...
- Publication number 20210343525
- Publication date Nov 4, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-TRAPPING LAYERS FOR III-V SEMICONDUCTOR DEVICES
- Publication number 20210280703
- Publication date Sep 9, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Bartlomiej J. Pawlak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210249528
- Publication date Aug 12, 2021
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...
- Publication number 20210167188
- Publication date Jun 3, 2021
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...
- Publication number 20210143009
- Publication date May 13, 2021
- Fujitsu Limited
- Shigekazu Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor devices having source/drain structure configured with hi...
- Publication number 20210005712
- Publication date Jan 7, 2021
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE SADDLE GATE DEVICE
- Publication number 20200411676
- Publication date Dec 31, 2020
- Northrop Grumman Systems Corporation
- Josephine Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200357908
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsin WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHO...
- Publication number 20200350426
- Publication date Nov 5, 2020
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- YUTAO FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...
- Publication number 20200312982
- Publication date Oct 1, 2020
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE TO CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIEL...
- Publication number 20200287036
- Publication date Sep 10, 2020
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200287035
- Publication date Sep 10, 2020
- KABUSHIKI KAISHA TOSHIBA
- Masaaki ONOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC CIRCUIT WITH INDIUM NITRIDE QUANTUM WELL
- Publication number 20200266190
- Publication date Aug 20, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS

with more than one donor layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

N-polar III-nitride device structures with a p-type layer

Logic circuit with indium nitride quantum well

High electron mobility transistor and method of forming the same

High electron mobility transistor

Column IV transistors for PMOS integration

Epitaxial structure for high-electron-mobility transistor and metho...

Transistors with high concentration of germanium

Source to channel junction for III-V metal-oxide-semiconductor fiel...

Method for manufacturing semiconductor device

Semiconductor crystal substrate, infrared detector, and method for...

III-nitride devices including a graded depleting layer

Semiconductor structure having a group iii-v semiconductor layer co...

Semiconductor device and manufacturing method of the same

Digital alloy based back barrier for P-channel nitride transistors

Semiconductor crystal substrate, infrared detector, and method for...

Semiconductor device

Process of forming high electron mobility transistor (HEMT) and HEM...

Enhancement mode saddle gate device

Selective germanium P-contact metalization through trench

Formation of a III-N semiconductor structure

Transistor devices having source/drain structure configured with hi...

High power compound semiconductor field effect transistor devices w...

Semiconductor device and manufacturing method thereof

High bandgap Schottky contact layer device

Process of forming high electron mobility transistor (HEMT) and HEM...

Electronic device including a transistor with a non-uniform 2DEG

Vertically stacked multichannel pyramid transistor

Heterojunction bipolar transistor structure with a bandgap graded h...

Digital alloy based back barrier for P-channel nitride transistors

Semiconductor device and manufacturing method of the same

Patents Applicationslast 30 patents

P-GaN HIGH-ELECTRON-MOBILITY TRANSISTOR

NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE

FRINGE-GATED CASTELLATED FET

SEMICONDUCTOR STRUCTURES

GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE

EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHO...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HOLE DRAINING STRUCTURE FOR SUPPRESSION OF HOLE ACCUMULATION

SUPERLATTICE STRUCTURE

SEMICONDUCTOR STRUCTURES

HIGH ELECTRON MOBILITY TRANSISTOR

TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...

SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE

TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS

SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...

CHARGE-TRAPPING LAYERS FOR III-V SEMICONDUCTOR DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME

PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...

SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTOR, AND METHOD FOR...

Transistor devices having source/drain structure configured with hi...

ENHANCEMENT MODE SADDLE GATE DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHO...

PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...

SOURCE TO CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIEL...

SEMICONDUCTOR DEVICE

LOGIC CIRCUIT WITH INDIUM NITRIDE QUANTUM WELL