Apparatus and method for plasma etching

Abstract

The invention aims at solving the problems of throughput deterioration, reproducibility deterioration and plasma discharge instability when performing continuous discharge during multiple steps of plasma etching. According to the present invention, the gas supply unit is operated while determining the timing for switching conditions of a plurality of plasma etching steps, and the gas flow rate and gas pressure are controlled so that the pressure of processing gas supplied from the gas supply unit to the processing chamber does not fall below a predetermined pressure immediately subsequent to switching steps. For example, upon switching processing gases, the end point of a step is predicted based on an interference film thickness meter, and prior to the end point by two seconds or more, the flow rate of MFC is set to the gas flow rate for the subsequent step and the gas is flown to the exhaust device, so that simultaneously as when the end point signal is received, the processing gases are switched by switching valves.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a configuration diagram of an etching apparatus according to embodiment 1 of the present invention;

FIG. 2 shows a structure of a gas supply unit of the etching apparatus according to embodiment 1;

FIG. 3 shows a plasma discharge stable range when the ratio of power is 1:1 according to embodiment 1;

FIG. 4 shows a plasma discharge stable range when the ratio of power is 1:0 according to embodiment 1;

FIG. 5 shows a plasma discharge stable range when the ratio of power is 0:1 according to embodiment 1;

FIG. 6 is an etching condition chart according to embodiment 2 of the present invention;

FIG. 7 shows a time variation of the total gas flow rate of the first wafer according to embodiment 1;

FIG. 8 shows a time variation of the total gas flow rate of the second wafer according to embodiment 1;

FIG. 9 shows the structure of a gas supply unit of the etching apparatus according to embodiment 2;

FIG. 10 shows a time variation of the total gas flow rate of the first wafer according to embodiment 2;

FIG. 11 shows a time variation of the total gas flow rate of the second wafer according to embodiment 2;

FIG. 12 shows a time variation of the reflecting power of embodiment 2;

FIG. 13 shows a time variation of the vacuum processing chamber pressure of embodiment 2;

FIG. 14 is a configuration diagram of the etching apparatus according to embodiment 3 of the present invention;

FIG. 15 shows a time variation of reflection intensity obtained via an interference film thickness monitor according to embodiment 3;

FIG. 16 shows a time variation of the total gas flow rate according to embodiment 3;

FIG. 17 shows a time variation of the vacuum processing chamber pressure according to embodiment 3;

FIG. 18 shows a time variation of the reflecting power according to the present invention;

FIG. 19 shows a time variation of the total gas flow rate according to embodiment 3 of the present invention;

FIG. 20 shows a time variation of the vacuum processing chamber pressure according to embodiment 3;

FIG. 21 shows a time variation of the reflecting power according to embodiment 3;

FIG. 22 shows a time variation of the vacuum processing chamber pressure according to embodiment 3;

FIG. 23 is a configuration diagram of the etching apparatus according to embodiment 4 of the present invention;

FIG. 24 shows the relationship between a valve opening control cycle and a pressure minimal value according to embodiment 4;

FIG. 25 shows a time variation of the vacuum processing chamber pressure according to embodiment 4;

FIG. 26 shows a time variation of the reflecting power according to embodiment 4;

FIG. 27 is a configuration diagram of the etching apparatus according to embodiment 5 of the present invention;

FIG. 28 is an etching condition chart according to embodiment 5;

FIG. 29 is a cross-sectional structure of the substrate to be etched prior to processing according to embodiment 5;

FIG. 30 is a cross-sectional structure of the substrate to be etched immediately subsequent to step 2 according to embodiment 5;

FIG. 31 is a cross-sectional structure of the substrate to be etched immediately subsequent to step 3 according to embodiment 5;

FIG. 32 shows a time variation of the vacuum processing chamber pressure in the case of intermittent discharge;

FIG. 33 shows a time variation of the input reflecting power of microwaves in the case of intermittent discharge;

FIG. 34 shows a time variation of vacuum processing chamber pressure in the case of continuous discharge;

FIG. 35 shows a time variation of the input reflecting power of microwaves in the case of continuous discharge;

FIG. 36 shows the relationship between the vacuum processing chamber pressure and the etching rate of silicon and silicon oxide film according to the condition of step 3;

FIG. 37 shows a time variation of the total gas flow rate according to embodiment 6 of the present invention;

FIG. 38 shows a time variation of the total gas flow rate according to embodiment 6;

FIG. 39 is a time variation of the vacuum processing chamber pressure according to embodiment 6;

FIG. 40 is a cross-sectional structure of the substrate to be etched immediately subsequent to step 3 according to embodiment 6; and

FIG. 41 shows a structure of a gas supply unit according to the prior art example of patent document 1.

Claims

1. A plasma etching apparatus having a processing chamber and a gas supply unit for supplying processing gases via a plurality of steps, for etching a substrate by discharging the processing gases; the apparatus comprising: a determination unit for determining the timing for switching conditions for the plurality of steps; anda control unit for controlling flow rates and pressures of the processing gases by operating the gas supply unit based on a timing determined by the determination unit so that the processing gases supplied from the gas supply unit do not fall to or below a predetermined pressure subsequent to switching steps.

2. The plasma etching apparatus according to claim 1, further comprising: an inner antenna coil and an outer antenna coil for supplying power for generating plasma from the processing gases; whereinpower is supplied only from the outer antenna coil subsequent to switching steps.

3. The plasma etching apparatus according to claim 1, wherein the gas supply unit comprises exhaust gas lines corresponding to each of the plurality of gas supply lines, and upon switching steps, the control unit opens the exhaust gas line of the subsequent step and sets the gas flow rate to a desired value, and thereafter switches valves so as to introduce the gas having a stable flow rate to the processing chamber.

