This application claims priority to European Patent Application No. 06022327.8, filed Oct. 25, 2006, which is herein incorporated by reference.
The invention generally relates to a charged particle beam device and a method of imaging specimen with a charged particle beam, particularly for inspection applications, testing applications, lithography applications and the like. More particularly, it relates to a charged particle beam device, a use of an aperture arrangement for a charged particle beam device, and a method of manufacturing an aperture arrangement for a charged particle beam device.
Charged particle beam apparatuses have many functions in a plurality of industrial fields, including, but not limited to, inspection of semiconductor devices during manufacturing, exposure systems for lithography, detecting devices and testing systems. Thus, there is a high demand for structuring and inspecting specimens within the micrometer and nanometer scale.
Micrometer and nanometer scale process control, inspection or structuring, is often done with charged particle beams, e.g., electron beams, which are generated and focused in charged particle beam devices, such as electron microscopes or electron beam pattern generators. Charged particle beams offer superior spatial resolution compared to, e.g., photon beams, due to their short wavelengths.
Charged particle beam device typically include an aperture for beam current control. Contaminations on the aperture can change the current and the trajectory trespassing through an aperture diaphragm. In order to counteract such influences and to further control the beam current different aperture openings and aperture sizes may be provided, e.g., in a multi aperture unit. Further, by controlling the beam current the spot size on a specimen can be further adjusted. Depending on the position of the aperture opening, that is whether the aperture opening is on-axis or off-axis, aberrations in the system may also be considered.
In light of the above, the present invention intends to provide an improved charged particle beam device, an improved method of operating a charged particle beam device and a method of manufacturing the charged particle device.
The object is solved by the charged particle device according to independent claim 1, by the use of a charged particle beam device according to independent claim 12, and by the method according to independent claim 19.
According to one embodiment, a charged particle beam device is provided. The charged particle beam device includes an emitter for emitting a charged particle beam in a propagation direction essentially along an optical axis of the charged particle beam device, and an aperture arrangement within the charged particle beam device. The aperture arrangement includes a first aperture element having a recess of the first aperture element. The first aperture element is movable in a first direction and with respect to the optical axis. The aperture arrangement includes a second aperture element having a recess of the second aperture element. The second aperture element is movable in essentially the first direction and with respect to the optical axis. The aperture arrangement includes a holder for holding the first aperture element and the second aperture element, a motion element adapted to move the first aperture element and the second aperture element with respect to the optical axis. The first aperture element and the second aperture element are displaced with respect to each other along the propagation direction, and the first aperture element and the second aperture element are movable in the first direction such that the recess of the first aperture element and the recess of the second aperture element form an aperture opening of a variable size.
According to another embodiment, a use of an aperture arrangement for a charged particle beam device adapted for variably controlling a beam current of a charged particle beam trespassing in a propagation direction essentially along on optical axis of the charged particle beam device is provided. The use includes moving a first aperture element and a second aperture element in a first direction with respect to each other such that a recess of the first aperture element and the recess of the second aperture element form an aperture opening of a variable size for trespassing of the charged particle beam, the aperture opening being located essentially on the optical axis.
According to a further embodiment, a method of manufacturing an aperture arrangement for a charged particle beam device adapted for variably controlling a beam current of a charged particle beam trespassing in a propagation direction essentially along on optical axis of the charged particle beam device, including: providing a first aperture element and a second aperture element with a fixed position relative to each other with regard to the optical axis, and thereafter forming a recess of the first aperture element and a recess of the second aperture element.
Further advantages, features, aspects and details that can be combined with the above embodiments are evident from the dependent claims, the description and the drawings.
According to the embodiments described herein, a charged particle device including an aperture arrangement with variable size is provided. Further, the aperture arrangement may be provided to be contamination free and with a current control feedback mechanism.
Embodiments are also directed to apparatuses for carrying out the disclosed methods and including apparatus parts for performing each described method steps. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments are also directed to methods by which the described apparatus operates. It includes method steps for carrying out every function of the apparatus or manufacturing every part of the apparatus.
