Claims
- 1. A system for polishing a substrate comprising (i) a liquid carrier, (ii) ammonium oxalate, (iii) a hydroxy coupling agent, and (iv) a polishing pad and/or an abrasive.
- 2. The polishing system of claim 1, wherein the liquid carrier is a nonaqueous solvent.
- 3. The polishing system of claim 1, wherein the liquid carrier is water.
- 4. The polishing system of claim 3, wherein no abrasive is present, and the polishing pad is a non-abrasive pad.
- 5. The polishing system of claim 3, wherein an abrasive is fixed on the polishing pad.
- 6. The polishing system of claim 3, wherein the polishing system comprises an abrasive suspended in the water.
- 7. The polishing system of claim 6, wherein the abrasive is a metal oxide.
- 8. The polishing system of claim 7, wherein the abrasive is silica.
- 9. The polishing system of claim 8, wherein the hydroxy coupling agent is ureidopropyltrimethoxysilane.
- 10. The polishing system of claim 9, further comprising a film-forming agent.
- 11. The polishing system of claim 10, wherein the film-forming agent is an organic heterocycle comprising at least one 5-6 member heterocyclic nitrogen-containing ring.
- 12. The polishing system of claim 11, wherein the film-forming agent is benzotriazole.
- 13. The polishing system of claim 3, wherein the hydroxy coupling agent is a silane-containing compound.
- 14. The polishing system of claim 13, wherein the hydroxy coupling agent is ureidopropyltrimethoxysilane.
- 15. The polishing system of claim 3, wherein the pH is about 9-11.
- 16. A method of polishing a substrate comprising contacting at least a portion of a substrate with the polishing system of claim 1 and polishing the portion of the substrate therewith.
- 17. The method of claim 16, wherein the substrate comprises copper.
- 18. The method of claim 17, wherein the substrate further comprises tantalum.
- 19. The method of claim 18, wherein the Cu:Ta removal rate is at least about 1:1.
- 20. The method of claim 17, wherein the substrate further comprises tetraethoxysilane.
- 21. The method of claim 20, wherein the Cu:TEOS removal rate is at least about 1:2.
- 22. A method of polishing a substrate comprising contacting at least a portion of a substrate with the polishing system of claim 12 and polishing the portion of the substrate therewith.
- 23. The method of claim 22, wherein the substrate comprises copper.
- 24. The method of claim 23, wherein the substrate further comprises tantalum.
- 25. The method of claim 24, wherein the Cu:Ta removal rate is at least about 1:1.
- 26. The method of claim 23, wherein the substrate further comprises tetraethoxysilane.
- 27. The method of claim 26, wherein the Cu:TEOS removal rate is at least about 1:2.
CROSS-REFERENCE TO RELATED PATENT APPLICATIONS
[0001] This patent application claims priority to provisional U.S. Patent Application No. 60/261,928 filed on Jan. 16, 2001.
Provisional Applications (1)
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Number |
Date |
Country |
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60261928 |
Jan 2001 |
US |