3096219

Information

• Patent Grant
• 3096219

• References
• Source

• Patent Number

  3,096,219

• Date Filed

  Not available

• Date Issued

  Tuesday, July 2, 1963
  61 years ago

• CPC

  • C30B31/185 - Pattern diffusion
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B31/06 - by contacting with diffusion material in the gaseous state
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/007 - Autodoping
  • Y10S148/022 - Controlled atmosphere
  • Y10S148/056 - Gallium arsenide
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/071 - Heating, selective
  • Y10S148/106 - Masks, special
  • Y10S148/107 - Melt
  • Y10S438/971 - Stoichiometric control of host substrate composition
  • Y10S438/979 - Tunnel diodes

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices