with PN junction gate

Industry

CPC
H01L29/1058

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1058with PN junction gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Transient-voltage-suppression protection device, manufacturing proc...
- Patent number 11,990,505
- Issue date May 21, 2024
- WILL SEMICONDUCTOR CO., LTD.SHANGHAI
- Fusheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,461
- Issue date Mar 5, 2024
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,869,982
- Issue date Jan 9, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide junction field effect transistors
- Patent number 11,824,094
- Issue date Nov 21, 2023
- Power Integrations, Inc.
- Kuo-Chang Robert Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having multiple barrier patterns
- Patent number 11,610,975
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Jongho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,557,647
- Issue date Jan 17, 2023
- Nissan Motor Co., Ltd.
- Toshiharu Marui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor on silicon-on-insulator substrate
- Patent number 11,557,662
- Issue date Jan 17, 2023
- Texas Instruments Incorporated
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,545,585
- Issue date Jan 3, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 11,495,694
- Issue date Nov 8, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,355,589
- Issue date Jun 7, 2022
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amplifier having switch and switch control processor controlling sw...
- Patent number 11,227,930
- Issue date Jan 18, 2022
- Samsung Electronics Co., Ltd.
- Sangmin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amplifier having switch and switch control processor controlling sw...
- Patent number 11,201,226
- Issue date Dec 14, 2021
- Samsung Electronics Co., Ltd.
- Sangmin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having multiple barrier patterns
- Patent number 11,145,738
- Issue date Oct 12, 2021
- Samsung Electronics Co., Ltd.
- Jongho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic gate cell structure
- Patent number 11,069,678
- Issue date Jul 20, 2021
- Qorvo US, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 11,011,513
- Issue date May 18, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical JFET with regrown channel and dielectric gate
- Patent number 10,971,587
- Issue date Apr 6, 2021
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high voltage field effect transistor and...
- Patent number 10,784,372
- Issue date Sep 22, 2020
- MagnaChip Semiconductor, Ltd.
- Young Bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for manufacturing the same
- Patent number 10,700,190
- Issue date Jun 30, 2020
- Vanguard International Semiconductor Corporation
- Chia-Hao Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,559,701
- Issue date Feb 11, 2020
- Hyundai Motor Company
- Dae Hwan Chun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical JFET with regrown channel and dielectric gate
- Patent number 10,535,741
- Issue date Jan 14, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,522,663
- Issue date Dec 31, 2019
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a junction field effect transistor into a vertical fiel...
- Patent number 10,504,889
- Issue date Dec 10, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar multi-implanted JFET
- Patent number 10,446,695
- Issue date Oct 15, 2019
- United Silicone Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with improved threshold voltage control
- Patent number 10,396,215
- Issue date Aug 27, 2019
- United Silicon Carbide, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional bipolar-mode JFET driver circuitry
- Patent number 10,374,070
- Issue date Aug 6, 2019
- John Wood
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Monolithically integrated semiconductor switch, in particular a pow...
- Patent number 10,325,984
- Issue date Jun 18, 2019
- Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Andreas Huerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gallium nitride JFET with controlled doping profile
- Patent number 10,312,378
- Issue date Jun 4, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage breakdown tapered vertical conduction junction transistor
- Patent number 10,276,667
- Issue date Apr 30, 2019
- Silanna Asia Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Four terminal stacked complementary junction field effect transistors
- Patent number 10,230,005
- Issue date Mar 12, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET and method for fabricating the same
- Patent number 10,181,512
- Issue date Jan 15, 2019
- Vanguard International Semiconductor Corporation
- Wen-Hsin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION STRUCTURE WITH VARYING LAYER COMPOSITION
- Publication number 20240387718
- Publication date Nov 21, 2024
- GAN SYSTEMS INC.
- Claudio Andres Canizares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240332430
- Publication date Oct 3, 2024
- Rohm Co., Ltd.
- Yuji KOGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055511
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055512
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055514
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055513
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING UNIFORMLY DOPED DEEP IMPLANTED REGIONS IN SILICO...
- Publication number 20230420575
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION
- Publication number 20230261117
- Publication date Aug 17, 2023
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS
- Publication number 20230147746
- Publication date May 11, 2023
- Power Integrations, Inc.
- Kuo-Chang Robert YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20230106300
- Publication date Apr 6, 2023
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230098516
- Publication date Mar 30, 2023
- Monolithic Power Systems, Inc.
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230047121
- Publication date Feb 16, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230042174
- Publication date Feb 9, 2023
- DENSO CORPORATION
- Kenji KOUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSIENT-VOLTAGE-SUPPRESSION PROTECTION DEVICE, MANUFACTURING PROC...
- Publication number 20220344454
- Publication date Oct 27, 2022
- WILL SEMICONDUCTOR CO.,LTD.SHANGHAI
- Fusheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220190152
- Publication date Jun 16, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEYUKI OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR ON SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20220140116
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220085200
- Publication date Mar 17, 2022
- Sumitomo Electric Industries, Ltd.
- Shigeki YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single Sided Channel Mesa Power Junction Field Effect Transistor
- Publication number 20220059706
- Publication date Feb 24, 2022
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20220013671
- Publication date Jan 13, 2022
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING MULTIPLE BARRIER PATTERNS
- Publication number 20210408260
- Publication date Dec 30, 2021
- Samsung Electronics Co., Ltd.
- Jongho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210313475
- Publication date Oct 7, 2021
- DENSO CORPORATION
- Kenji KONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210167166
- Publication date Jun 3, 2021
- NISSAN MOTOR CO., LTD.
- Toshiharu MARUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING MULTIPLE BARRIER PATTERNS
- Publication number 20210028291
- Publication date Jan 28, 2021
- Samsung Electronics Co., Ltd.
- Jongho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with an Edge Termination Structure
- Publication number 20200335579
- Publication date Oct 22, 2020
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFIER HAVING SWITCH AND SWITCH CONTROL PROCESSOR CONTROLLING SW...
- Publication number 20200243661
- Publication date Jul 30, 2020
- Samsung Electronics Co., Ltd.
- Sangmin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20200212207
- Publication date Jul 2, 2020
- RICHTEK TECHNOLOGY CORPORATION
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate
- Publication number 20200111878
- Publication date Apr 9, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200098935
- Publication date Mar 26, 2020
- DENSO CORPORATION
- Kenji KONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...
- Publication number 20200066711
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20190229209
- Publication date Jul 25, 2019
- Vanguard International Semiconductor Corporation
- Chia-Hao LEE
- H01 - BASIC ELECTRIC ELEMENTS

