3615878

Information

• Patent Grant
• 3615878

• References
• Source

• Patent Number

  3,615,878

• Date Filed

  Not available

• Date Issued

  Tuesday, October 26, 1971
  53 years ago

• CPC

  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B15/02 - adding crystallising material or reactants forming it in situ to the melt
  • H05B6/30 - Arrangements for remelting or zone melting
  • Y10S117/906 - Special atmosphere other than vacuum or inert
  • Y10S148/022 - Controlled atmosphere
  • Y10S148/056 - Gallium arsenide
  • Y10S148/107 - Melt
  • Y10S438/909 - Controlled atmosphere
  • Y10S438/971 - Stoichiometric control of host substrate composition

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process