3372069

Information

• Patent Grant
• 3372069

• References
• Source

• Patent Number

  3,372,069

• Date Filed

  Not available

• Date Issued

  Tuesday, March 5, 1968
  56 years ago

• CPC

  • H01L21/2022 - Epitaxial regrowth of non-monocrystalline semiconductor materials
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • Y10S117/913 - Graphoepitaxy or surface modification to enhance epitaxy
  • Y10S148/017 - Clean surfaces
  • Y10S148/029 - Differential crystal growth rates
  • Y10S148/049 - Equivalence and options
  • Y10S148/056 - Gallium arsenide
  • Y10S148/115 - Orientation
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/152 - Single crystal on amorphous substrate
  • Y10S148/158 - Sputtering

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 023 - Chemistry: physical processes
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 427 - Coating processes