3821020

Information

• Patent Grant
• 3821020

• References
• Source

• Patent Number

  3,821,020

• Date Filed

  Not available

• Date Issued

  Friday, June 28, 1974
  50 years ago

• CPC

  • C30B29/06 - Silicon
  • C30B25/02 - Epitaxial-layer growth
  • Y10S117/906 - Special atmosphere other than vacuum or inert
  • Y10S148/007 - Autodoping
  • Y10S148/079 - Inert carrier gas
  • Y10S438/909 - Controlled atmosphere

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 427 - Coating processes
  • 438 - Semiconductor device manufacturing: process