Some of the above indicated and other more detailed aspects of the invention will be described in the following description and partially illustrated with reference to the figures. Therein:
Without limiting the scope of the present application, in the following the charged particle beam device or components thereof will exemplarily be referred to as an electron beam device or components thereof. Thereby, the electron beam might especially be utilized for inspection or lithography. The present invention can still be applied for apparatuses and components using other sources of charged particles and/or other secondary and/or backscattered charged particles to obtain a specimen image or to pattern a specimen.
Within the following description of the drawings, the same reference numbers refer to the same components. Generally, only the differences with respect to the individual embodiments are described.
A “specimen” as referred to herein, includes, but is not limited to, semiconductor wafers, semiconductor workpieces, and other workpieces such as optical blanks, memory disks and the like. Embodiments of the invention may be applied to any generally flat workpiece on which material is deposited or which are structured. A specimen includes a flat surface to be structured or on which layers are deposited, an opposing surface, an edge, and typically a bevel.
An “aperture” as referred to herein, is not to be understood as any kind of opening, like a lens mount, a part of the column housing or parts that might theoretically delimit a beam. An aperture is to be understood as an optical aperture that is introduced in order to delimit the size of a charged particle beam, i.e., an aperture diaphragm. In light thereof, the aperture opening may generally be considered to be smaller than 1 mm, e.g., 2 μm to 700 μm, for a charged particle beam application.
The aperture element 102 is movable as indicated by arrow 12. The aperture element 104 is movable as indicated by arrow 14. By moving the aperture elements with respect to each other along the same direction, the opening 112 is variable and has a continuously adjustable aperture opening size. Thereby, the aperture arrangement 100 including the aperture elements 102 and 104 includes a quadratic aperture opening 110 with an adjustable size.
According to one embodiment, the triangular recesses 103 and 105 have an angle of 90 degrees at their inner corner. Thereby, during movement according to arrows 12 and 14, the shape of the aperture opening 110 maintains essentially quadratic.
The shapes of the recesses and aperture openings described herein may vary from the theoretical shape in light of the manufacturing precision and the precision that can be realized when moving the aperture elements with respect to each other. Thus, for example, a quadratic shape is to be understood as essentially quadratic. This includes a deviation from a square of, for example, 10% or the like.
Generally, embodiments described herein provide a continuous variation of the aperture opening size as compared to discrete values in common system.
Within the embodiments described herein, the recesses forming the aperture opening are moved in essentially the same direction (small deviations may occur for example by a lever arm as described with respect to
Generally, scanning electron beam devices provide a resolution of the system that is dependent from the spot size of the electron beam on a specimen. Many electron beam device have a spot size that is limited by the beam current in the electron beam. Therefore, if a beam current limiting aperture is provided the spot size on the specimen varies dependent from the size of the aperture opening. Providing a multi-aperture arrangement with different aperture sizes allows for beam currents with discrete predetermined values. (For example two, four or eight different aperture sizes.) The movable aperture elements with recesses according to the embodiments described herein allow a continuous adjustment of the beam current and, thereby, the spot size.
According to another embodiment, different shapes of recesses may be used. Thereby, however, the shape of the opening 110 generally varies when the overlapping aperture elements 102 and 104 are moved with respect to each other. For example, the recesses may be elliptical or may have a different triangular shape. Thereby, openings with an elliptical contour or rectangular openings, respectively, may be realized. According to another embodiment, one aperture element may have a recess with the triangular shape and a 60° angle at its inner side. The other aperture element may have no recess. Thereby, also an opening with varying size and a congruent shape may be realized.
According to one embodiment, the aperture elements 102 and 104 are displaced by a distance of about 200 μm. Thereby, sufficient distance is provided in order not to disturb the relative movement of the aperture elements. According to another embodiment, the aperture elements are displaced by a distance of 0.5 mm to 1.5 mm. Thereby, a safety margin is provided. This avoids any sliding or rubbing contact between the aperture elements, which may produce particles that can contaminate the environment in the electron beam device. According to an even further embodiment, even higher distances up to, for example, 2 mm may be provided. Large displacements of the two aperture elements may however disturb the optical characteristics of the electron beam device. The distance used for specific applications may depend upon the fact, whether the aperture opening is beam-current-limiting only or if the aperture opening is imaged in an image plane.
