3655457

Information

• Patent Grant
• 3655457

• References
• Source

• Patent Number

  3,655,457

• Date Filed

  Not available

• Date Issued

  Tuesday, April 11, 1972
  52 years ago

• CPC

  • H01L29/167 - further characterised by the doping material
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/26506 - in group IV semiconductors
  • H01L21/26513 - of electrically active species
  • H01L21/26586 - characterised by the angle between the ion beam and the crystal planes or the main crystal surface
  • H01L21/3221 - of silicon bodies
  • H01L21/74 - Making of localized buried regions
  • H01L21/761 - PN junctions
  • H01L21/82 - to produce devices
  • H01L21/8222 - Bipolar technology
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L29/0821 - Collector regions of bipolar transistors
  • Y10S148/062 - Gold diffusion
  • Y10S148/085 - Isolated-integrated
  • Y10S148/151 - Simultaneous diffusion
  • Y10S438/904 - Charge carrier lifetime control

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices