with trench gate electrode

Industry

CPC
H01L29/7813

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7813with trench gate electrode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor devices having multilayer gate dielectric layer...
- Patent number 11,563,101
- Issue date Jan 24, 2023
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC snubber
- Patent number 11,563,322
- Issue date Jan 24, 2023
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched power device with segmented trench and shielding
- Patent number 11,563,080
- Issue date Jan 24, 2023
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench gate electrodes formed in first...
- Patent number 11,557,671
- Issue date Jan 17, 2023
- Mitsubishi Electric Corporation
- Masanao Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,557,672
- Issue date Jan 17, 2023
- Rohm Co., Ltd.
- Kengo Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor package
- Patent number 11,557,587
- Issue date Jan 17, 2023
- Rohm Co., Ltd.
- Kentaro Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate transistors with low-resistance shield and gate interco...
- Patent number 11,552,017
- Issue date Jan 10, 2023
- Semiconductor Components Industries, LLC
- Prasad Venkatraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation layer and method of manufa...
- Patent number 11,552,172
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 11,552,170
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metallization structure on opposite sides...
- Patent number 11,552,016
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with oxygen inserted Si-layers
- Patent number 11,545,545
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,545,362
- Issue date Jan 3, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device and method of forming a field plate in an elongat...
- Patent number 11,545,568
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to form step-oxide trench MOSFET
- Patent number 11,538,925
- Issue date Dec 27, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,538,935
- Issue date Dec 27, 2022
- Denso Corporation
- Tsuyoshi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded trench devices
- Patent number 11,538,911
- Issue date Dec 27, 2022
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,538,902
- Issue date Dec 27, 2022
- Fuji Electric Co., Ltd.
- Naoki Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing an oxide thickness at trench corner of an U-s...
- Patent number 11,538,920
- Issue date Dec 27, 2022
- National Chiao Tung University
- Bing-Yue Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-balance power device, and process for manufacturing the char...
- Patent number 11,538,903
- Issue date Dec 27, 2022
- STMicroelectronics S.r.l.
- Antonello Santangelo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,538,904
- Issue date Dec 27, 2022
- Rohm Co., Ltd.
- Yuto Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode integrated into superjunction power MOSFETs
- Patent number 11,538,933
- Issue date Dec 27, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a group of trenches in an active region...
- Patent number 11,538,934
- Issue date Dec 27, 2022
- Sanken Electric Co., Ltd.
- Taro Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS device and manufacturing method therefor
- Patent number 11,532,726
- Issue date Dec 20, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zheng Bian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical DMOS and manufacturing method...
- Patent number 11,532,741
- Issue date Dec 20, 2022
- KEY FOUNDRY CO., LTD.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Up-diffusion suppression in a power MOSFET
- Patent number 11,527,618
- Issue date Dec 13, 2022
- Semiconductor Components Industries, LLC
- Prasad Venkatraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate MOSFET and method of manufacturing the same
- Patent number 11,527,643
- Issue date Dec 13, 2022
- uPI Semiconductor Corp.
- Nobuyuki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,527,615
- Issue date Dec 13, 2022
- Hitachi, Ltd.
- Takeru Suto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,527,634
- Issue date Dec 13, 2022
- Fuji Electric Co., Ltd.
- Naoyuki Ohse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,521,917
- Issue date Dec 6, 2022
- Rohm Co., Ltd.
- Yosui Futamura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SWITCHING DEVICE
- Publication number 20230027268
- Publication date Jan 26, 2023
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SiC MOSFET WITH RECESSED GATE DIELECTRIC
- Publication number 20230022394
- Publication date Jan 26, 2023
- Analog Power Conversion LLC
- Dumitru Gheorge SDRULLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230027022
- Publication date Jan 26, 2023
- RENESAS ELECTRONICS CORPORATION
- Takehirou MARIKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230028009
- Publication date Jan 26, 2023
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230029438
- Publication date Jan 26, 2023
- RENESAS ELECTRONICS CORPORATION
- Yasutaka NAKASHIBA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...
- Publication number 20230018824
- Publication date Jan 19, 2023
- Fuji Electric Co., Ltd.
- Yu KURIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH AND MANUFACTURING PROCESS THE...
- Publication number 20230021169
- Publication date Jan 19, 2023
- Analog Power Conversion LLC
- Dumitru Gheorge SDRULLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230012361
- Publication date Jan 12, 2023
- HYUNDAI MOBIS CO., LTD.
- Jeong Mok HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230009426
- Publication date Jan 12, 2023
- HYUNDAI MOBIS CO., LTD.
- Sin A KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230009078
- Publication date Jan 12, 2023
- DENSO CORPORATION
- Hiroki TSUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET WITH MULTIPLE STEPPED EPITAXIAL STRUCTURES
- Publication number 20230010328
- Publication date Jan 12, 2023
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Junction Device and Method for Making the Same
- Publication number 20230006036
- Publication date Jan 5, 2023
- Shenzhen Sanrise-Tech Co., LTD
- Shengan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device
- Publication number 20230006059
- Publication date Jan 5, 2023
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A POWER MOSFET AND METHOD OF MANUFAC...
- Publication number 20220416079
- Publication date Dec 29, 2022
- RENESAS ELECTRONICS CORPORATION
- Machiko SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220416078
- Publication date Dec 29, 2022
- Sanken Electric Co., Ltd
- Bungo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE
- Publication number 20220403551
- Publication date Dec 22, 2022
- SENIC Inc.
- Jung Woo CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20220406770
- Publication date Dec 22, 2022
- Rohm Co., Ltd.
- Naoki Takahashi
- B60 - VEHICLES IN GENERAL
Information Patent Application
CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CA...
- Publication number 20220406896
- Publication date Dec 22, 2022
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Xiaoping Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20220406932
- Publication date Dec 22, 2022
- DENSO CORPORATION
- Shinichiro Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING A STRAIN-INDUCING MATERIAL EMBEDD...
- Publication number 20220406937
- Publication date Dec 22, 2022
- Stefan Karner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION
- Publication number 20220406928
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING LOW-K DIELECTRIC GAPS BETWEEN ADJ...
- Publication number 20220406930
- Publication date Dec 22, 2022
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, A...
- Publication number 20220406897
- Publication date Dec 22, 2022
- Mitsubishi Electric Corporation
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND CELL STRUCTURE THEREOF
- Publication number 20220406929
- Publication date Dec 22, 2022
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20220406931
- Publication date Dec 22, 2022
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220399281
- Publication date Dec 15, 2022
- RENESAS ELECTRONICS CORPORATION
- Takehiro UEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN VERTICAL TRENCH MOSFETS AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220399460
- Publication date Dec 15, 2022
- THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Kei May LAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220399438
- Publication date Dec 15, 2022
- Fuji Electric Co., Ltd.
- Yasuyuki HOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION BALLAST TO SUPPRESS HOTSPOT FORMATION IN TRENCH FIELD P...
- Publication number 20220393004
- Publication date Dec 8, 2022
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...
- Publication number 20220393011
- Publication date Dec 8, 2022
- KEY FOUNDRY CO., LTD.
- Hyunkwang SHIN
- H01 - BASIC ELECTRIC ELEMENTS