The movement of the lever arms is introduced by motion elements 230. According to one embodiment, the motion elements 230 are piezo elements. The piezo elements are mounted between a fixed part 224 of the holder and the level arms 222. The movement of the piezo elements 230 moves the lever arms 222. Thereby, the aperture elements 202 and 204 are moved with respect to each other as indicated by arrows 12 and 14. The lever arms enlarge the movement of the piezo elements 230. Thereby, a small movement of the piezo elements can result in a sufficiently large movement of the aperture elements.
Within the embodiment shown in
According to a further embodiment, the portion of the lever arms and the motion element, which are further distant from the aperture opening, may have an increased height without influencing the installation height (the optical path length) of the electron beam device.
According to one embodiment, the aperture opening 210 should be variable between 5 μm and 500 μm. Depending on the length of the lever arms 222, the movement of one aperture element by at least a few hundred μm can be realized by the piezo elements 230. According to another embodiment, the movements of the aperture elements are conducted symmetrical such that the aperture opening 210 remains essentially at the same position.
According to further embodiments, the piezo elements 230 may be replaced by other actuators, as for example actuators based on a magneto-rheological effect. As another example, magneto restrictive actuators may be used. Also electro-rheological elements may be used to introduce the movement of the aperture elements 202 and 204.
According to a further embodiment, only a single motion element 230 is provided for movement of the aperture elements. Thereby, the movement of the motion element requires reduced or no control. For example piezo elements have a small movement increment (high relative precision) in the nanometer range. However, an absolute positioning precision is low which requires a control mechanism to define the actual position of the motion element. Such a control that may have more importance if two motion elements need to be synchronized in their movement may be omitted if only one element is used. Depending on the ratio between the movement of the motion element and the movement of the aperture element an absolute positioning control may also be omitted if two motion elements are provided.
The aperture element 304 includes a mounting portion 307. The mounting portion 307 includes openings 306, which are used to mount the aperture element 304 on the holder 320. The aperture element 304 further includes an aperture forming portion 309 including the recess 305. The aperture forming portion 309 is overlapped by an aperture forming portion of a further aperture element, thereby forming an aperture opening with a variable size. The aperture element 304 further includes a portion 308, which is indicated by dashed lines. The dashed lines illustrate the fact that the portion 308, which is mainly utilized to stabilize the aperture element, may be removed after the aperture element 304 has been mounted on the holder 320.
According to one embodiment, the mounting portion has a width of 5 mm to 10 mm in order to provide a sufficiently large area for mounting of the aperture element. The aperture forming portion may have a width of 2-3 mm.
The aperture arrangement 300 further includes motion element 330. The motion element 330 can be a piezo electric element. However, according to further embodiments, other motion elements, as described with respect to
The motion element 330 is in contact with the holder 320, as illustrated in
As shown in
In order to avoid a situation as shown in
According to one embodiment, the aperture elements 502 and 504 are mounted on a holder. The connecting portions 503 ensure a fixed position relative to each other. Further, reinforcement portions 508 provide additional stability during mounting of the aperture elements 502 and 504 onto the holder.
The aperture elements 502 and 504 may be mounted and fixed to the holder by screws provided through openings 506. According to another embodiment, the aperture elements may be welded or glued to the holder. Other fixing means can additionally or alternatively be provided.
After the aperture elements 502 and 504 are fixedly mounted on the holder, the connecting elements 503 can be removed. Further, the reinforcement portions 508 can be removed after the aperture elements are fixedly mounted on the holder.
In light of the above, by providing at least connecting elements 503 between the aperture element 502 and the aperture element 504, the precision, which can be realized during manufacturing of the aperture elements including the recesses, can be carried forward to the aperture arrangement without introducing any displacement during mounting of the aperture elements on the holder.
