3812519

Information

• Patent Grant
• 3812519

• References
• Source

• Patent Number

  3,812,519

• Date Filed

  Not available

• Date Issued

  Tuesday, May 21, 1974
  50 years ago

• CPC

  • H01L29/167 - further characterised by the doping material
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/2255 - the applied layer comprising oxides only
  • Y10S148/03 - Diffusion
  • Y10S148/04 - Dopants, special
  • Y10S148/041 - Doping control in crystal growth
  • Y10S148/097 - Lattice strain and defects
  • Y10S257/919 - Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics
  • Y10S438/919 - Compensation doping

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process