Claims
- 1. A method of forming a semiconductor device including enhanced photoresist adhesion comprising the steps of:providing a substrate having an uppermost surface; depositing a single layer of carbon on the uppermost surface of the substrate; and forming a resist stack on an uppermost surface of the single layer of carbon.
- 2. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 1 wherein the step of providing a substrate having an uppermost surface includes providing a substrate formed of a III-V material.
- 3. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 2 wherein the step of providing a substrate having an uppermost surface includes providing a substrate formed of InGaAs.
- 4. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 2 wherein the step of providing a substrate having an uppermost surface includes providing a substrate formed of InAlAs.
- 5. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 2 wherein the step of providing a substrate having an uppermost surface includes providing a substrate formed of GaAs.
- 6. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 1 wherein the step of depositing a single layer of carbon includes plasma enhanced chemical vapor deposition (PECVD).
- 7. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 1 wherein the step of depositing a single layer of carbon includes sputtering.
- 8. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 1 wherein the step of depositing a single layer of carbon includes depositing a polymer-like carbon material.
- 9. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 1 wherein the step of depositing a single layer of carbon includes depositing a diamond-like carbon material.
- 10. A method of forming a semiconductor device including enhanced photoresist adhesion as claimed in claim 1 wherein the step of forming a resist stack on an uppermost surface of the single layer of carbon includes forming a multi-layer resist stack.
Parent Case Info
This application claims the benefit of provisional application Ser. No. 09/703,208 filed Oct. 31, 2000 now U.S. Pat. No. 6,368,924.
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