According to another embodiment (not shown), the manufacturing precision of the aperture elements can also be carried forward to the aperture assembly by first mounting a sheet or two sheets, respectively, on a holder for the aperture arrangement and, afterwards, forming the other portions of the aperture elements including the recesses, which provide the aperture opening of the aperture arrangement, in the sheet fixedly mounted on the holder. Thereby, after separating of the sheet into the first aperture element including the first recess and a second aperture opening including a second recess, the manufacturing precision of the recesses can be carried forward to the aperture arrangement.
Within
Width 19 of the aperture forming portion 509 of the aperture elements 502 and 504 may typically be in the range of 2 mm to 3 mm for the embodiments described herein. The width 19 of the aperture forming portion of the aperture elements determines, after removal of the reinforcement portions 508, the stability of the aperture arrangement, and further influences the heating characteristic of the aperture arrangement. The heating of the aperture arrangement will be described for example with respect to
Within
As described above, within
According to another embodiment, the aperture opening with the variable size is entirely closed and a beam deflection unit may be omitted according to this embodiment. The beam is guided onto a parking position located onto at least one element of the group consisting of: the first aperture element and the second aperture element. By entirely closing the aperture opening, the beam can be entirely blocked.
However, a parking/blanking position on the aperture arrangement may influence the aperture arrangement. On impingement of the electron beam 4, the aperture arrangement can be contaminated. Contaminations on an aperture element or on one of the aperture elements influences the imaging properties of the electron beam system because contaminations tend to be charged and, thereby, provide an electric field acting on the electron beam. Further, if the contamination built-up is further increased the aperture opening itself, that is the shape thereof, can be distorted.
A cleaning mechanism for the aperture arrangement is provided according to the embodiment shown in
The aperture elements 102 and 104 are resistively heated to avoid contamination built-up. As shown in
According to the embodiment shown in
According to one embodiment, a continuous heating might be conducted by heating the aperture element 102 and the aperture element 104 continuously to a temperature of about 150° C. to 250° C. Thereby, however, the fields introduced by the heating currents may deteriorate the imaging properties of the electron beam device during operation.
Therefore, according to another embodiment, typically a flash heating can be provided. The flash heating uses heating during a limited period of time, e.g., 60 seconds. During the heating flash, the aperture elements are heated to temperatures in a range of 500° C. to 700° C. Typically, for a flash heating, the electron beam device is not generating images during the time of heating.
Additionally or alternatively the heating flashes might be provided for an even shorter time period, e.g., 1 second or below. Thereby, the currents within the aperture elements can be provided for example during a time where the electron beam is swept back between scanning of two lines. Further, the heating current, that is the flashes of heating currents, can be applied at those time periods when the system is not producing an image, i.e., a non-imaging mode. As a result, the magnetic field associated with the heating currents will not influence the electron beam.
As described with regard to
The width of the aperture forming portion of the aperture elements may typically be in the range of 2 mm to 3 mm for the embodiments described herein. The width of the aperture forming portion of the aperture elements determines, after removal of the reinforcement portions, the stability of the aperture arrangement, and further influences the heating characteristic of the aperture arrangement.
Therefore, according to one embodiment, the width of the strip of sheet material of the aperture forming portion of the aperture element is the same in the recess portion and the portion including the straight edge opposing the other aperture element. Thus, the resistivity of the sheet is the same along the path of the aperture forming portion of the aperture element. In light thereof a constant heating can be provided.
In light of the limited width of the aperture forming portion of the aperture element it should also be noted that according to one embodiment the reinforcement portion of the aperture element is removed after mounting on the holder because the reinforcement portion would require additional current for resistively heating the aperture element.
Further, the aperture elements including portions with a relatively small width provide only a little mass. Thereby, the aperture can be heated more easily and can cool faster without heating a larger area of the surround portions of the electron beam device as necessary. The displacements of the first and the second aperture elements, which has been described with respect to other embodiments, may also be adapted such that the aperture elements do not get into rubbing contact with each other when the aperture elements, which are fixed at the mounting portions thereof, are subject to thermal expansion and bend upward or downward in direction of the optical axis.
