Diffusion at an edge

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CPC
Y10S148/031

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/031Diffusion at an edge

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Patents Grantslast 30 patents

Information Patent Grant
Selective sidewall diffusion process using doped SOG
- Patent number 5,308,790
- Issue date May 3, 1994
- NCR Corporation
- Derryl D. J. Allman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an infrared detector
- Patent number 5,192,695
- Issue date Mar 9, 1993
- Fermionics Corporation
- Cheng-Chi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,108,944
- Issue date Apr 28, 1992
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a narrow width EEPROM with single diffusion electrode f...
- Patent number 5,094,968
- Issue date Mar 10, 1992
- Atmel Corporation
- Steven J. Schumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming buried contact between polysilicon gate and diffu...
- Patent number 5,064,776
- Issue date Nov 12, 1991
- Micron Technology, Inc.
- Martin C. Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a self-aligned impurity induced disordered structure
- Patent number 5,061,656
- Issue date Oct 29, 1991
- Motorola, Inc.
- Curtis D. Moyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of edge doping SOI islands
- Patent number 5,053,345
- Issue date Oct 1, 1991
- Harris Corporation
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,039,623
- Issue date Aug 13, 1991
- U.S. Philips Corporation
- Henricus G. R. Maas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge doping processes for mesa structures in SOS and SOI devices
- Patent number 5,028,564
- Issue date Jul 2, 1991
- Chen-Chi P. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS and bipolar fabrication process using selective epitaxial grow...
- Patent number 5,010,034
- Issue date Apr 23, 1991
- National Semiconductor Corporation
- Juliana Manoliu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device IC with DMOS using self-aligned back gate region
- Patent number 4,878,096
- Issue date Oct 31, 1989
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing Bi-CMOS semiconductor IC devices using dopa...
- Patent number 4,806,499
- Issue date Feb 21, 1989
- Oki Electric Industry Co., Ltd.
- Mamoru Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3716425
- Patent number 3,716,425
- Issue date Feb 13, 1973
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3649386
- Patent number 3,649,386
- Issue date Mar 14, 1972
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3636420
- Patent number 3,636,420
- Issue date Jan 18, 1972
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3602982
- Patent number 3,602,982
- Issue date Sep 7, 1971
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3534234
- Patent number 3,534,234
- Issue date Oct 13, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3530343
- Patent number 3,530,343
- Issue date Sep 22, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3524114
- Patent number 3,524,114
- Issue date Aug 11, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3507713
- Patent number 3,507,713
- Issue date Apr 21, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3427479
- Patent number 3,427,479
- Issue date Feb 11, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3411051
- Patent number 3,411,051
- Issue date Nov 12, 1968
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3384791
- Patent number 3,384,791
- Issue date May 21, 1968
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3333166
- Patent number 3,333,166
- Issue date Jul 25, 1967
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3268374
- Patent number 3,268,374
- Issue date Aug 23, 1966
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3210225
- Patent number 3,210,225
- Issue date Oct 5, 1965
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3025439
- Patent number 3,025,439
- Issue date Mar 13, 1962
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2787564
- Patent number 2,787,564
- Issue date Apr 2, 1957
- H01 - BASIC ELECTRIC ELEMENTS

Diffusion at an edge

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Selective sidewall diffusion process using doped SOG

Method of making an infrared detector

Method of manufacturing a semiconductor device

Fabricating a narrow width EEPROM with single diffusion electrode f...

Method of forming buried contact between polysilicon gate and diffu...

Method for making a self-aligned impurity induced disordered structure

Method of edge doping SOI islands

Method of manufacturing a semiconductor device

Edge doping processes for mesa structures in SOS and SOI devices

CMOS and bipolar fabrication process using selective epitaxial grow...

Semiconductor device IC with DMOS using self-aligned back gate region

Method of manufacturing Bi-CMOS semiconductor IC devices using dopa...

3716425

3649386

3636420

3602982

3534234

3530343

3524114

3507713

3427479

3411051

3384791

3333166

3268374

3210225

3025439

2787564

Patents Applicationslast 30 patents