Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller. One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. The semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Pat. No. 6,936,194, all of which are hereby incorporated by reference.
An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable layer (polymerizable) and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process. The patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid. After solidification, the template is separated from the rigid layer such that the template and the substrate are spaced apart. The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
So that the present invention may be understood in more detail, a description of embodiments of the invention is provided with reference to the embodiments illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the invention, and are therefore not to be considered limiting of the scope.
Referring to the figures, and particularly to
Substrate 12 and substrate chuck 14 may be further supported by stage 16. Stage 16 may provide motion along the x-, y-, and z-axes. Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
Spaced-apart from substrate 12 is a template 18. Template 18 generally includes a mesa 20 extending therefrom towards substrate 12, mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Patterning surface 22 may be used to pattern a single field on template 18 using a step-and-repeat process as described herein. Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.
Template 18 may be coupled to chuck 28. Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Pat. No. 6,873,087, which is hereby incorporated by reference. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
System 10 may further comprise a fluid dispense system 32. Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12. Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 20 and substrate 12 depending on design considerations. Polymerizable material 34 may comprise a monomer mixture as described in U.S. Pat. No. 7,157,036 and U.S. Patent Publication No. 2005/0187339, all of which are hereby incorporated by reference.
Referring to
Either imprint head 30, stage 16, or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34. For example, imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34. After the desired volume is filled with polymerizable material 34, source 38 produces energy 40, e.g., ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to shape of a surface 44 of substrate 12 and patterning surface 22, defining a patterned layer 46 on substrate 12. Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having thickness t1 and residual layer having a thickness t2. Template 18 may be separated from patterned layer 46 may used to pattern another field in a step-and-repeat process.
The above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Pat. No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2004/0188381, and U.S. Patent Publication No. 2004/0211754, each of which is hereby incorporated by reference.
Ascertaining a desired alignment between template 18 and a field of substrate 12 may aid in the facilitation of pattern transfer between template 18 and substrate 12. To facilitate alignment, an alignment system utilizing alignment marks on the template 18 and/or substrate 12 may be used with one alignment mark of the pair being disposed on the template 18, and the remaining alignment mark being positioned on the substrate 12.
Alignment system 60 may be used for a field-by-field alignment process. As illustrated in
Reconfigurable Alignment System
Field 70a may be divided according to the number of sub-fields 92 within field 70a. For example, in
Further, each sub-field 92 may contain multiple alignment marks 72a. Placement of alignment marks 72a within field 70a and/or sub-field 92 may be designed to limit the surface area allocated to alignment marks 72a on substrate 12. In one example, alignment marks 72a may be within each corner of the sub-field 92. In another example, alignment marks 72a may be placed in a gap between sub-fields 92. In another example, alignment marks 72a may be placed in a gap between potentially yielding dies.
At the edge of substrate 12, not all sub-fields 92 provide yielding dies as described above. As illustrated in
In one example, alignment measurement system 90 may be reconfigured to detect alignment marks 72a in potentially yielding sub-fields 92 in addition to or in lieu of alignment marks 72 of field 70. Generally, alignment measurement system 90 is configured to not only detect alignment marks 72 within one or more corners of field 90, but also is configured to detect alignment marks 72a within sub-fields 92. As illustrated in
In another example, as illustrated in
To facilitate movement without increasing particle generation and/or to increase throughput, alignment measurement system 90 may driven by a scanning stage 200 as illustrated in
Scanning stage 200 may comprise a first direction stage 202 (e.g., X stage) adjacent to a second direction stage 204 (e.g., Y stage). X stage 202 may include a plurality of sides 206. Sides 206 may be positioned about an open area 208. Sides 206 may form any shape formation including, but limited to, square, rectangle, hexagonal, circular, and/or any fanciful shape. Y stage 204 may includes a plurality of side 210. Sides 210 may be positioned about open area 208. Sides 210 may form any shape formation including, but limited to, square, rectangle, hexagonal, circular, and/or any fanciful shape. Shape formation of sides 210 may be similar to shape of sides 206 or different from shape of sides 206.
