3674552

Information

• Patent Grant
• 3674552

• References
• Source

• Patent Number

  3,674,552

• Date Filed

  Not available

• Date Issued

  Tuesday, July 4, 1972
  52 years ago

• CPC

  • C30B29/42 - Gallium arsenide
  • C30B11/10 - Solid or liquid components
  • C30B11/12 - Vaporous components
  • C30B13/00 - Single-crystal growth by zone-melting Refining by zone-melting
  • C30B15/00 - Single-crystal growth by pulling from a melt
  • C30B19/04 - the solvent being a component of the crystal composition
  • C30B25/205 - the substrate being of insulating material
  • C30B29/26 - with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B29/48 - AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
  • G11B5/62 - Record carriers characterised by the selection of the material
  • H01F1/0313 - Oxidic compounds
  • H01F10/06 - characterised by the coupling or physical contact with connecting or interacting conductors
  • H01F10/193 - Magnetic semiconductor compounds
  • H01F10/26 - characterised by the substrate or intermediate layers
  • H01F41/20 - by evaporation
  • Y10S148/063 - Gp II-IV-VI compounds
  • Y10S148/107 - Melt
  • Y10S148/115 - Orientation
  • Y10S148/118 - Oxide films
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S438/967 - Semiconductor on specified insulator

• US Classifications

  • 428 - Stock material or miscellaneous articles
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process
  • G9B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER