with shorted PN or schottky junction other than emitter junction

Industry

CPC
Y10S257/928

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Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

Current Industry

Y10S257/928with shorted PN or schottky junction other than emitter junction

Industries

Patents Grantslast 30 patents

Information Patent Grant
Three-terminal antifuse structure having integrated heating element...
- Patent number 9,184,129
- Issue date Nov 10, 2015
- GlobalFoundries U.S. 2 LLC
- Byeongju Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Antifuse structure having an integrated heating element
- Patent number 7,982,285
- Issue date Jul 19, 2011
- International Business Machines Corporation
- Byeongju Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Four-terminal antifuse structure having integrated heating elements...
- Patent number 7,880,266
- Issue date Feb 1, 2011
- International Business Machines Corporation
- Byeongju Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor layer structure and method of making the same
- Patent number 7,846,814
- Issue date Dec 7, 2010
- Sang-Yun Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor layer structure and method of making the same
- Patent number 7,671,371
- Issue date Mar 2, 2010
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer structure and method of making the same
- Patent number 7,470,598
- Issue date Dec 30, 2008
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and driving method thereof
- Patent number 7,358,590
- Issue date Apr 15, 2008
- Semiconductor Energy Laboratory Co., Ltd.
- Mikio Yukawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Antifuse structure having an integrated heating element
- Patent number 7,323,761
- Issue date Jan 29, 2008
- International Business Machines Corporation
- Byeongju Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 7,276,771
- Issue date Oct 2, 2007
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 7,187,054
- Issue date Mar 6, 2007
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 7,112,865
- Issue date Sep 26, 2006
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse structure and method of use
- Patent number 7,071,534
- Issue date Jul 4, 2006
- Micron Technology, Inc.
- Kenneth W. Marr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 6,975,013
- Issue date Dec 13, 2005
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a bipolar transistor, and method of manuf...
- Patent number 6,930,011
- Issue date Aug 16, 2005
- Koninklijke Philips Electronics N.V.
- Godefridus A. M. Hurkx
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse structure and method of use
- Patent number 6,836,000
- Issue date Dec 28, 2004
- Micron Technology, Inc.
- Kenneth W. Marr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory structure
- Patent number 6,770,950
- Issue date Aug 3, 2004
- eMemory Technology Inc.
- Ching-Song Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a simplified CMOS polysilicon thin film tran...
- Patent number 6,677,612
- Issue date Jan 13, 2004
- Micron Technology, Inc.
- Salman Akram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a simplified CMOS polysilicon thin film tran...
- Patent number 6,620,654
- Issue date Sep 16, 2003
- Micron Technology, Inc.
- Salman Akram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 6,383,836
- Issue date May 7, 2002
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a simplified CMOS polysilicon thin film tran...
- Patent number 6,335,230
- Issue date Jan 1, 2002
- Micron Technology, Inc.
- Salman Akram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a simplified CMOS polysilicon thin film tran...
- Patent number 6,320,203
- Issue date Nov 20, 2001
- Micron Technology, Inc.
- Salman Akram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mutual implant region used for applying power/ground to a source of...
- Patent number 6,300,661
- Issue date Oct 9, 2001
- Advanced Micro Devices, Inc.
- Daniel Kadosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser programming of CMOS semiconductor devices using make-link str...
- Patent number 6,281,563
- Issue date Aug 28, 2001
- Texas Instruments Incorporated
- Kendall Scott Wills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a bipolar transistor, and method of manuf...
- Patent number 6,252,282
- Issue date Jun 26, 2001
- U.S. Philips Corporation
- Godefridus A. M. Hurkx
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for the monolithic integration of a light emittin...
- Patent number 6,236,671
- Issue date May 22, 2001
- Agilent Technologies, Inc.
- Dubravko I. Babic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for the monolithic integration of a light emittin...
- Patent number 6,222,202
- Issue date Apr 24, 2001
- Agilent Technologies, Inc.
- Dubravko I. Babic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method for manufacturing the same
- Patent number 6,221,688
- Issue date Apr 24, 2001
- Fuji Electric Co. Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier
- Patent number 6,175,143
- Issue date Jan 16, 2001
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a simplified CMOS polysilicon thin film tran...
- Patent number 6,140,160
- Issue date Oct 31, 2000
- Micron Technology, Inc.
- Salman Akram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage semiconductor device
- Patent number 6,133,617
- Issue date Oct 17, 2000
- Kabushiki Kaisha Toshiba
- Keizo Hirayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FOUR-TERMINAL ANTIFUSE STRUCTURE HAVING INTEGRATED HEATING ELEMENTS...
- Publication number 20110101496
- Publication date May 5, 2011
- International Business Machines Corporation
- Byeongju Park
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Layer Structure And Method Of Making The Same
- Publication number 20080265360
- Publication date Oct 30, 2008
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Layer Structure And Method Of Making The Same
- Publication number 20080261380
- Publication date Oct 23, 2008
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE STRUCTURE HAVING AN INTEGRATED HEATING ELEMENT
- Publication number 20080111210
- Publication date May 15, 2008
- International Business Machines Corporation
- Byeongju Park
- G11 - INFORMATION STORAGE
Information Patent Application
ANTIFUSE STRUCTURE HAVING AN INTEGRATED HEATING ELEMENT
- Publication number 20080073749
- Publication date Mar 27, 2008
- International Business Machines Corporation
- Byeongju Park
- G11 - INFORMATION STORAGE
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20060244006
- Publication date Nov 2, 2006
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and driving method thereof
- Publication number 20060220252
- Publication date Oct 5, 2006
- Semiconductor Energy Laboratory Co., Ltd.
- Mikio Yukawa
- G11 - INFORMATION STORAGE
Information Patent Application
Antifuse structure having an integrated heating element
- Publication number 20060102982
- Publication date May 18, 2006
- International Business Machines Corporation
- Byeongiu Park
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor layer structure and method of making the same
- Publication number 20050282356
- Publication date Dec 22, 2005
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20050179105
- Publication date Aug 18, 2005
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20050151219
- Publication date Jul 14, 2005
- Fuji Electric Holdings Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Antifuse structure and method of use
- Publication number 20050029622
- Publication date Feb 10, 2005
- Micron Technology, Inc.
- Kenneth W. Marr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor memory structure and method of manufacture
- Publication number 20030173646
- Publication date Sep 18, 2003
- Ching-Song Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20030030120
- Publication date Feb 13, 2003
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with a bipolar transistor, and method of manuf...
- Publication number 20020024113
- Publication date Feb 28, 2002
- U.S. PHILIPS CORPORATION
- Godefridus A.M. Hurkx
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a simplified CMOS polysilicon thin film tran...
- Publication number 20020005518
- Publication date Jan 17, 2002
- Salman Akram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a simplified CMOS polysilicon thin film tran...
- Publication number 20020004264
- Publication date Jan 10, 2002
- Salman Akram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20010035560
- Publication date Nov 1, 2001
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and method for manufacturing the same
- Publication number 20010017393
- Publication date Aug 30, 2001
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS

