3839177

Information

• Patent Grant
• 3839177

• References
• Source

• Patent Number

  3,839,177

• Date Filed

  Not available

• Date Issued

  Tuesday, October 1, 1974
  50 years ago

• CPC

  • H01L23/291 - Oxides or nitrides or carbides
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/31116 - by dry-etching
  • H01L21/31144 - using masks
  • H01L23/522 - including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • H05K3/08 - the conductive material being removed by electric discharge

• US Classifications

  • 204 - Chemistry: electrical and wave energy
  • 257 - Active solid-state devices