with PN junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Transient-voltage-suppression protection device, manufacturing proc...

Semiconductor device

Single sided channel mesa power junction field effect transistor

Silicon carbide junction field effect transistors

Semiconductor devices having multiple barrier patterns

Semiconductor device and manufacturing method thereof

Junction field effect transistor on silicon-on-insulator substrate

Single sided channel mesa power junction field effect transistor

GaN vertical-channel junction field-effect transistors with regrown...

Semiconductor device

Amplifier having switch and switch control processor controlling sw...

Amplifier having switch and switch control processor controlling sw...

Semiconductor devices having multiple barrier patterns

Logic gate cell structure

Integrating a junction field effect transistor into a vertical fiel...

GaN lateral vertical JFET with regrown channel and dielectric gate

Semiconductor device with high voltage field effect transistor and...

Semiconductor devices and methods for manufacturing the same

Semiconductor device and method of manufacturing the same

GaN lateral vertical JFET with regrown channel and dielectric gate

Integrated JFET structure with implanted backgate

Integrating a junction field effect transistor into a vertical fiel...

Planar multi-implanted JFET

Trench vertical JFET with improved threshold voltage control

Bidirectional bipolar-mode JFET driver circuitry

Monolithically integrated semiconductor switch, in particular a pow...

Lateral gallium nitride JFET with controlled doping profile

High voltage breakdown tapered vertical conduction junction transistor

Four terminal stacked complementary junction field effect transistors

JFET and method for fabricating the same

Patents Applicationslast 30 patents

HETEROJUNCTION STRUCTURE WITH VARYING LAYER COMPOSITION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

METHODS OF FORMING UNIFORMLY DOPED DEEP IMPLANTED REGIONS IN SILICO...

TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION

SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

TRANSIENT-VOLTAGE-SUPPRESSION PROTECTION DEVICE, MANUFACTURING PROC...

SEMICONDUCTOR DEVICE

JUNCTION FIELD EFFECT TRANSISTOR ON SILICON-ON-INSULATOR SUBSTRATE

SEMICONDUCTOR DEVICE

Single Sided Channel Mesa Power Junction Field Effect Transistor

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

SEMICONDUCTOR DEVICES HAVING MULTIPLE BARRIER PATTERNS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES HAVING MULTIPLE BARRIER PATTERNS

Semiconductor Device with an Edge Termination Structure

AMPLIFIER HAVING SWITCH AND SWITCH CONTROL PROCESSOR CONTROLLING SW...

MANUFACTURING METHOD OF JUNCTION FIELD EFFECT TRANSISTOR

GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate

SEMICONDUCTOR DEVICE

INTEGRATING A JUNCTION FIELD EFFECT TRANSISTOR INTO A VERTICAL FIEL...

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME