3839082

Information

• Patent Grant
• 3839082

• References
• Source

• Patent Number

  3,839,082

• Date Filed

  Not available

• Date Issued

  Tuesday, October 1, 1974
  50 years ago

• CPC

  • C30B25/02 - Epitaxial-layer growth
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • Y10S148/005 - Antimonides of gallium or indium
  • Y10S148/007 - Autodoping
  • Y10S148/064 - Gp II-VI compounds
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S438/916 - Autodoping control or utilization
  • Y10S438/933 - Germanium or silicon or Ge-Si on III-V

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 438 - Semiconductor device manufacturing: process