3363155

Information

• Patent Grant
• 3363155

• References
• Source

• Patent Number

  3,363,155

• Date Filed

  Not available

• Date Issued

  Tuesday, January 9, 1968
  58 years ago

• CPC

  • H01L31/173 - formed in, or on, a common substrate
  • H01L21/02546 - Arsenides
  • H01L21/02579 - P-type
  • H01L21/02581 - Transition metal or rare earth elements
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L21/22 - Diffusion of impurity materials
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L31/06 - characterised by at least one potential-jump barrier or surface barrier
  • H01L31/109 - the potential barrier being of the PN heterojunction type
  • H01L31/1105 - the device being a bipolar phototransistor
  • H01L31/125 - Composite devices with photosensitive elements and electroluminescent elements within one single body
  • Y02E10/50 - Photovoltaic [PV] energy
  • Y10S148/015 - Capping layer
  • Y10S148/039 - Displace P-N junction
  • Y10S148/049 - Equivalence and options
  • Y10S148/05 - Etch and refill
  • Y10S148/107 - Melt

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 327 - Miscellaneous active electrical nonlinear devices, circuits, and systems
  • 438 - Semiconductor device manufacturing: process