3585071

Information

• Patent Grant
• 3585071

• References
• Source

• Patent Number

  3,585,071

• Date Filed

  Not available

• Date Issued

  Tuesday, June 15, 1971
  53 years ago

• CPC

  • H01L29/22 - including, apart from doping materials or other impurities, only AIIBVI compounds
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/24 - Alloying of impurity materials
  • H01L21/285 - from a gas or vapour
  • H01L21/34 - the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445 , H01L21/06, H01L21/16 and H01L21/18 with or without impurities
  • H01L21/479 - Application of electric currents or fields
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/227 - further characterised by the doping material
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/064 - Gp II-VI compounds
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S148/169 - Vacuum deposition

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices