3723177

Information

• Patent Grant
• 3723177

• References
• Source

• Patent Number

  3,723,177

• Date Filed

  Not available

• Date Issued

  Tuesday, March 27, 1973
  52 years ago

• CPC

  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B19/04 - the solvent being a component of the crystal composition
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • Y10S148/025 - Deposition multi-step
  • Y10S148/049 - Equivalence and options
  • Y10S148/056 - Gallium arsenide
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/107 - Melt
  • Y10S148/142 - Semiconductor-metal-semiconductor
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S438/967 - Semiconductor on specified insulator

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 228 - Metal fusion bonding
  • 438 - Semiconductor device manufacturing: process