Within
Within
The beam current measurement device 860 can be a Faraday cup or other means for measuring the beam current. Thereby, deflection unit 840 or other deflection units can be used to deflect the electron beam onto the beam current measurement device. According to another embodiment, the beam current may be determined by the intensity of the secondary and/or backscattered particles measured from a reference sample as a specimen. Further, the deflection unit 840 can further be utilized to deflect the electron beam from the optical axis 2 onto a parking position on the aperture arrangement.
The elements described above, are associated with respective controllers or sensing systems. Deflection unit 840 is controlled by deflection unit controller 841. Motion element 830 is controlled by motion element controller 831. Beam current measuring device 860 is controlled by beam current measuring device controller 861. The beam current measuring device controller 861 also receives the signals from the beam current measurement device 860 and provides a corresponding signal value to the general system controller 870. Detector 32 is controlled by detector controller 832 and, accordingly, receives signals by the detector and provides the signals to the system controller 870. The system controller 870 determines the beam current after the aperture arrangement based on input signals from the beam current measuring device controller 861 and/or detector controller 832. Thereby, the system controller 870 can provide a signal towards motion element controller 831 for controlling the motion element of the aperture arrangement. Thus, a feedback loop for controlling the beam current of the electron beam device can be provided. Independent of other influences of the electron beam device, the aperture opening of the aperture arrangement can be varied in size in order to have a constant beam current on the specimen.
In light of the above, the control of the aperture opening may also be improved. Generally, if for example a piezo element is used for varying the size of the aperture arrangement, the piezo element might require an absolute positioning control feedback to provide an absolute positioning precision. Piezo elements can provide movement of the aperture elements with a very small increment. However, the absolute positioning position is low.
In light of the current measurement feedback control, according to one embodiment, a positioning detection element for the motion element can be omitted because the absolute positioning precision of the motion element 830, which determines the size of the aperture opening, is not necessarily used for controlling the aperture arrangement. Instead, the beam current trespassing the aperture arrangement, can be used for controlling the motion element 830 of the aperture arrangement.
According to one embodiment, a feedback of a beam current measurement to adapt the size of the continuously varying aperture opening size can be provided during an alignment procedure of the system, e.g., once a day. Thereby, during each alignment of the system the beam current is adjusted by varying the aperture opening size. According to yet another embodiment, a feedback control of the beam current measurement to adapt the size of the continuously varying aperture opening size may also be conducted more often. For example the beam current could be measured during non-imaging times of the system. Thereby, a feedback to the motion element of the aperture arrangement can be provided on a more regular base, e.g., every minute or every second. Thereby, a quasi-continuous control of the beam current can be realized.
The embodiments related to aperture arrangements described herein have an on-axis beam blocking height that is significantly smaller than aperture arrangements, which deflect the electron beam to different aperture openings in order to vary the size of the aperture opening. The on-axis beam blocking height is to be understood as the distance along the beam propagation that is necessary for a beam to be deflected away from the optical axis to an aperture opening, for trespassing the height of the aperture element and for a beam deflection back onto the optical axis. Since the present invention is capable of providing a varying size aperture opening on the optical axis, a beam deflection away from the optical axis and back onto the optical axis can be omitted. Thus, the height of the overall system for the aperture element (including potential deflection units) can be significantly reduced. Thereby, the length of the electron beam column can be reduced or does not require additional length. A shorter column length can improve the imaging properties of the system.
Generally, for the embodiments described herein, the variable size aperture arrangements according to the present invention can be provided with a space requirement on the optical axis that is significantly smaller as compared to common systems including multi-apertures and associated deflectors. The aperture arrangements of embodiments described herein have a height (on-axis beam blocking height) of below 40 mm, for example between 1 and 10 mm, typically 5 mm. For the embodiments described herein, it is particularly possible to have a small height close to the optical axis and have a larger height at portions of the holder or portions of the motion elements that can be provided distant from the optical axis. An example of an aperture arrangement with a small height on the optical axis and a larger height at a position about 2 cm to 10 cm distant from the optical axis is shown in
The embodiment of
While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Number | Date | Country | Kind |
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06022327.8 | Oct 2006 | EP | regional |