4. The plasma etching apparatus according to claim 1, wherein the control unit monitors the residual film thickness of the substrate, and based on the monitored data, predicts the timing for switching conditions.

5. The plasma etching apparatus according to claim 1, wherein the control unit sets the flow rate of gas in the exhaust gas line of the gas supply unit to a desirable value at a predetermined period of time prior to the timing for switching conditions, and thereafter, switches the valve at the timing for switching conditions so as to introduce the gas having a stable flow rate to the processing chamber.

6. The plasma etching apparatus according to claim 1, wherein when the flow rates of gases according to the conditions for the current step and the conditions for the subsequent step differ, upon starting the subsequent step, the control unit sets the gas flow rate of the gas supply unit to an intermediate value between the gas flow rate for the current step and the gas flow rate for the subsequent step and gradually reduces the gas flow rate.

7. The plasma etching apparatus according to claim 1, further comprising a second control unit for controlling pressure, and the second control unit has a control cycle set to a smaller value than the predetermined control cycle, and an increased open/close speed of a pressure controlling variable valve.

8. The plasma etching apparatus according to claim 1, further comprising a plasma generating unit for supplying RF power to the inner antenna coil and the outer antenna coil and generating inductively coupled plasma.

9. The plasma etching apparatus according to claim 1, wherein the control unit increases a total gas flow rate at the start of a step for etching and removing a bottom portion of a tapered configuration of the substrate so as to reduce the initial rise time of pressure.

10. A plasma etching apparatus for etching a substrate by generating plasma from a mixed gas, comprising: a vacuum processing chamber;a gas supply unit for supplying the mixed gas composed of a plurality of gases into the vacuum processing chamber;a first exhaust apparatus; anda variable conductance valve disposed between the first exhaust apparatus and the vacuum processing chamber for controlling the pressure in the vacuum processing chamber; whereinthe gas supply unit is designed so that each gas is supplied via respective mass flow controllers to the vacuum processing chamber, and the mass flow controllers have first valves disposed respectively between the vacuum processing chamber, gas bypath pipes branching respectively from portions between the mass flow controllers and the first valves to be connected to a second exhaust apparatus, and second valves disposed on the bypath pipes;the plasma etching apparatus further comprising a mechanism for monitoring a residual film thickness of the substrate during the etching process, and a control unit for determining based on the mechanism the timing for switching conditions of the gases and controlling the opening or closing timing of the first and second valves of the gas supply unit.

11. A plasma etching method using a plasma etching apparatus having a processing chamber and a gas supply unit for supplying processing gases via a plurality of steps, for etching a substrate by discharging the processing gases; the method comprising: determining the timing for switching conditions for the plurality of steps; andcontrolling flow rates and pressures of the processing gases by operating the gas supply unit based on a determined timing so that the processing gases supplied from the gas supply unit do not fall to or below a predetermined pressure subsequent to switching steps.

12. The plasma etching method according to claim 11, further comprising: supplying power only from an outer antenna coil out of an inner antenna coil and an outer antenna coil so as to generate plasma from the processing gases.

13. The plasma etching method according to claim 11, wherein upon switching steps in the gas supply unit having gas exhaust lines corresponding to each of the plurality of gas supply lines, the exhaust gas line of the subsequent step is opened and the gas flow rate thereof is set to a desired value, and thereafter, the valves are switched so as to introduce the gas having a stable flow rate to the processing chamber.

14. The plasma etching method according to claim 11, further comprising monitoring a residual film thickness of the substrate, andpredicting the timing for switching conditions.

15. The plasma etching method according to claim 11, further comprising setting the flow rate of gas in the exhaust gas line of the gas supply unit to a desirable value at a predetermined period of time prior to the timing for switching conditions, and thereafter, switching the valve at the timing for switching conditions so as to introduce the gas having a stable flow rate to the processing chamber.

16. The plasma etching method according to claim 11, further comprising if the flow rates of gases according to the conditions for the current step and the conditions for the subsequent step differ, setting the gas flow rate of the gas supply unit to an intermediate value between the gas flow rate for the current step and the gas flow rate for the subsequent step and gradually reducing the gas flow rate upon starting the subsequent step.

17. The plasma etching method according to claim 11, further comprising setting a control cycle of a microcomputer dedicated to controlling pressure smaller than a predetermined cycle, thereby increasing open/close speed of a pressure controlling variable valve.

18. The plasma etching method according to claim 11, further comprising supplying RF power to the inner antenna coil and the outer antenna coil and generating inductively coupled plasma.

19. The plasma etching method according to claim 11, further comprising increasing a total gas flow rate at the start of a step for etching and removing a bottom portion of a tapered configuration of the substrate so as to reduce the initial rise time of pressure.

20. A plasma etching method for etching a substrate by generating plasma from a mixed gas, using a plasma etching apparatus comprising a vacuum processing chamber, a gas supply unit for supplying the mixed gas composed of a plurality of gases into the vacuum processing chamber, a first exhaust apparatus, and a variable conductance valve disposed between the first exhaust apparatus and the vacuum processing chamber for controlling the pressure in the vacuum processing chamber; the method comprising:determining a timing for switching conditions of respective gases using a mechanism for monitoring a residual film thickness of the substrate during the etching process: andin response to the determined timing, controlling the opening and closing of first valves respectively disposed between a plurality of mass flow controllers of the gas supply unit and the vacuum processing chamber and second valves respectively disposed on a plurality of gas bypath pipes branching from a portion between the plurality of mass flow controllers and the first valves to be connected to a second exhaust apparatus.