3413157

Information

• Patent Grant
• 3413157

• References
• Source

• Patent Number

  3,413,157

• Date Filed

  Not available

• Date Issued

  Tuesday, November 26, 1968
  56 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • C30B1/02 - by thermal treatment
  • C30B19/02 - using molten solvents
  • C30B29/06 - Silicon
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02491 - Conductive materials
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/003 - Anneal
  • Y10S148/026 - Deposition thru hole in mask
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/154 - Solid phase epitaxy
  • Y10S148/166 - Traveling solvent method
  • Y10S148/17 - Vapor-liquid-solid

• US Classifications

  • 257 - Active solid-state devices
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process