Antireflection film composition, substrate, and patterning process

Abstract

There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin;a first acid generator that is decomposed at a temperature of 200 degrees C. or less; andan organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic section view of one embodiment of a substrate according to the present invention.

FIG. 2 is a schematic explanatory view of one embodiment of a patterning process according to the present invention.

FIG. 3 is a schematic explanatory view of another embodiment of a patterning process according to the present invention.

Claims

1. An antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin;a first acid generator that is decomposed at a temperature of 200 degrees C. or less; andan organic solvent.

2. The antireflection film composition according to claim 1, further comprising a second acid generator that has higher decomposition temperature than the first acid generator.

3. The antireflection film composition according to claim 2, wherein decomposition temperature of the second acid generator is higher than baking temperature of the antireflection film composition.

4. The antireflection film composition according to claim 2, wherein decomposition temperature of the second acid generator is higher than 200 degrees C.

5. The antireflection film composition according to claim 3, wherein decomposition temperature of the second acid generator is higher than 200 degrees C.

6. The antireflection film composition according to claim 2, wherein the second acid generator generates acid upon exposure to radiation.

7. The antireflection film composition according to claim 3, wherein the second acid generator generates acid upon exposure to radiation.

8. The antireflection film composition according to claim 4, wherein the second acid generator generates acid upon exposure to radiation.

9. The antireflection film composition according to claim 5, wherein the second acid generator generates acid upon exposure to radiation.

10. The antireflection film composition according to claim 1, wherein the light absorbing silicone resin comprises: an organic group having one or more of a carbon-oxygen single bond and/or one or more of a carbon-oxygen double bond;a light absorbing group; anda silicon atom whose end is one or more of Si—OH and/or one or more of Si—OR (R represents an alkyl group).

11. The antireflection film composition according to claim 9, wherein the light absorbing silicone resin comprises: an organic group having one or more of a carbon-oxygen single bond and/or one or more of a carbon-oxygen double bond;a light absorbing group; anda silicon atom whose end is one or more of Si—OH and/or one or more of Si—OR (R represents an alkyl group).

12. The antireflection film composition according to claim 10, wherein the organic group of the light absorbing silicone resin comprises one or more group selected from the group consisting of an epoxy group, an ester group, an alkoxy group, and a hydroxy group.

13. The antireflection film composition according to claim 11, wherein the organic group of the light absorbing silicone resin comprises one or more group selected from the group consisting of an epoxy group, an ester group, an alkoxy group, and a hydroxy group.

14. The antireflection film composition according to claim 10, wherein the light absorbing group of the light absorbing silicone resin comprises one or more ring selected from the group consisting of an anthracene ring, a naphthalene ring, and a benzene ring.

15. The antireflection film composition according to claim 13, wherein the light absorbing group of the light absorbing silicone resin comprises one or more ring selected from the group consisting of an anthracene ring, a naphthalene ring, and a benzene ring.

16. The antireflection film composition according to claim 10, wherein the light absorbing group of the light absorbing silicone resin comprises a silicon-silicon bond.

17. The antireflection film composition according to claim 15, wherein the light absorbing group of the light absorbing silicone resin comprises a silicon-silicon bond.

18. The antireflection film composition according to claim 1, further comprising a neutralizer.

19. The antireflection film composition according to claim 17, further comprising a neutralizer.

20. A substrate comprising at least an antireflection film formed with the antireflection film composition according to claim 1, and a positive photoresist film over the antireflection film.

21. A patterning process for a substrate by lithography comprising: at least applying to a substrate the antireflection film composition according to claim 1;baking the antireflection film composition to form an antireflection film;applying a photoresist film composition to the antireflection film;pre-baking the photoresist film composition to form a photoresist film;exposing a pattern circuit area of the photoresist film;subsequently developing the photoresist film with a developer to form a resist pattern on the photoresist film; andetching the antireflection film and the substrate with using as a mask the photoresist film on which the resist pattern is formed to pattern the substrate.

22. A patterning process for a substrate by lithography comprising: at least applying to a substrate the antireflection film composition according to claim 1;baking the antireflection film composition to form an antireflection film;applying a photoresist film composition to the antireflection film;pre-baking the photoresist film composition to form a photoresist film;exposing a pattern circuit area of the photoresist film;subsequently developing the photoresist film with a developer to form a resist pattern on the photoresist film;etching the antireflection film with using as a mask the photoresist film on which the resist pattern is formed; andetching the substrate with using the patterned antireflection film as a mask to pattern the substrate.

23. A patterning process for a substrate by lithography comprising: at least forming an organic film over a substrate;applying to the organic film the antireflection film composition according to claim 1;baking the antireflection film composition to form an antireflection film;applying a photoresist film composition to the antireflection film;pre-baking the photoresist film composition to form a photoresist film;exposing a pattern circuit area of the photoresist film;subsequently developing the photoresist film with a developer to form a resist pattern on the photoresist film;etching the antireflection film with using as a mask the photoresist film on which the resist pattern is formed;etching the organic film with using the patterned antireflection film as a mask; andetching the substrate to pattern the substrate.