3454434

Information

• Patent Grant
• 3454434

• References
• Source

• Patent Number

  3,454,434

• Date Filed

  Not available

• Date Issued

  Tuesday, July 8, 1969
  55 years ago

• CPC

  • H01L29/06 - characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/0245 - Silicon, silicon germanium, germanium
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/86 - controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
  • Y10S148/025 - Deposition multi-step
  • Y10S148/157 - Special diffusion and profiles

• US Classifications

  • 148 - Metal treatment
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 257 - Active solid-state devices