with shorted PN or schottky junction other than emitter junction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-terminal antifuse structure having integrated heating element...

Antifuse structure having an integrated heating element

Four-terminal antifuse structure having integrated heating elements...

Semiconductor layer structure and method of making the same

Semiconductor layer structure and method of making the same

Semiconductor layer structure and method of making the same

Semiconductor device and driving method thereof

Antifuse structure having an integrated heating element

Diode and method for manufacturing the same

Diode and method for manufacturing the same

Diode and method for manufacturing the same

Antifuse structure and method of use

Diode and method for manufacturing the same

Semiconductor device with a bipolar transistor, and method of manuf...

Antifuse structure and method of use

Non-volatile semiconductor memory structure

Method for fabricating a simplified CMOS polysilicon thin film tran...

Method for fabricating a simplified CMOS polysilicon thin film tran...

Diode and method for manufacturing the same

Method for fabricating a simplified CMOS polysilicon thin film tran...

Method for fabricating a simplified CMOS polysilicon thin film tran...

Mutual implant region used for applying power/ground to a source of...

Laser programming of CMOS semiconductor devices using make-link str...

Semiconductor device with a bipolar transistor, and method of manuf...

System and method for the monolithic integration of a light emittin...

System and method for the monolithic integration of a light emittin...

Diode and method for manufacturing the same

Schottky barrier

Method for fabricating a simplified CMOS polysilicon thin film tran...

High breakdown voltage semiconductor device

Patents Applicationslast 30 patents

FOUR-TERMINAL ANTIFUSE STRUCTURE HAVING INTEGRATED HEATING ELEMENTS...

Semiconductor Layer Structure And Method Of Making The Same

Semiconductor Layer Structure And Method Of Making The Same

ANTIFUSE STRUCTURE HAVING AN INTEGRATED HEATING ELEMENT

ANTIFUSE STRUCTURE HAVING AN INTEGRATED HEATING ELEMENT

Diode and method for manufacturing the same

Semiconductor device and driving method thereof

Antifuse structure having an integrated heating element

Semiconductor layer structure and method of making the same

Diode and method for manufacturing the same

Diode and method for manufacturing the same

Antifuse structure and method of use

Non-volatile semiconductor memory structure and method of manufacture

Diode and method for manufacturing the same

Semiconductor device with a bipolar transistor, and method of manuf...

Method for fabricating a simplified CMOS polysilicon thin film tran...

Method for fabricating a simplified CMOS polysilicon thin film tran...

Diode and method for manufacturing the same

Diode and method for manufacturing the same