3761319

Information

• Patent Grant
• 3761319

• References
• Source

• Patent Number

  3,761,319

• Date Filed

  Not available

• Date Issued

  Tuesday, September 25, 1973
  51 years ago

• CPC

  • H01L21/263 - with high-energy radiation
  • H01L21/22 - Diffusion of impurity materials
  • H01L21/761 - PN junctions
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L29/0826 - Pedestal collectors
  • H01L29/66272 - Silicon vertical transistors
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/085 - Isolated-integrated
  • Y10S148/128 - Proton bombardment of silicon
  • Y10S148/151 - Simultaneous diffusion
  • Y10S438/923 - Diffusion through a layer
  • Y10S438/965 - Shaped junction formation

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices