3634150

Information

• Patent Grant
• 3634150

• References
• Source

• Patent Number

  3,634,150

• Date Filed

  Not available

• Date Issued

  Tuesday, January 11, 1972
  53 years ago

• CPC

  • C30B25/18 - characterised by the substrate
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S117/915 - Separating from substrate
  • Y10S148/026 - Deposition thru hole in mask
  • Y10S148/043 - Dual dielectric
  • Y10S148/049 - Equivalence and options
  • Y10S148/052 - Face to face deposition
  • Y10S148/085 - Isolated-integrated
  • Y10S148/105 - Masks, metal
  • Y10S148/106 - Masks, special
  • Y10S148/135 - Removal of substrate
  • Y10S148/145 - Shaped junctions
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S148/164 - Three dimensional processing
  • Y10S438/945 - Special

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process