In another example, as illustrated in
Independent Theta Measurement
Referring to
Neighboring Field Alignment
Referring to
This application claims the benefit under 35 U.S.C. §119(e)(1) of U.S. Provisional Patent Application No. 61/111,102, filed Nov. 4, 2008, which is hereby incorporated by reference herein in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
4869998 | Eccles et al. | Sep 1989 | A |
6018395 | Mori et al. | Jan 2000 | A |
6071656 | Lin | Jun 2000 | A |
6277532 | Yahiro | Aug 2001 | B1 |
6368761 | Chien et al. | Apr 2002 | B1 |
6466301 | Yui et al. | Oct 2002 | B1 |
6724096 | Werner et al. | Apr 2004 | B2 |
6826738 | Cadouri | Nov 2004 | B2 |
6842229 | Sreenivasan et al. | Jan 2005 | B2 |
6873087 | Choi et al. | Mar 2005 | B1 |
6902853 | Sreenivasan et al. | Jun 2005 | B2 |
6908830 | Lu et al. | Jun 2005 | B2 |
6916584 | Sreenivasan et al. | Jul 2005 | B2 |
6921615 | Sreenivasan et al. | Jul 2005 | B2 |
6922906 | Choi et al. | Aug 2005 | B2 |
6954275 | Choi et al. | Oct 2005 | B2 |
7027156 | Watts et al. | Apr 2006 | B2 |
7033847 | Tai et al. | Apr 2006 | B2 |
7070405 | Sreenivasan et al. | Jul 2006 | B2 |
7170589 | Cherala et al. | Jan 2007 | B2 |
7186483 | Sreenivasan et al. | Mar 2007 | B2 |
7245358 | Nimmakayala et al. | Jul 2007 | B2 |
7281921 | Watts et al. | Oct 2007 | B2 |
7292326 | Nimmakayala et al. | Nov 2007 | B2 |
7303383 | Sreenivasan et al. | Dec 2007 | B1 |
7323130 | Nimmakayala et al. | Jan 2008 | B2 |
7353077 | Lin et al. | Apr 2008 | B2 |
7388663 | Gui | Jun 2008 | B2 |
7670529 | Choi et al. | Mar 2010 | B2 |
20030003677 | Fukada | Jan 2003 | A1 |
20040022888 | Sreenivasan et al. | Feb 2004 | A1 |
20040096759 | Barber | May 2004 | A1 |
20040149687 | Choi et al. | Aug 2004 | A1 |
20040163563 | Sreenivasan et al. | Aug 2004 | A1 |
20040180276 | Tai et al. | Sep 2004 | A1 |
20050064344 | Bailey et al. | Mar 2005 | A1 |
20050269745 | Cherala et al. | Dec 2005 | A1 |
20050270516 | Cherala et al. | Dec 2005 | A1 |
20050271955 | Cherala et al. | Dec 2005 | A1 |
20060108541 | Koike | May 2006 | A1 |
20060114450 | Nimmakayala et al. | Jun 2006 | A1 |
20060115999 | Sreenivasan et al. | Jun 2006 | A1 |
20060126058 | Nimmakayala et al. | Jun 2006 | A1 |
20070228609 | Sreenivasan et al. | Oct 2007 | A1 |
20070228610 | Sreenivasan et al. | Oct 2007 | A1 |
20070231421 | Nimmakayala et al. | Oct 2007 | A1 |
20070243655 | Schmid et al. | Oct 2007 | A1 |
20080153312 | Sreenivasan et al. | Jun 2008 | A1 |
20080204693 | Nimmakayala et al. | Aug 2008 | A1 |
20080204696 | Kamijima | Aug 2008 | A1 |
20090026657 | Nimmakayala et al. | Jan 2009 | A1 |
20090147237 | Schumaker et al. | Jun 2009 | A1 |
20090250840 | Selinidis et al. | Oct 2009 | A1 |
20100099259 | Selinidis et al. | Apr 2010 | A1 |
Number | Date | Country |
---|---|---|
2005167030 | Jun 2005 | JP |
9810121 | Mar 1998 | WO |
2009073206 | Jun 2009 | WO |
Entry |
---|
Choi et al. Layer-to-Layer Alignment for Step and Flash Imprint Lithography, SPIE's 26th Intl. Symp. Microlithography: Emerging Lithographic Technologies, Santa Clara, CA Mar. 1, 2001. |
Number | Date | Country | |
---|---|---|---|
20100110434 A1 | May 2010 | US |
Number | Date | Country | |
---|---|---|---|
61111102 | Nov 2008 | US |