3380154

Information

• Patent Grant
• 3380154

• References
• Source

• Patent Number

  3,380,154

• Date Filed

  Not available

• Date Issued

  Tuesday, April 30, 1968
  56 years ago

• CPC

  • H01L29/80 - with field effect produced by a PN or other rectifying junction gate
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/22 - Diffusion of impurity materials
  • H01L21/24 - Alloying of impurity materials
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/02 - Semiconductor bodies; Multistep manufacturing processes therefor
  • H01L29/06 - characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/40 - Electrodes; Multistep manufacturing processes therefor
  • H01L29/66075 - of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/76 - Unipolar devices
  • H03F21/00 - Amplifiers not covered by groups H03F3/00 - H03F19/00
  • Y10S438/919 - Compensation doping

• US Classifications

  • 438 - Semiconductor device manufacturing: process