with trench gate electrode

Industry

CPC
H01L29/7813

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7813with trench gate electrode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,218,234
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Kengo Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,218,194
- Issue date Feb 4, 2025
- SK Hynix Inc.
- Hae Jung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for designing thereof
- Patent number 12,211,903
- Issue date Jan 28, 2025
- mqSemi AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown voltage
- Patent number 12,211,932
- Issue date Jan 28, 2025
- Renesas Electronics Corporation
- Machiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 12,211,902
- Issue date Jan 28, 2025
- Denso Corporation
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,933
- Issue date Jan 28, 2025
- Kabushiki Kaisha Toshiba
- Takuo Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 12,205,983
- Issue date Jan 21, 2025
- Denso Corporation
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 12,199,146
- Issue date Jan 14, 2025
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 12,199,149
- Issue date Jan 14, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,178
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturiing method
- Patent number 12,199,144
- Issue date Jan 14, 2025
- HITACHI ENERGY LTD
- Wolfgang Amadeus Vitale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,057
- Issue date Jan 14, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neighboring gate-all-around integrated circuit structures having co...
- Patent number 12,199,142
- Issue date Jan 14, 2025
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming buried field plate st...
- Patent number 12,199,154
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for separating different transistor regions on...
- Patent number 12,199,102
- Issue date Jan 14, 2025
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide region containing ox...
- Patent number 12,191,356
- Issue date Jan 7, 2025
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Laterally-diffused metal-oxide-semiconductor devices with an air gap
- Patent number 12,191,351
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 12,191,359
- Issue date Jan 7, 2025
- Fuji Electric Co., Ltd.
- Yu Kurioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 12,191,386
- Issue date Jan 7, 2025
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating charge balanced (CB) trench-metal-oxide-...
- Patent number 12,191,384
- Issue date Jan 7, 2025
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker corner of a gate dielectric structure around a recessed gat...
- Patent number 12,191,365
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a current spreading region
- Patent number 12,191,385
- Issue date Jan 7, 2025
- Infineon Technologies Austria AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,663
- Issue date Dec 31, 2024
- Rohm Co., Ltd.
- Kazuki Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate drive circuit and drive method for power semiconductor device
- Patent number 12,184,268
- Issue date Dec 31, 2024
- Innovision Semiconductor Inc.
- Feng Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 12,183,819
- Issue date Dec 31, 2024
- Fuji Electric Co., Ltd.
- Hiroyuki Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,820
- Issue date Dec 31, 2024
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super barrier rectifier with shielded gate electrode and multiple s...
- Patent number 12,176,397
- Issue date Dec 24, 2024
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that includes at least four semiconductor regions
- Patent number 12,176,418
- Issue date Dec 24, 2024
- Kabushiki Kaisha Toshiba
- Hiroki Nemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 12,176,396
- Issue date Dec 24, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE
- Publication number 20250048721
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Eung Jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250046758
- Publication date Feb 6, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Takashi OHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20250048673
- Publication date Feb 6, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...
- Publication number 20250048700
- Publication date Feb 6, 2025
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048708
- Publication date Feb 6, 2025
- Kabushiki Kaisha Toshiba
- Taichi FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250046612
- Publication date Feb 6, 2025
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250046759
- Publication date Feb 6, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Takeshi IMAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048685
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Yuji OSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040223
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Masatsugu YUTANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040205
- Publication date Jan 30, 2025
- DENSO CORPORATION
- HIDEFUMI TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031396
- Publication date Jan 23, 2025
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...
- Publication number 20250031428
- Publication date Jan 23, 2025
- ROHM CO., LTD.
- Seiya NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20250031408
- Publication date Jan 23, 2025
- Industrial Technology Research Institute
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR CO...
- Publication number 20250031409
- Publication date Jan 23, 2025
- ROBERT BOSCH GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20250022920
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Keisuke NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20250022953
- Publication date Jan 16, 2025
- Fuji Electric Co., Ltd.
- Takafumi UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022796
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Seigo MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20250022926
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Keisuke NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022950
- Publication date Jan 16, 2025
- Hyundai Motor Company
- Junghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250022951
- Publication date Jan 16, 2025
- Kabushiki Kaisha Toshiba
- Kentaro ICHINOSEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022952
- Publication date Jan 16, 2025
- Kabushiki Kaisha Toshiba
- Hyuga SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20250022916
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Keisuke NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE
- Publication number 20250022918
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Christian HECHT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022917
- Publication date Jan 16, 2025
- Hyundai Motor Company
- NackYong JOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015138
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Atsushi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015147
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yuto OMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015151
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015078
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Seigo MORI
- H01 - BASIC ELECTRIC ELEMENTS

with trench gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for designing thereof

Semiconductor device with improved breakdown voltage

Silicon carbide semiconductor device and method for manufacturing t...

Semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Power semiconductor device with dV/dt controllability and low gate...

Manufacture of power devices having increased cross over current

Semiconductor device

Power semiconductor device and manufacturiing method

Semiconductor device

Neighboring gate-all-around integrated circuit structures having co...

Semiconductor structure and method of forming buried field plate st...

Isolation structure for separating different transistor regions on...

Semiconductor device including silicon carbide region containing ox...

Laterally-diffused metal-oxide-semiconductor devices with an air gap

Method of manufacturing silicon carbide semiconductor device and si...

Power semiconductor device and method of fabricating the same

Techniques for fabricating charge balanced (CB) trench-metal-oxide-...

Thicker corner of a gate dielectric structure around a recessed gat...

Semiconductor device having a current spreading region

Semiconductor device

Gate drive circuit and drive method for power semiconductor device

Notch shape of trench gate bottom corner for better breakdown volta...

Silicon carbide semiconductor device

Semiconductor device

Super barrier rectifier with shielded gate electrode and multiple s...

Semiconductor device that includes at least four semiconductor regions

Semiconductor device including current spread region

Patents Applicationslast 30 patents

SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE

SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

TRENCH MOSFET AND MANUFACTURING METHOD THEREOF

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH SiC SEMICONDUCTOR LAYER AND RAISED PORTIO...

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR CO...

SIC SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SEMICONDUCTOR DEVICE

SIC SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SIC SEMICONDUCTOR DEVICE

SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE