with two-dimensional charge carrier gas channel

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CPC
H01L29/778

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/778with two-dimensional charge carrier gas channel

Industries

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Patents Grantslast 30 patents

Information Patent Grant
HEMT with stair-like compound layer at drain
- Patent number 12,224,333
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PGaN enhancement mode HEMTs with dopant diffusion spacer
- Patent number 12,224,337
- Issue date Feb 11, 2025
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,224,339
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having diffusion barrier layer
- Patent number 12,224,322
- Issue date Feb 11, 2025
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency transistor amplifiers having self-aligned double im...
- Patent number 12,224,318
- Issue date Feb 11, 2025
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and fabricating method of the same
- Patent number 12,224,338
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device incorporating a substrate recess
- Patent number 12,218,202
- Issue date Feb 4, 2025
- Wolfspeed, Inc.
- Evan Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,218,207
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including compound and nitride members
- Patent number 12,218,232
- Issue date Feb 4, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage current conversion device
- Patent number 12,216,143
- Issue date Feb 4, 2025
- Nippon Telegraph and Telephone Corporation
- Masayuki Hashisaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,218,128
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including field plate regions and manufacturing pro...
- Patent number 12,218,231
- Issue date Feb 4, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,218,233
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of manufacturing the same
- Patent number 12,218,206
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sunkyu Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,218,229
- Issue date Feb 4, 2025
- United Microelectronics Corp.
- Ming-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-GaN high-electron-mobility transistor
- Patent number 12,218,230
- Issue date Feb 4, 2025
- National Sun Yat-sen University
- Ting-Chang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices
- Patent number 12,211,841
- Issue date Jan 28, 2025
- Intel Corporation
- James S. Clarke
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field-effect transistor having improved layout
- Patent number 12,211,916
- Issue date Jan 28, 2025
- Ampleon Netherlands B.V.
- Patrick Valk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,211,923
- Issue date Jan 28, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based depletion mode differential amplifiers and...
- Patent number 12,212,289
- Issue date Jan 28, 2025
- MACOM Technology Solutions Holdings, Inc.
- Jeremy Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,211,839
- Issue date Jan 28, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,211,912
- Issue date Jan 28, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V IC with different sheet resistance 2-DEG resistors
- Patent number 12,211,835
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,206,018
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoscale thin film structure and implementing method thereof
- Patent number 12,205,986
- Issue date Jan 21, 2025
- KOREA ADVANCED NANO FAB CENTER
- Dong Hwan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,206,000
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048668
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liuchang MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC METADEVICE
- Publication number 20250048709
- Publication date Feb 6, 2025
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Mohammad Samizadeh Nikooytabalvandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER
- Publication number 20250048669
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas S. DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...
- Publication number 20250040171
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...
- Publication number 20250040210
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20250040220
- Publication date Jan 30, 2025
- Vanguard International Semiconductor Corporation
- Chen-Dong Tzou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20250040221
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...
- Publication number 20250040163
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...
- Publication number 20250040244
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250040212
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Takuya KITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE
- Publication number 20250040164
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20250040172
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...
- Publication number 20250040175
- Publication date Jan 30, 2025
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...
- Publication number 20250031398
- Publication date Jan 23, 2025
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology
- Yaozong ZHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID TYPE AlGaN/GaN HEMT DEVICE
- Publication number 20250031402
- Publication date Jan 23, 2025
- CHIH-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF, AND SEMICONDUC...
- Publication number 20250031424
- Publication date Jan 23, 2025
- Hatchip Co., Ltd
- Yonghui Frank FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250031437
- Publication date Jan 23, 2025
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Xiaoming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS
- Publication number 20250029920
- Publication date Jan 23, 2025
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS
- Publication number 20250022928
- Publication date Jan 16, 2025
- Finwave Semiconductor, Inc.
- Hal Emmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250024657
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hua Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE
- Publication number 20250022932
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiao-Chun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-NITRIDE DEVICE STRUCTURES WITH A P-TYPE LAYER
- Publication number 20250022948
- Publication date Jan 16, 2025
- MONDE Wireless Inc.
- Brian ROMANCZYK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022933
- Publication date Jan 16, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250022921
- Publication date Jan 16, 2025
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- Publication number 20250022927
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Youngtek OH
- H01 - BASIC ELECTRIC ELEMENTS

with two-dimensional charge carrier gas channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

HEMT with stair-like compound layer at drain

PGaN enhancement mode HEMTs with dopant diffusion spacer

High electron mobility transistor

Heterojunction semiconductor device with low on-resistance

Epitaxial structure having diffusion barrier layer

Semiconductor device

Radio frequency transistor amplifiers having self-aligned double im...

HEMT and fabricating method of the same

Engineered substrate structures for power and RF applications

Semiconductor device incorporating a substrate recess

Method for manufacturing semiconductor device

Semiconductor device including compound and nitride members

Voltage current conversion device

Nitride-based semiconductor bidirectional switching device and meth...

HEMT transistor including field plate regions and manufacturing pro...

High electron mobility transistor and method of manufacturing the same

Power semiconductor device and method of manufacturing the same

Semiconductor structure and method for forming the same

P-GaN high-electron-mobility transistor

Quantum dot devices

Field-effect transistor having improved layout

Semiconductor structure and forming method thereof

Group III nitride based depletion mode differential amplifiers and...

Nitride semiconductor device

Semiconductor device and fabrication method thereof

Group III-V IC with different sheet resistance 2-DEG resistors

High electron mobility transistor and method for fabricating the same

Epitaxial oxide materials, structures, and devices

Nanoscale thin film structure and implementing method thereof

High electron mobility transistor and method for forming the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

ELECTRONIC METADEVICE

GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER

SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...

NITRIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...

GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...

HYBRID TYPE AlGaN/GaN HEMT DEVICE

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF, AND SEMICONDUC...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE

N-POLAR III-NITRIDE DEVICE STRUCTURES WITH A P-TYPE LAYER

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME