3424955

Information

• Patent Grant
• 3424955

• References
• Source

• Patent Number

  3,424,955

• Date Filed

  Not available

• Date Issued

  Tuesday, January 28, 1969
  55 years ago

• CPC

  • C04B41/5338 - Etching
  • H01F10/00 - Thin magnetic films
  • H01L21/0242 - Crystalline insulating materials
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/02661 - In-situ cleaning
  • H01L21/78 - with subsequent division of the substrate into plural individual devices
  • H01L21/86 - the insulating body being sapphire, e.g. silicon on sapphire structure
  • H01L27/12 - the substrate being other than a semiconductor body
  • Y10S148/049 - Equivalence and options
  • Y10S148/051 - Etching
  • Y10S148/085 - Isolated-integrated
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S438/967 - Semiconductor on specified insulator

• US Classifications

  • 257 - Active solid-state devices
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process