3262059

Information

• Patent Grant
• 3262059

• References
• Source

• Patent Number

  3,262,059

• Date Filed

  Not available

• Date Issued

  Tuesday, July 19, 1966
  58 years ago

• CPC

  • H01S5/30 - Structure or shape of the active region Materials used for the active region
  • C30B25/00 - Single-crystal growth by chemical reaction of reactive gases
  • H01L21/34 - the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445 , H01L21/06, H01L21/16 and H01L21/18 with or without impurities
  • H01L21/479 - Application of electric currents or fields
  • H01L29/207 - further characterised by the doping material
  • H01L29/227 - further characterised by the doping material
  • H01L31/16 - the semiconductor device sensitive to radiation being controlled by the light source or sources
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • H01S3/00 - Lasers
  • H01S5/04 - Processes or apparatus for excitation
  • H03B9/12 - using solid state devices

• US Classifications

  • 330 - Amplifiers
  • 005 - Beds
  • 257 - Active solid-state devices
  • 331 - Oscillators
  • 359 - Optical: systems and elements
  • 372 - Coherent light generators