with trench gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power semiconductor devices having multilayer gate dielectric layer...

RC snubber

Trenched power device with segmented trench and shielding

Semiconductor device having trench gate electrodes formed in first...

Semiconductor device and method of manufacturing the same

Semiconductor device and semiconductor package

Trench gate transistors with low-resistance shield and gate interco...

Silicon carbide device with compensation layer and method of manufa...

Silicon carbide device with trench gate

Semiconductor device including current spread region

Semiconductor device with metallization structure on opposite sides...

Superjunction device with oxygen inserted Si-layers

Manufacturing method of a semiconductor device with efficient edge...

Transistor device and method of forming a field plate in an elongat...

Ion implantation to form step-oxide trench MOSFET

Silicon carbide semiconductor device

Shielded trench devices

Silicon carbide semiconductor device

Method for increasing an oxide thickness at trench corner of an U-s...

Charge-balance power device, and process for manufacturing the char...

Semiconductor device

Schottky diode integrated into superjunction power MOSFETs

Semiconductor device having a group of trenches in an active region...

VDMOS device and manufacturing method therefor

Semiconductor device having vertical DMOS and manufacturing method...

Up-diffusion suppression in a power MOSFET

Trench gate MOSFET and method of manufacturing the same

Semiconductor device

Silicon carbide semiconductor device

Semiconductor device

Patents Applicationslast 30 patents

SWITCHING DEVICE

RF SiC MOSFET WITH RECESSED GATE DIELECTRIC

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...

SEMICONDUCTOR DEVICE WITH DEEP TRENCH AND MANUFACTURING PROCESS THE...

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SHIELDED GATE TRENCH MOSFET WITH MULTIPLE STEPPED EPITAXIAL STRUCTURES

Super Junction Device and Method for Making the Same

Transistor Device

SEMICONDUCTOR DEVICE INCLUDING A POWER MOSFET AND METHOD OF MANUFAC...

SEMICONDUCTOR DEVICE

SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE

Semiconductor Device

CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CA...

SILICON CARBIDE SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE HAVING A STRAIN-INDUCING MATERIAL EMBEDD...

SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION

POWER SEMICONDUCTOR DEVICE HAVING LOW-K DIELECTRIC GAPS BETWEEN ADJ...

SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, A...

SILICON CARBIDE MOSFET DEVICE AND CELL STRUCTURE THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GAN VERTICAL TRENCH MOSFETS AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

TERMINATION BALLAST TO SUPPRESS HOTSPOT FORMATION IN TRENCH FIELD P...

SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...