3649386

Information

• Patent Grant
• 3649386

• References
• Source

• Patent Number

  3,649,386

• Date Filed

  Not available

• Date Issued

  Tuesday, March 14, 1972
  53 years ago

• CPC

  • H01L23/29 - characterised by the material
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/76205 - in a region being recessed from the surface
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/03 - Diffusion
  • Y10S148/031 - Diffusion at an edge
  • Y10S148/085 - Isolated-integrated
  • Y10S148/114 - Nitrides of silicon
  • Y10S148/117 - Oxidation, selective
  • Y10S438/911 - Differential oxidation and etching

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process