with Schottky drain or source contact

Industry

CPC
H01L29/806

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/806with Schottky drain or source contact

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for preparing semiconductor device with contact structure
- Patent number 11,935,834
- Issue date Mar 19, 2024
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with contact structure and method for preparin...
- Patent number 11,749,730
- Issue date Sep 5, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFET with built-in Schottky diode
- Patent number 11,476,369
- Issue date Oct 18, 2022
- Semiconductor Components Industries, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 11,355,613
- Issue date Jun 7, 2022
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for unipolar charge balanced semiconductor powe...
- Patent number 11,233,157
- Issue date Jan 25, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,056,569
- Issue date Jul 6, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,018,237
- Issue date May 25, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,950,707
- Issue date Mar 16, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,937,880
- Issue date Mar 2, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,937,784
- Issue date Mar 2, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and corresponding manufacturing method
- Patent number 10,593,668
- Issue date Mar 17, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 10,388,748
- Issue date Aug 20, 2019
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 10,186,592
- Issue date Jan 22, 2019
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,090,395
- Issue date Oct 2, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 9,812,542
- Issue date Nov 7, 2017
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of a germanium-based schottky junction
- Patent number 9,484,208
- Issue date Nov 1, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 9,461,167
- Issue date Oct 4, 2016
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 8,766,336
- Issue date Jul 1, 2014
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 8,431,469
- Issue date Apr 30, 2013
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes
- Patent number 8,134,219
- Issue date Mar 13, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a Schottky diode
- Patent number 7,972,913
- Issue date Jul 5, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 7,884,003
- Issue date Feb 8, 2011
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming of the periphery of a schottky diode with MOS trenches
- Patent number 7,820,494
- Issue date Oct 26, 2010
- STMicroelectronics S.A.
- Patrick Poveda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable PD-SOI devices and methods
- Patent number 7,485,504
- Issue date Feb 3, 2009
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 7,462,860
- Issue date Dec 9, 2008
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable PD-SOI devices and methods
- Patent number 7,288,819
- Issue date Oct 30, 2007
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable PD-SOI devices and methods
- Patent number 7,268,022
- Issue date Sep 11, 2007
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 7,084,423
- Issue date Aug 1, 2006
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable PD-SOI devices and methods
- Patent number 6,828,632
- Issue date Dec 7, 2004
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency FET structure
- Patent number 5,321,284
- Issue date Jun 14, 1994
- Texas Instruments Incorporated
- Bentley N. Scott
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR
- Publication number 20240162299
- Publication date May 16, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Julien BUCKLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240162297
- Publication date May 16, 2024
- Hitachi, Ltd
- Takeru SUTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE
- Publication number 20230343841
- Publication date Oct 26, 2023
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE
- Publication number 20230055024
- Publication date Feb 23, 2023
- Semiconductor Components Industries, LLC
- Andrei KONSTANTINOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TEST STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230020140
- Publication date Jan 19, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Shuhao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE
- Publication number 20220131015
- Publication date Apr 28, 2022
- Semiconductor Components Industries, LLC
- Andrei KONSTANTINOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20210305392
- Publication date Sep 30, 2021
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273961
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273960
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200243662
- Publication date Jul 30, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20200194428
- Publication date Jun 18, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...
- Publication number 20200105944
- Publication date Apr 2, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20190334006
- Publication date Oct 31, 2019
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180269298
- Publication date Sep 20, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Corresponding Manufacturing Method
- Publication number 20180190651
- Publication date Jul 5, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180166552
- Publication date Jun 14, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20180033862
- Publication date Feb 1, 2018
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR
- Publication number 20170365605
- Publication date Dec 21, 2017
- HGST NETHERLANDS B.V.
- Daniel BEDAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20130119446
- Publication date May 16, 2013
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20120280294
- Publication date Nov 8, 2012
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110291203
- Publication date Dec 1, 2011
- Kabushiki Kaisha Toshiba
- Akio MIYAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODES
- Publication number 20110227135
- Publication date Sep 22, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20110169124
- Publication date Jul 14, 2011
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20100301400
- Publication date Dec 2, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20090104770
- Publication date Apr 23, 2009
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming of the periphery of a schottky diode with MOS trenches
- Publication number 20070222018
- Publication date Sep 27, 2007
- STMicroelectronics S.A.
- Patrick Poveda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stable PD-SOI devices and methods
- Publication number 20060246680
- Publication date Nov 2, 2006
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for depinning the fermi level of a semiconductor at an elect...
- Publication number 20050247956
- Publication date Nov 10, 2005
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming of the periphery of a schottky diode with MOS trenches
- Publication number 20050136613
- Publication date Jun 23, 2005
- STMicroelectronics, S.A.
- Patrick Poveda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stable PD-SOI devices and methods
- Publication number 20050023613
- Publication date Feb 3, 2005
- Micron Technology, Inc.
- Arup Bhattacharyya
- H01 - BASIC ELECTRIC ELEMENTS

with Schottky drain or source contact

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for preparing semiconductor device with contact structure

Semiconductor device with contact structure and method for preparin...

SiC MOSFET with built-in Schottky diode

Method for depinning the Fermi level of a semiconductor at an elect...

Systems and methods for unipolar charge balanced semiconductor powe...

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Method of manufacturing a semiconductor device

Semiconductor device and corresponding manufacturing method

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Preparation method of a germanium-based schottky junction

Method for depinning the Fermi level of a semiconductor at an elect...

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Schottky diodes

Method for forming a Schottky diode

Method for depinning the fermi level of a semiconductor at an elect...

Forming of the periphery of a schottky diode with MOS trenches

Stable PD-SOI devices and methods

Method for depinning the Fermi level of a semiconductor at an elect...

Stable PD-SOI devices and methods

Stable PD-SOI devices and methods

Method for depinning the Fermi level of a semiconductor at an elect...

Stable PD-SOI devices and methods

High frequency FET structure

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR

SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE

SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE

SEMICONDUCTOR TEST STRUCTURE AND METHOD FOR MANUFACTURING SAME

SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

Method of Manufacturing a Semiconductor Device

SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

Semiconductor Device and Corresponding Manufacturing Method

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

NON-VOLATILE SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SCHOTTKY DIODES

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

SCHOTTKY DIODE

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

Forming of the periphery of a schottky diode with MOS trenches

Stable PD-SOI devices and methods

Method for depinning the fermi level of a semiconductor at an elect...

Forming of the periphery of a schottky diode with MOS trenches

Stable PD-SOI devices and methods