with two-dimensional charge carrier gas channel

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CPC
H01L29/778

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/778with two-dimensional charge carrier gas channel

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices with opt...
- Patent number 12,272,741
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a drain back contact electrode, met...
- Patent number 12,272,743
- Issue date Apr 8, 2025
- GPOWER SEMICONDUCTOR, INC.
- Junfeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different polariz...
- Patent number 12,272,744
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,272,742
- Issue date Apr 8, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device with integrated power transistor and sta...
- Patent number 12,266,724
- Issue date Apr 1, 2025
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor including multi-portion nitride region
- Patent number 12,266,698
- Issue date Apr 1, 2025
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,266,701
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,266,723
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled switching device with resistive path
- Patent number 12,266,680
- Issue date Apr 1, 2025
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral III-nitride devices including a vertical gate module
- Patent number 12,266,725
- Issue date Apr 1, 2025
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,266,730
- Issue date Apr 1, 2025
- Panasonic Holdings Corporation
- Naohiro Tsurumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,266,696
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with multiple stepped field plate
- Patent number 12,266,721
- Issue date Apr 1, 2025
- Wolfspeed, Inc.
- Jia Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hemt with plate over channel layer
- Patent number 12,266,722
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate metal-insulator-field plate metal integrated circuit capacitor...
- Patent number 12,261,168
- Issue date Mar 25, 2025
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,259,654
- Issue date Mar 25, 2025
- Sumitomo Electric Industries, Ltd.
- Tadashi Watanabe
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Aluminum-based gallium nitride integrated circuits
- Patent number 12,261,134
- Issue date Mar 25, 2025
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 12,261,207
- Issue date Mar 25, 2025
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with dual field plates
- Patent number 12,255,235
- Issue date Mar 18, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor and method for forming same
- Patent number 12,255,252
- Issue date Mar 18, 2025
- Robert Bosch GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including plurality of gate fingers with vario...
- Patent number 12,249,543
- Issue date Mar 11, 2025
- Sumitomo Electric Industries, Ltd.
- Kenya Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode high-electron-mobility transistor
- Patent number 12,249,644
- Issue date Mar 11, 2025
- STMICROELECTRONICS INTERNATIONAL N.V.
- Matthieu Nongaillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gallium nitride device for high frequency and high power applications
- Patent number 12,249,631
- Issue date Mar 11, 2025
- Analog Devices, Inc.
- Puneet Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor devices having a silicided polysi...
- Patent number 12,243,935
- Issue date Mar 4, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization-engineered heterogeneous semiconductor heterostructures
- Patent number 12,243,916
- Issue date Mar 4, 2025
- The Government of the United States of America, as represented by the Secreta...
- Karl D. Hobart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nickel oxide film on gate electrode
- Patent number 12,243,927
- Issue date Mar 4, 2025
- Sumitomo Electric Device Innovations, Inc.
- Tomohiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D b...
- Patent number 12,243,928
- Issue date Mar 4, 2025
- IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY
- Ghada A. Khouqeer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor with improved gate arrangement
- Patent number 12,243,926
- Issue date Mar 4, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gökhan Atmaca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional device provided with a stack of two high electron mob...
- Patent number 12,243,937
- Issue date Mar 4, 2025
- STMicroelectronics France
- Matthieu Nongaillard
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...
- Publication number 20250072025
- Publication date Feb 27, 2025
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250072075
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH THERMAL PLUG
- Publication number 20250072024
- Publication date Feb 27, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alvin J. Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE COMPOSITE STRUCTURE AND SEMICONDUCTOR LAMINATE STRUCTURE
- Publication number 20250072074
- Publication date Feb 27, 2025
- WAFER WORKS CORPORATION
- Wen-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT WITH STAIR-LIKE COMPOUND LAYER AT DRAIN
- Publication number 20250072026
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION
- Publication number 20250072033
- Publication date Feb 27, 2025
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250072088
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Tomonori KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072109
- Publication date Feb 27, 2025
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Sichao LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20250072032
- Publication date Feb 27, 2025
- Industrial Technology Research Institute
- Shin-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072034
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063752
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Ikuo FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...
- Publication number 20250063787
- Publication date Feb 20, 2025
- Rohm Co., Ltd.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250063801
- Publication date Feb 20, 2025
- Innolux Corporation
- Chin-Lung Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20250063756
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...
- Publication number 20250063753
- Publication date Feb 20, 2025
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20250063754
- Publication date Feb 20, 2025
- Fujitsu Limited
- Kenji HOMMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063772
- Publication date Feb 20, 2025
- Industrial Technology Research Institute
- Po-Chun Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR STRUCTURE ON SILICON-ON-INSULATOR A...
- Publication number 20250056858
- Publication date Feb 13, 2025
- SOITEC
- Christelle Veytizou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056826
- Publication date Feb 13, 2025
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048668
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liuchang MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC METADEVICE
- Publication number 20250048709
- Publication date Feb 6, 2025
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Mohammad Samizadeh Nikooytabalvandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER
- Publication number 20250048669
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas S. DELLAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...
- Publication number 20250040171
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS

with two-dimensional charge carrier gas channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integration of p-channel and n-channel E-FET III-V devices with opt...

Semiconductor device comprising a drain back contact electrode, met...

Apparatus and circuits including transistors with different polariz...

Nitride semiconductor device

III-V semiconductor device with integrated power transistor and sta...

Nitride semiconductor including multi-portion nitride region

High electron mobility transistor and method for forming the same

Semiconductor device and method for forming the same

Voltage-controlled switching device with resistive path

Lateral III-nitride devices including a vertical gate module

Nitride semiconductor device

Manufacturing method of semiconductor device

Field effect transistor with multiple stepped field plate

Hemt with plate over channel layer

Gate metal-insulator-field plate metal integrated circuit capacitor...

Method for manufacturing semiconductor device

Aluminum-based gallium nitride integrated circuits

Extrinsic field termination structures for improving reliability of...

Field effect transistors with dual field plates

Vertical field-effect transistor and method for forming same

Semiconductor device including plurality of gate fingers with vario...

Enhancement-mode high-electron-mobility transistor

Semiconductor device, method of manufacturing the same and electron...

Gallium nitride device for high frequency and high power applications

High electron mobility transistor devices having a silicided polysi...

Polarization-engineered heterogeneous semiconductor heterostructures

Semiconductor device having nickel oxide film on gate electrode

P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D b...

HEMT transistor with improved gate arrangement

Bidirectional device provided with a stack of two high electron mob...

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...

COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

TRANSISTOR WITH THERMAL PLUG

SUPERLATTICE COMPOSITE STRUCTURE AND SEMICONDUCTOR LAMINATE STRUCTURE

HEMT WITH STAIR-LIKE COMPOUND LAYER AT DRAIN

TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR POWER DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...

ELECTRONIC DEVICE

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

GROUP III-NITRIDE SEMICONDUCTOR STRUCTURE ON SILICON-ON-INSULATOR A...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

ELECTRONIC METADEVICE

GALLIUM NITRIDE DEVICES INCLUDING A TUNNEL BARRIER LAYER

SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...