with two-dimensional charge carrier gas channel

Industry

CPC
H01L29/778

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/778with two-dimensional charge carrier gas channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Integrated semiconductor device and method for manufacturing the same
- Patent number 11,967,521
- Issue date Apr 23, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Kai Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline oxide semiconductor film and semiconductor device
- Patent number 11,967,618
- Issue date Apr 23, 2024
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device including different nitride regions improving...
- Patent number 11,967,641
- Issue date Apr 23, 2024
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, high electron mobility transistor and fabr...
- Patent number 11,967,642
- Issue date Apr 23, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-gated transistors and lateral Schottky diodes with integr...
- Patent number 11,967,619
- Issue date Apr 23, 2024
- Teledyne Scientific & Imaging, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device and method for manufacturing the same
- Patent number 11,967,519
- Issue date Apr 23, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Kai Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 11,961,902
- Issue date Apr 16, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,961,889
- Issue date Apr 16, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 11,961,888
- Issue date Apr 16, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,542
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Hsin-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,955,397
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Shin-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device with integrated power transistor and sta...
- Patent number 11,955,488
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 11,955,519
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with multiple nitride regions of different im...
- Patent number 11,955,520
- Issue date Apr 9, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 11,955,541
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,411
- Issue date Apr 9, 2024
- Rohm Co., Ltd.
- Koshun Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with an auxiliary gate structure
- Patent number 11,955,478
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,955,522
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Cheng-Wei Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,949,008
- Issue date Apr 2, 2024
- WIN SEMICONDUCTORS CORP.
- Chang-Hwang Hua
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,948,864
- Issue date Apr 2, 2024
- Kabushiki Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a doped gate elec...
- Patent number 11,942,326
- Issue date Mar 26, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Petr Kostelnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers with discontinued aluminium content for III-nitrid...
- Patent number 11,942,521
- Issue date Mar 26, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Peng-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,942,516
- Issue date Mar 26, 2024
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure and high electron mobility transistor
- Patent number 11,942,519
- Issue date Mar 26, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced interfacial area III-nitride material semiconductor structures
- Patent number 11,942,518
- Issue date Mar 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 11,942,525
- Issue date Mar 26, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode high electron mobility transistor
- Patent number 11,935,947
- Issue date Mar 19, 2024
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor device
- Patent number 11,935,744
- Issue date Mar 19, 2024
- Sumitomo Electric Industries, Ltd.
- Isao Makabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
VOLTAGE REGULATOR CIRCUIT
- Publication number 20240136351
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor and Manufacturing Method Therefor
- Publication number 20240136412
- Publication date Apr 25, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR
- Publication number 20240136433
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240136424
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-BARRIER FOR GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANS...
- Publication number 20240136431
- Publication date Apr 25, 2024
- Northrop Grumman Systems Corporation
- Robert Coffie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERHEATING PROTECTION DEVICE
- Publication number 20240136350
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240136417
- Publication date Apr 25, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240136422
- Publication date Apr 25, 2024
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240136423
- Publication date Apr 25, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240136432
- Publication date Apr 25, 2024
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240136434
- Publication date Apr 25, 2024
- ROHM CO., LTD.
- Taojun FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diamond-Capped Gallium Oxide Transistor
- Publication number 20240136180
- Publication date Apr 25, 2024
- The Government of the United States of America, as represented by the Secreta...
- Marko J. Tadjer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ELEMENT AND SEMICONDUCTOR DEVICE
- Publication number 20240128338
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- YUYA TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128366
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20240128325
- Publication date Apr 18, 2024
- Kabushiki Kaisha Toshiba
- Hajime NAGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH FIELD PLATES
- Publication number 20240128328
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michael J. ZIERAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...
- Publication number 20240128336
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240128341
- Publication date Apr 18, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128352
- Publication date Apr 18, 2024
- Sumitomo Electric Industries, Ltd.
- Akihiro HAYASAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240128353
- Publication date Apr 18, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Power Transistor Having Off-Axis Layout
- Publication number 20240128368
- Publication date Apr 18, 2024
- Microwave Technology Inc.
- Howard J. Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE W...
- Publication number 20240128133
- Publication date Apr 18, 2024
- ROBERT BOSCH GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128326
- Publication date Apr 18, 2024
- Sumitomo Electric Industries, Ltd.
- Takahide HIRASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR
- Publication number 20240128367
- Publication date Apr 18, 2024
- HRL LABORATORIES, LLC
- Daniel DENNINGHOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128263
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240128365
- Publication date Apr 18, 2024
- DB HiTek Co., Ltd.
- Min Su CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...
- Publication number 20240120404
- Publication date Apr 11, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH IMPROVED BARRIER LAYER
- Publication number 20240120416
- Publication date Apr 11, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20240120374
- Publication date Apr 11, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS

with two-dimensional charge carrier gas channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated semiconductor device and method for manufacturing the same

Crystalline oxide semiconductor film and semiconductor device

Semiconductor device including different nitride regions improving...

Semiconductor structure, high electron mobility transistor and fabr...

Laterally-gated transistors and lateral Schottky diodes with integr...

Integrated semiconductor device and method for manufacturing the same

Semiconductor device with multichannel heterostructure and manufact...

Semiconductor device and method of fabricating the same

Extrinsic field termination structures for improving reliability of...

Semiconductor device

Semiconductor structure

III-V semiconductor device with integrated power transistor and sta...

Semiconductor device with strain relaxed layer

Nitride semiconductor with multiple nitride regions of different im...

Manufacturable thin film gallium and nitrogen containing devices

Semiconductor device and method for forming the same

Semiconductor device

Power semiconductor device with an auxiliary gate structure

Semiconductor structure and method of forming the same

Semiconductor structure and method for forming the same

Semiconductor device

Process of forming an electronic device including a doped gate elec...

Epitaxial layers with discontinued aluminium content for III-nitrid...

Quantum dot devices with overlapping gates

Semiconductor structure and high electron mobility transistor

Tunnel polarization junction III-N transistors

Reduced interfacial area III-nitride material semiconductor structures

Semiconductor device with multichannel heterostructure and manufact...

Enhancement mode high electron mobility transistor

Method for manufacturing nitride semiconductor device

Patents Applicationslast 30 patents

VOLTAGE REGULATOR CIRCUIT

Field-Effect Transistor and Manufacturing Method Therefor

POWER TRANSISTOR

ELECTRONIC DEVICE

BACK-BARRIER FOR GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANS...

OVERHEATING PROTECTION DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE

Diamond-Capped Gallium Oxide Transistor

SWITCHING ELEMENT AND SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE

DEVICE WITH FIELD PLATES

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

RF Power Transistor Having Off-Axis Layout

VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE W...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

HIGH ELECTRON MOBILITY TRANSISTOR WITH IMPROVED BARRIER LAYER

SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF