with trench gate electrode

Industry

CPC
H01L29/7813

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7813with trench gate electrode

Industries

Patents Grantslast 30 patents

Information Patent Grant
RF SiC MOSFET with recessed gate dielectric
- Patent number 11,830,943
- Issue date Nov 28, 2023
- Analog Power Conversion LLC
- Dumitru Gheorge Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,830,945
- Issue date Nov 28, 2023
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,824,093
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Masaki Miyazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,824,112
- Issue date Nov 21, 2023
- Kabushiki Kaisha Toshiba
- Toshifumi Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate in an elongate active trench
- Patent number 11,824,114
- Issue date Nov 21, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,824,111
- Issue date Nov 21, 2023
- Kabushiki Kaisha Toshiba
- Hiro Gangi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manafacturing method for power MOSFET semiconductor device with imp...
- Patent number 11,824,113
- Issue date Nov 21, 2023
- Renesas Electronics Corporation
- Machiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple independent gates
- Patent number 11,824,523
- Issue date Nov 21, 2023
- Vishay SIliconix, LLC
- Sanjay Havanur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated trench gates with dopants implanted through gate oxide
- Patent number 11,824,092
- Issue date Nov 21, 2023
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,817,487
- Issue date Nov 14, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,817,495
- Issue date Nov 14, 2023
- Fuji Electric Co., Ltd.
- Tetsutaro Imagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,810,975
- Issue date Nov 7, 2023
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming thereof
- Patent number 11,810,973
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with trench junction barrier schottky (TJBS...
- Patent number 11,810,974
- Issue date Nov 7, 2023
- National Tsing Hua University
- Chih-Fang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor component having gate electrodes and field electrodes
- Patent number 11,810,958
- Issue date Nov 7, 2023
- Infineon Technologies AG
- Felix Buth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,804,520
- Issue date Oct 31, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,804,545
- Issue date Oct 31, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench MOSFET
- Patent number 11,798,982
- Issue date Oct 24, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,798,993
- Issue date Oct 24, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker corner of a gate dielectric structure around a recessed gat...
- Patent number 11,799,007
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 11,798,994
- Issue date Oct 24, 2023
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device having a dual mode sense terminal, electronic systems fo...
- Patent number 11,799,026
- Issue date Oct 24, 2023
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and chip singulation method
- Patent number 11,798,986
- Issue date Oct 24, 2023
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yoshihiro Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,784,184
- Issue date Oct 10, 2023
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,784,217
- Issue date Oct 10, 2023
- Kosuke Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device
- Patent number 11,784,580
- Issue date Oct 10, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,777,028
- Issue date Oct 3, 2023
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,777,030
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Shuhei Mitani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPER JUNCTION STRUCTURE
- Publication number 20230387196
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shuai ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230387215
- Publication date Nov 30, 2023
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230387888
- Publication date Nov 30, 2023
- Rohm Co., Ltd.
- Naoki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20230387292
- Publication date Nov 30, 2023
- Fuji Electric Co., Ltd.
- Tsurugi KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230387291
- Publication date Nov 30, 2023
- Fuji Electric Co., Ltd.
- Yasuyuki HOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230387194
- Publication date Nov 30, 2023
- DENSO CORPORATION
- HIDEFUMI TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20230387293
- Publication date Nov 30, 2023
- STMicroelectronics (Rousset) SAS
- Rosalia Germana-Carpineto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRENCH POWER DEVICE
- Publication number 20230378273
- Publication date Nov 23, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Kwangwon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230378340
- Publication date Nov 23, 2023
- Kabushiki Kaisha Toshiba
- Kenji KIKUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230378344
- Publication date Nov 23, 2023
- Rohm Co., Ltd.
- Kengo OMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230369483
- Publication date Nov 16, 2023
- DENSO CORPORATION
- Mariko HANASATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...
- Publication number 20230369400
- Publication date Nov 16, 2023
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE, SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING...
- Publication number 20230369410
- Publication date Nov 16, 2023
- Infineon Technologies Austria AG
- Elias Pree
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) DEVICE WITH 3D ISOLATION
- Publication number 20230369475
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURABLE LOW OHMIC POWER CIRCUITS
- Publication number 20230369485
- Publication date Nov 16, 2023
- Semiconductor Components Industries, LLC
- Santosh MENON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD
- Publication number 20230369408
- Publication date Nov 16, 2023
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230369414
- Publication date Nov 16, 2023
- RENESAS ELECTRONICS CORPORATION
- Atsushi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230369417
- Publication date Nov 16, 2023
- DENSO CORPORATION
- Hiroki MIYAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR...
- Publication number 20230369140
- Publication date Nov 16, 2023
- NEXPERIA B.V.
- Steven Peake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) DEVICE WITH IMPROVED THERM...
- Publication number 20230369476
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230369278
- Publication date Nov 16, 2023
- RENESAS ELECTRONICS CORPORATION
- Yasutaka NAKASHIBA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20230369484
- Publication date Nov 16, 2023
- DENSO CORPORATION
- HIDEFUMI TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...
- Publication number 20230369486
- Publication date Nov 16, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20230361171
- Publication date Nov 9, 2023
- DENSO CORPORATION
- HIDEFUMI TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230361211
- Publication date Nov 9, 2023
- Sumitomo Electric Industries, Ltd.
- Kosuke UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GAT...
- Publication number 20230361188
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352579
- Publication date Nov 2, 2023
- Fuji Electric Co., Ltd.
- Yuya ABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352521
- Publication date Nov 2, 2023
- RENESAS ELECTRONICS CORPORATION
- Yuta NABUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SHIELDED GATE ACCUMULATION FIELD EFFECT TRANSISTOR
- Publication number 20230352577
- Publication date Nov 2, 2023
- Semiconductor Components Industries, LLC
- Peter MOENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352371
- Publication date Nov 2, 2023
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS

with trench gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

RF SiC MOSFET with recessed gate dielectric

Semiconductor device

Silicon carbide semiconductor device

Method of fabricating super-junction based vertical gallium nitride...

Semiconductor device

Transistor device having a field plate in an elongate active trench

Semiconductor device

Manafacturing method for power MOSFET semiconductor device with imp...

Semiconductor device with multiple independent gates

Insulated trench gates with dopants implanted through gate oxide

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor structure and method of forming thereof

Semiconductor structure with trench junction barrier schottky (TJBS...

Transistor component having gate electrodes and field electrodes

Semiconductor device

Semiconductor device

Channeled implants for SiC MOSFET fabrication

Self-aligned trench MOSFET

Insulated-gate semiconductor device and method of manufacturing the...

Thicker corner of a gate dielectric structure around a recessed gat...

Manufacture of power devices having increased cross over current

SiC device having a dual mode sense terminal, electronic systems fo...

Semiconductor device and chip singulation method

Semiconductor memory device

Silicon carbide semiconductor device

Switching device

Semiconductor device

Semiconductor device

Patents Applicationslast 30 patents

SUPER JUNCTION STRUCTURE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR STRUCTURE

SILICON CARBIDE TRENCH POWER DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD OF THE SEMICONDUCTOR...

TRANSISTOR DEVICE, SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING...

INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) DEVICE WITH 3D ISOLATION

CONFIGURABLE LOW OHMIC POWER CIRCUITS

POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR...

INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) DEVICE WITH IMPROVED THERM...

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...

FIELD EFFECT TRANSISTOR

SILICON CARBIDE SEMICONDUCTOR DEVICE

THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GAT...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

VERTICAL SHIELDED GATE ACCUMULATION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE